Study of Titanium and Nickel Silicide Formation By Q-Switched Laser and Multiscanning E-Beam

1981 ◽  
Vol 4 ◽  
Author(s):  
G.G. Bentini ◽  
R. Nipoti ◽  
M. Berti ◽  
A.V. Drigo ◽  
C. Cohen
Keyword(s):  
Ruby Laser ◽  
Laser Annealing ◽  
Volume Diffusion ◽  
Metal Layer ◽  
Diffusion Mechanism ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Furnace Annealing ◽  
Post Annealing ◽  
Sharp Interfaces

ABSTRACTThe use of Q-switched ruby laser and multiscanning electron beam annealing (MEBA) to produce the reaction of thin Ti and Ni films deposited onto single crystal Si has been studied. Laser annealing produces a reaction at the interface between the metal and the semiconductor; the reacted layers are not uniform in composition and more similar to a mixture than to a well-defined phase. The silicide layers produced by MEBA results from the solid state reaction of whole metal layer and have well-defined compositions and sharp interfaces between phases and the underlying crystal. The observed thicknesses of the silicides produced by MEBA cannot be accounted for by the parabolic volume diffusion mechanism operating in the standard furnace annealing. Post annealing treatments in furnace showed that e-beam produced silicides have the same thermal stability as those produced by conventional heat treatments. The presence of a critical temperature for silicide formation in Ti/Si MEBA annealed samples has been confirmed and studied in detail.

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

The effect of pulsed laser annealing on the nickel silicide formation

2010 ◽  
Vol 87 (12) ◽  
pp. 2540-2543 ◽  
Author(s):  
Hou-Yu Chen ◽  
Chia-Yi Lin ◽  
Chien-Chao Huang ◽  
Chao-Hsin Chien
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Pulsed Laser Annealing

Nickel Silicide Formation using Pulsed Laser Annealing for nMOSFET Performance Improvement

2011 ◽  
Vol 158 (8) ◽  
pp. H840 ◽  
Author(s):  
Hou-Yu Chen ◽  
Chia-Yi Lin ◽  
Min-Cheng Chen ◽  
Chien-Chao Huang ◽  
Chao-Hsin Chien
Keyword(s):  
Performance Improvement ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Pulsed Laser Annealing

A comparison between the furnace annealing and ruby laser annealing of Yb ion implants in CdTe

1987 ◽  
Vol 102 (1-4) ◽  
pp. 39-52
Author(s):  
D. Wood ◽  
D. Shaw ◽  
F. J. Bryant
Keyword(s):  
Ruby Laser ◽  
Laser Annealing ◽  
Furnace Annealing

scholarly journals Nickel Silicide Formation Using Excimer Laser Annealing

2012 ◽  
Vol 27 ◽  
pp. 503-509 ◽  
Author(s):  
L. Tous ◽  
J-F Lerat ◽  
T. Emeraud ◽  
R. Negru ◽  
K. Huet ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Excimer Laser Annealing

Silicide formation by pulsed-incoherent-light annealing

1985 ◽  
Vol 63 (6) ◽  
pp. 876-880 ◽  
Author(s):  
P. K. John ◽  
S. Gecim ◽  
Y. Suda ◽  
B. Y. Tong ◽  
S. K. Wong
Keyword(s):  
Laser Annealing ◽  
Incident Light ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Incoherent Light ◽  
Rutherford Back Scattering ◽  
Annealing Conditions ◽  
Scanning Auger Microprobe ◽  
Back Scattering ◽  
Mixed Layers

Nickel silicide formation is studied using a pulsed incoherent light source of variable duration in the range 5-50 μs. The potential advantages of the arc source over other pulsed techniques such as electron (e)-beam and laser annealing are simplicity, higher electrical-conversion efficiency, and larger area processing. The plasma arc provided incident light energy density in the range 5–45 J/cm2, and our results indicate that mixed layers of nickel and silicon can be produced using this source at about 45 J/cm2. It was found that a thin layer of amorphous silicon on the nickel enhanced light absorption and mixing. Rutherford back scattering and scanning Auger microprobe techniques were used to characterize the mixed layers. The incoherent light annealing is believed to be a rapid thermal process, which in our case results either in solid- or liquid-phase epitaxial regrowth depending on the annealing conditions.

Divacancy Annealing in Crystalline Silicon Using E-Beam and Pulsed Ruby Laser Excitation

1981 ◽  
Vol 4 ◽  
Author(s):  
H. J. Stein ◽  
J. A. Knapp ◽  
P. S. Peercy
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Electronic Excitation ◽  
Laser Excitation ◽  
Crystalline Silicon ◽  
Adequate Description ◽  
Furnace Annealing

ABSTRACTAnnealing of divacancies which were produced by 11B ion implantation was investigated under furnace, pulsed e-beam and pulsed ruby laser exposures. Despite orders of magnitude shorter exposure times for annealing and the concomitant expected high levels of electronic excitation and layer stress, we find that the thermal annealing mechanism observed for furnace annealing is an adequate description for divacancy annealing under e-beam exposure. The observed need for melting to remove divacancies by Q-switched laser annealing is also consistent with predictions based upon extrapolations from furnace annealing.

scholarly journals Nickel silicide formation using multiple-pulsed laser annealing

2007 ◽  
Vol 101 (3) ◽  
pp. 034307 ◽  
Author(s):  
Y. Setiawan ◽  
P. S. Lee ◽  
K. L. Pey ◽  
X. C. Wang ◽  
G. C. Lim ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Pulsed Laser Annealing
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