Divacancy Annealing in Crystalline Silicon Using E-Beam and Pulsed Ruby Laser Excitation

1981 ◽  
Vol 4 ◽  
Author(s):  
H. J. Stein ◽  
J. A. Knapp ◽  
P. S. Peercy
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Electronic Excitation ◽  
Laser Excitation ◽  
Crystalline Silicon ◽  
Adequate Description ◽  
Furnace Annealing

ABSTRACTAnnealing of divacancies which were produced by 11B ion implantation was investigated under furnace, pulsed e-beam and pulsed ruby laser exposures. Despite orders of magnitude shorter exposure times for annealing and the concomitant expected high levels of electronic excitation and layer stress, we find that the thermal annealing mechanism observed for furnace annealing is an adequate description for divacancy annealing under e-beam exposure. The observed need for melting to remove divacancies by Q-switched laser annealing is also consistent with predictions based upon extrapolations from furnace annealing.

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

PN junction formation in CdTe by ion implantation and pulsed ruby laser annealing

1981 ◽  
Vol 58 (3-4) ◽  
pp. 115-117 ◽  
Author(s):  
C. B. Norris ◽  
C. I. Westmark ◽  
G. Entine ◽  
S. A. Lis ◽  
H. B. Serreze
Keyword(s):  
Ion Implantation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Pn Junction ◽  
Junction Formation

scholarly journals Formation of the IR photodetecting structures based on silicon hyperdoped with tellurium

2019 ◽  
Vol 63 (4) ◽  
pp. 430-436
Author(s):  
Fadei F. Komarov ◽  
Nikita S. Nechaev ◽  
Irina N. Parkhomenko ◽  
Gennadii D. Ivlev ◽  
Liudmila A. Vlasukova ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Absorption Coefficient ◽  
Absorption Spectra ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Photon Absorption ◽  
Laser Melting ◽  
Furnace Annealing ◽  
Impurity Atoms

The Si layers doped with Te up to the concentrations of (3–5)1020 cm–3 have been formed via ion implantation and pulsed laser melting. It is found, 70–90 % of the embedded impurity atoms are in substitution states in the silicon lattice. These layers have revealed significant absorption (35–66 %) in the wavelength λ range of 1100–2500 nm. In this case, the absorption coefficient increases with the λ growth. The absorption spectra of the implanted layers after pulsed laser melting, equilibrium furnace annealing, and rapid thermal annealing have been compared. It is shown that equilibrium furnace annealing increases the photon absorption by 4 % in the wavelength range of 1100–2500 nm in comparison with virgin Si. After rapid thermal annealing, the photon absorption in the IR-range increases only by 2 %.

A comparison between the furnace annealing and ruby laser annealing of Yb ion implants in CdTe

1987 ◽  
Vol 102 (1-4) ◽  
pp. 39-52
Author(s):  
D. Wood ◽  
D. Shaw ◽  
F. J. Bryant
Keyword(s):  
Ruby Laser ◽  
Laser Annealing ◽  
Furnace Annealing

Study of Titanium and Nickel Silicide Formation By Q-Switched Laser and Multiscanning E-Beam

1981 ◽  
Vol 4 ◽  
Author(s):  
G.G. Bentini ◽  
R. Nipoti ◽  
M. Berti ◽  
A.V. Drigo ◽  
C. Cohen
Keyword(s):  
Ruby Laser ◽  
Laser Annealing ◽  
Volume Diffusion ◽  
Metal Layer ◽  
Diffusion Mechanism ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Furnace Annealing ◽  
Post Annealing ◽  
Sharp Interfaces

ABSTRACTThe use of Q-switched ruby laser and multiscanning electron beam annealing (MEBA) to produce the reaction of thin Ti and Ni films deposited onto single crystal Si has been studied. Laser annealing produces a reaction at the interface between the metal and the semiconductor; the reacted layers are not uniform in composition and more similar to a mixture than to a well-defined phase. The silicide layers produced by MEBA results from the solid state reaction of whole metal layer and have well-defined compositions and sharp interfaces between phases and the underlying crystal. The observed thicknesses of the silicides produced by MEBA cannot be accounted for by the parabolic volume diffusion mechanism operating in the standard furnace annealing. Post annealing treatments in furnace showed that e-beam produced silicides have the same thermal stability as those produced by conventional heat treatments. The presence of a critical temperature for silicide formation in Ti/Si MEBA annealed samples has been confirmed and studied in detail.

