Silicon Melts During Pulsed Ruby Laser Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
B Stritzker ◽  
A Pospieszczyk ◽  
J. A. Tagle
Keyword(s):  
Velocity Distribution ◽  
Thermal Annealing ◽  
Equilibrium Model ◽  
Thermal Equilibrium ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Type Distribution ◽  
Spot Diameter ◽  
Hot Surface ◽  
Time Of Flight Method

ABSTRACTThe lattice temperature of silicon was measured during pulsed ruby laser annealing (-20 ns pulse, spot diameter ≥ 5 mm) using a classical time of flight method to determine the velocity distribution of Si atoms evaporated from the hot surface. The maximum of this Maxwell type distribution was used to calculate the temperature of the Si surface. The resulting lattice temperatures vary between 1200 and 2500 K for energy densities between 1.0 and 2.0 J/cm2 , i.e., Si is molten for energy densities ≥ 1.4 J/cm2 . This result clearly supports the strictly thermal annealing model [1] and contradicts the non-thermal-equilibrium model [2] as well as Raman measurements [3].

Lattice Temperature of GaAs and Si During Nanosecond Laser Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Pospieszczyk ◽  
M. Abdel Harith ◽  
B. Stritzker
Keyword(s):  
Laser Pulse ◽  
Velocity Distribution ◽  
Single Crystals ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Density Variation ◽  
Nanosecond Laser ◽  
Time Resolved ◽  
Flight Measurement ◽  
Molten Phase

ABSTRACTSingle crystals of GaAs (100) and Si (110) were laser annealed with a 20 ns ruby laser pulse. Both the velocity distribution and the density variation of evaporated Ga or As and Si atoms were determined by a time-of-flight measurement. In addition time-resolved measurements were made of the reflectivity of the surface during the laser annealing. The data consistently show that the molten phase occurs at energy densities of ≳ 0.35 J cm–2 for GaAs and ≳O.8 J cm for Si.

Divacancy Annealing in Crystalline Silicon Using E-Beam and Pulsed Ruby Laser Excitation

1981 ◽  
Vol 4 ◽  
Author(s):  
H. J. Stein ◽  
J. A. Knapp ◽  
P. S. Peercy
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Electronic Excitation ◽  
Laser Excitation ◽  
Crystalline Silicon ◽  
Adequate Description ◽  
Furnace Annealing

ABSTRACTAnnealing of divacancies which were produced by 11B ion implantation was investigated under furnace, pulsed e-beam and pulsed ruby laser exposures. Despite orders of magnitude shorter exposure times for annealing and the concomitant expected high levels of electronic excitation and layer stress, we find that the thermal annealing mechanism observed for furnace annealing is an adequate description for divacancy annealing under e-beam exposure. The observed need for melting to remove divacancies by Q-switched laser annealing is also consistent with predictions based upon extrapolations from furnace annealing.

Pulsed Laser Annealing of R.F.Sputtered Amorphous Si : H.Films, Doped with Arsenic

1981 ◽  
Vol 4 ◽  
Author(s):  
E. Fogarassy ◽  
R. Stuck ◽  
M. Toulemonde ◽  
P. Siffert ◽  
J.F. Morhange ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Amorphous Layer ◽  
High Concentration ◽  
Topographic Analysis ◽  
Pulsed Laser Annealing ◽  
Residual Hydrogen ◽  
Silicon Target ◽  
Amorphous Si

Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by R.F.cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched Ruby laser. Topographic analysis of the irradiated layers has shown the formation of a crater, due to an evaporation effect of material which could be related to the presence of a high concentration of Ar in the amorphous layer. RBS and Raman Spectroscopy showed that the remaining layer is not recrystallised probably due to inhibition by the residual hydrogen. However, it was found that arsenic diffuses into the monocrystalline substrate by laser induced diffusion of dopant from the surface solid source, leading to the formation of good quality P-N junctions.

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Measurements of Velocity Distribution in Potassium Molecular Beams by Time-of-Flight Method

1971 ◽  
Vol 10 (5) ◽  
pp. 543-550 ◽  
Author(s):  
Kumasaburo Kodera ◽  
Isao Kusunoki ◽  
Kunihiko Horinouchi ◽  
Kimio Isa ◽  
Masahiro Yoshihara
Keyword(s):  
Velocity Distribution ◽  
Time Of Flight ◽  
Molecular Beams ◽  
Time Of Flight Method

Pulsed Laser Annealing of Aluminum

1980 ◽  
Vol 1 ◽  
Author(s):  
W. R. Wampler ◽  
D. M. Follstaedt ◽  
P. S. Peercy
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Reasonable Agreement ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Nucleation Time ◽  
Pulsed Laser Annealing ◽  
Beam Analysis

ABSTRACTPulsed ruby laser irradiation of unimplanted single crystal and implanted polycrystalline Al has been studied with ion beam analysis and TEM. The results show that Al is melted to a depth of ∼ 0.9 μm with a 4.2 J/cm2 , 15 nsec pulse, and that vacancies are quenched into Al during resolidification. Diffusion of Zn in liquid Al is observed, and a melt time of ∼ 65 nsec is estimated for a 3.8 J/cm2, 30 nsec pulse. The observations are in reasonable agreement with calculations of sample temperature and melt times. We observe no precipitation of AlSb in liquid Al for Sbimplanted Al, and conclude that the nucleation time satisfies 50 nsec ≲ tnuc ≲ 200 nsec. We find no evidence for amorphous Al after irradiation of single crystal Al with energies ≳ 1.5 J/cm2.

Electrical/Optical Properties of Thin Transparent Oxide Films Deposited Using DC Magnetron Sputtering

2004 ◽  
Vol 449-452 ◽  
pp. 989-992
Author(s):  
Byung Soo So ◽  
Sung Moon Kim ◽  
Young Sin Pyo ◽  
Young Hwan Kim ◽  
Jin-Ha Hwang
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Excimer Laser ◽  
Indium Tin Oxide ◽  
Laser Annealing ◽  
Dc Magnetron Sputtering ◽  
Excimer Laser Annealing ◽  
Plastic Substrates ◽  
Ito Thin Films

Amorphous indium tin oxide (ITO) thin films were grown on plastic substrates, PES (polyethersulfone) using low temperature DC magnetron sputtering. Various post-annealing techniques are attempted to optimize conductivity, transmittance, and roughness: i) conventional thermal annealing, ii) excimer laser annealing, and iii) UV irradiation. The electrical/optical properties were measured using Hall-measurement, DC 4-point resistance measurement, and UV spectrometry along with micro-structural characterization. Optimized UV treatment exhibits enhanced conductivity and smooth surface, compared to those of conventional thermal annealing and excimer laser annealing.

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