The Optical Properties of Channel Waveguides in Batio3 Thin Films

1996 ◽  
Vol 446 ◽  
Author(s):  
B. A. Block ◽  
B. W. Wessels ◽  
D. M. Gill ◽  
C. W. Conrad ◽  
S. T. Ho
Keyword(s):  
Surface Roughness ◽  
Metalorganic Chemical Vapor Deposition ◽  
Side Wall ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Surface Scattering ◽  
Wall Roughness ◽  
Scattering Loss ◽  
Waveguide Loss ◽  
Channel Waveguides

AbstractBaTiO3 epitaxial films have been prepared on (001) MgO substrates by metalorganic chemical vapor deposition. The as‐deposited 0.2 μm thick films had a surface roughness of 12 nm. Channel waveguides were fabricated from the films and the optical throughput measured. To differentiate the surface scattering loss from the internal scattering loss, waveguides were also prepared with a surface planarization step to reduce the surface roughness to 2.5 nm. The waveguide loss was greatly reduced for the planarized waveguides. The results indicate that surface and side wall roughness accounted for the majority of the waveguide loss. Grain boundary grooving lead to surface roughness and routes to overcome this problem are discussed.

Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition

2006 ◽  
Vol 910 ◽  
Author(s):  
Charles W. Teplin ◽  
Matthew Page ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
Robert M. Ready ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Film Interface

AbstractWe grow epitaxial silicon films onto (100) silicon wafers from pure silane by hot-wire chemical vapor deposition (HWCVD). The films grow epitaxially for a thickness hepi before a Si:H cones nucleate and expand. We study the dependence of hepi on growth rate and the differences between Ta and W filaments. The surface morphology of thin but completely epitaxial films are studied in order to correlate the surface roughness during growth with the eventual epitaxial breakdown thickness. Surface roughness, strain and H at the wafer/film interface are not likely to cause the observed breakdown.

Electronic Defects in Metalorganic GaAIAs

1980 ◽  
Vol 2 ◽  
Author(s):  
N. M. Johnson ◽  
R. D. Burnham ◽  
D. Fekete ◽  
R. D. Yingling
Keyword(s):  
Vapor Deposition ◽  
Thermal Activation ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Thermal Activation Energy ◽  
Defect Level ◽  
Transient Capacitance ◽  
Electronic Defect ◽  
Electronic Defects

ABSTRACTElectronic defect levels have been measured in n-type epitaxial films of Gal - XAIXAs (0≤X≤0.33) which were grown by metalorganic chemical vapor deposition. Electron traps were characterized by transient capacitance spectroscopy on Schottky-barrier diodes. The thermal activation energy for electron emission from the near-midgap defect level is found to be larger in Ga1 - XAIXAs than the value of 0.83 eV generally observed in GaAs.

Microstructural Characterization of Platinum Films Grown by Mocvd

1995 ◽  
Vol 403 ◽  
Author(s):  
M. Vellaikal ◽  
S. K. Streiffer ◽  
R. R. Woolcott ◽  
A. I. Kingon
Keyword(s):  
Surface Roughness ◽  
Film Thickness ◽  
Side Wall ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Si Substrates ◽  
Wall Film ◽  
Conformal Coverage ◽  
Formation Resistivity ◽  
Pt Films

AbstractPlatinum thin films were deposited on SiO2/Si(100) by metalorganic chemical vapor deposition using Pt(acetylacetonate) and Pt(hexaflouroacetylacetonate) as precursors. The films were characterized in terms of orientation, surface roughness and morphology. As expected, Pt(111) was the preferred orientation. Higher substrate temperatures led to higher growth rates and increased surface roughness. The presence of oxygen during deposition decreased the minimum substrate temperature required for platinum deposition, indicating that oxygen played a role in the decomposition of these metalorganic compounds. Annealing platinum films at 550°C in an oxygen ambient resulted in hillock formation. Resistivity measurements showed that films deposited without oxygen were more resistive. Conformal coverage of platinum on patterned SiO2/Si substrates was investigated, and a side wall film thickness to top film thickness ratio of 0.6 for growth at 400°C was obtained. These Pt films produced by MOCVD displayed greater surface roughnesses than films grown by evaporation or sputtering.

Programmed substrate temperature ramping to increase nucleation density and decrease surface roughness during metalorganic chemical vapor deposition of aluminum

1999 ◽  
Vol 14 (5) ◽  
pp. 1982-1989 ◽  
Author(s):  
R. Jonnalagadda ◽  
D. Yang ◽  
B. R. Rogers ◽  
J. T. Hillman ◽  
R. F. Foster ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Texture Surface ◽  
Short Time ◽  
Metalorganic Chemical

We discuss substrate temperature ramping effects during chemical vapor deposition of aluminum on nucleation density, texture, surface roughness, and resistivity of the resulting films. Results from three different process protocols are presented. Ramping the temperature down during the deposition from 673 K resulted in a larger fraction of small nuclei compared to deposition at a constant temperature of 573 K. From among the protocols studied, the lowest surface roughness was obtained by initially depositing for a short time while ramping the temperature down from 673 K, followed by deposition at 573 K, compared to all the other films. The same process protocol resulted in the highest Al(111) texturing, highest reflectivity, and lowest resistivity.

Progression of the Surface Roughness of N+ Silicon Epitaxial Films as Analyzed by AFM

1995 ◽  
Vol 399 ◽  
Author(s):  
S. John ◽  
E. J. Quinones ◽  
B. Ferguson ◽  
K. Pacheco ◽  
C. B. Mullins ◽  
...  
Keyword(s):  
Surface Roughness ◽  
High Vacuum ◽  
Film Surface ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Ultra High Vacuum ◽  
Phosphorus Segregation ◽  
Surface Mobility ◽  
Partial Pressures ◽  
Effects Of Ph

ABSTRACTWe report on the morphology of heavily phosphorous doped silicon films grown by ultra high vacuum chemical vapor deposition at temperatures of ∼550° C. The effects of PH3 on epitaxial films have been examined for silicon deposited using SiH4 and Si2H6. It is found that films grown using silane experience an increase in surface roughness with increasing phosphine partial pressure. AFM and RHEED studies indicate 3-D growth. As epitaxy progresses, it is believed that phosphorus segregation on the growing film surface greatly diminishes the adsorption and surface mobility of the silicon bearing species. Initial Si deposition results in a pitted surface, but as growth advances and the phosphorus coverage increases, growth within the pits decreases the surface roughness. In contrast to SiH4, it is found that Si2H6 provides excellent quality, smooth films even at high PH3 partial pressures.

Sign in / Sign up

Export Citation Format

Share Document