A Channeling Study of Defect-Boron Complexes in Si

1980 ◽  
Vol 2 ◽  
Author(s):  
M.L. Swanson ◽  
L.M. Howe ◽  
F.W. Saris ◽  
A.F. Quenneville
Keyword(s):  
Ion Implantation ◽  
Nuclear Reaction ◽  
Incident Energy ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Surface Region ◽  
Alpha Particles ◽  
Near Surface ◽  
Annealing Temperatures ◽  
Boron Complexes

ABSTRACTSi crystals were doped with 0.1–0.2 at% 11B in the near surface region by ion implantation followed by thermal diffusion at 1373 K or by ruby laser annealing. The position of the B atoms in the Si lattice was determined by channeling measurements, utilizing both the yield of H+ ions (of incident energy 0.7 MeV) backscattered from Si atoms and the yield of alpha particles from the 11B(p,α)8Be nuclear reaction. Initially, 95–99% of the B atoms were substitutional. Irradiation at 35 K or 293 K with 0.7 MeV H+ displaced B atoms from lattice sites. The displacement rate was greater at 293 K than at 35 K, and was greater for diffused samples than for laser annealed samples. Following 35 K irradiations, a large increase in the fraction fdB of displaced B atoms occurred during annealing near 240 K. At higher annealing temperatures, fdB decreased over a broad temperature range from 425–825 K. Angular scans through <110> channels for the laser annealed samples after 293 K irradiation or after 35 K irradiation plus 293 K annealing showed a pronounced narrowing of the dip in 11B(p,α)8Be yields compared with the dip in yields from Si, whereas no narrowing was observed for <100> channels. These results indicate that B atoms were displaced into specific lattice sites by the migration of an interstitial B defect (the EPR G28 defect) near 240 K.

Deep Level Spectra of Ion-Implantation Defects and Slip Dislocations Introduced by CO2 Laser

1985 ◽  
Vol 52 ◽  
Author(s):  
X. M. Bao ◽  
X. Y. Zhang ◽  
C. E. Liu ◽  
X. Q. Zheng
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Laser Annealing ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Dislocation Core ◽  
Energy Spectra ◽  
High Power Density ◽  
Subsequent Thermal Annealing ◽  
Plasma Annealing

ABSTRACTThe CW CO2 laser annealing is an effective method for removing deep level defects induced by ion-implantation. The available laser density range is 350˜600 W/cm2, which is consistent with that needed to fully activate implanted impurities. At high power density (>600W/cm2 ) slip dislocations can be induced. The energy spectra of dislocations were measured with DLTS technique. One peak at Ev + 0.33eV in p-Si and two at peaks at Ec −0.37eV and Ec −0.50eV in n-Si have been found. These peaks are stable during thermal annealing at high temperature. But they can be passivated with hydrogen plasma annealing and reactivated by subsequent thermal annealing in vacuum. The dislocation core is reconstructed.

Silicon Melts During Pulsed Ruby Laser Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
B Stritzker ◽  
A Pospieszczyk ◽  
J. A. Tagle
Keyword(s):  
Velocity Distribution ◽  
Thermal Annealing ◽  
Equilibrium Model ◽  
Thermal Equilibrium ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Type Distribution ◽  
Spot Diameter ◽  
Hot Surface ◽  
Time Of Flight Method

ABSTRACTThe lattice temperature of silicon was measured during pulsed ruby laser annealing (-20 ns pulse, spot diameter ≥ 5 mm) using a classical time of flight method to determine the velocity distribution of Si atoms evaporated from the hot surface. The maximum of this Maxwell type distribution was used to calculate the temperature of the Si surface. The resulting lattice temperatures vary between 1200 and 2500 K for energy densities between 1.0 and 2.0 J/cm2 , i.e., Si is molten for energy densities ≥ 1.4 J/cm2 . This result clearly supports the strictly thermal annealing model [1] and contradicts the non-thermal-equilibrium model [2] as well as Raman measurements [3].

Sign in / Sign up

Export Citation Format

Share Document