Quantum Well Intermixing for Optoelectronic Applications

1997 ◽  
Vol 484 ◽  
Author(s):  
C. Jagadish ◽  
H. H. Tan ◽  
S. Yuan ◽  
M. Gal
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Anodic Oxide ◽  
Threshold Current ◽  
Quantum Well Intermixing ◽  
Quantum Well Structures ◽  
Proton Implantation ◽  
High Doses ◽  
Proton Dose ◽  
Low Temperature Photoluminescence

AbstractIon implantation induced intermixing of GaAs-AlGaAs quantum well structures with H, O and As ions is investigated by low temperature photoluminescence. Large energy shifts are observed in all the cases, though recovery of photoluminescence intensities in proton case is more significant than others. Energy shifts are linear with proton dose and no saturation was observed even up to a dose of ∼ 5 × 1016 cm−2. Saturation in energy shifts are seen for both As and 0 ions at high doses. Energy shifts are also found to be dependent on Al composition of the barriers. Wavelength shifted quantum well lasers are fabricated with energy shifts of about 5 nm with no changes in threshold current using proton implantation. Anodic oxide induced intermixing of GaAs-AlGaAs quantum wells is demonstrated.

Irradiation-Induced Damage and Intermixing of GaAs-Algaas Quantum Wells

1995 ◽  
Vol 396 ◽  
Author(s):  
H.H. Tan ◽  
J.S. Williams ◽  
C. Jagadish ◽  
P.T. Burke ◽  
M. Gal
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Quantum Wells ◽  
Ion Irradiation ◽  
Large Energy ◽  
Good Recovery ◽  
Quantum Well Structures ◽  
Delicate Balance ◽  
Higher Doses ◽  
Low Temperature Photoluminescence

AbstractA comparison of ion irradiation-induced intermixing in GaAs-Al0.54Gao46As quantum well structures with H, O and As ions is investigated by low temperature photoluminescence. Very large energy shifts are observed together with good recovery of the photoluminescence intensities after annealing in samples irradiated with protons. No saturation in the energy shifts is observed in samples irradiated even up to a dose of 4.3 x 1016 cm-2. Similar large shifts with low absorption are also observed in O and As implanted samples but at a significantly lower ion dose. However, both the heavier ions show a saturation effect in the degree of intermixng at higher doses. The degree of intermixing is believed to be a delicate balance among multiple competing processes that occurs across the interface.

Theoretical Performance of MID-IR Broken-Gap Superlattice Quantum Well Lasers

1996 ◽  
Vol 450 ◽  
Author(s):  
Michael E. Flatté ◽  
C. H. Grein ◽  
J. T. Olesberg ◽  
T. F. Boggess
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Type Ii Superlattice ◽  
Superlattice Structure ◽  
Current Densities ◽  
Semi Empirical ◽  
Broken Gap ◽  
The Ideal

ABSTRACTWe will present calculations of the ideal performance of mid-infrared InAs/InGaSb superlattice quantum well lasers. For these systems several periods of an InAs/InGaSb type-II superlattice are grown in quantum wells. Calculations of the non-radiative and radiative lifetimes of the carriers utilize the full non-parabolic band structure and momentum-dependent matrix elements calculated from a semi-empirical multilayer K · P theory. From these lifetimes, threshold current densities have been evaluated for laser structures. We find serious problems with the hole and electron confinement in the superlattice quantum wells grown to date, and propose a four-layer superlattice structure which corrects these problems.

Photoluminescence Fatigue in Laterally-Ordered (GaP)2/(InP)2 Short-Period-Superlattices (SPS) Grown by Molecular Beam Epitaxy

1993 ◽  
Vol 325 ◽  
Author(s):  
X. C. Liu ◽  
S. Q. Gu ◽  
E. E. Reuter ◽  
S. G. Bishop ◽  
A. C. Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Lower Energy ◽  
Molecular Beam ◽  
Continuous Illumination ◽  
Exciting Light ◽  
Quantum Well Structures ◽  
Short Period ◽  
Short Period Superlattices

AbstractSpontaneously laterally ordered (GaP)2/(InP)2 short period superlattices (SPS) grown by Molecular Beam Epitaxy (MBE) on nominal (100) GaAs substrates have been studied by photoluminescence (PL) spectroscopy. The samples studied included SPS comprising 110 pairs of (GaP)2/(InP)2 (total thickness σ90 nm) and multiquantum well structures in which quantum wells comprising 12 pairs of (GaP)2/(InP)2 SPS layers (thickness σ10 nm) are alternated with lattice-matched GaInP random alloy barrier layers. The 5K PL spectra include a σ1760 meV nearband edge band, and a much broader, lower energy (σ1670 meV) luminescence band that exhibits an unusual fatiguing behavior; its intensity diminishes monotonically during continuous illumination by the exciting light. This fatigued PL state is metastable at low temperatures. In the quantum well structure, although the relative intensity of the lower energy band is significantly weaker in comparison to the higher one, the fatiguing behavior still exists. However the fatiguing rate is slower in quantum well structures than that observed in the thick SPS film.

A THEORETICAL AND EXPERIMENTAL STUDY OF ELECTRONIC CONFINEMENT, COUPLING, AND TRANSLAYER INTERACTION IN NOBLE-METAL QUANTUM-WELL STRUCTURES

1994 ◽  
Vol 08 (18) ◽  
pp. 1075-1096 ◽  
Author(s):  
W. E. MCMAHON ◽  
T. MILLER ◽  
T.-C. CHIANG
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Noble Metal ◽  
Experimental Studies ◽  
Surface States ◽  
Double Quantum ◽  
Multilayer Systems ◽  
Quantum Well Structures ◽  
Double Quantum Well ◽  
Bloch Electrons

Noble-metal multilayer systems have been grown and examined with angle-resolved photoemission. Surface states, and single and double quantum wells have been studied experimentally; the results can be explained with a simple theoretical model based upon Bloch electrons. In this paper, we will present our model and then give a description of some experimental studies which utilize the model. In particular, we will consider double-quantum-well systems which can be used to examine basic aspects of electronic confinement, layer–layer coupling, and translayer interaction through a barrier.

Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

AES and EELFS Studies of Initial Stages of Growth of GaAs/InAs/GaAs Heterostructures.

1988 ◽  
Vol 144 ◽  
Author(s):  
F. D. Schowengerdt ◽  
F. J. Grunthaner ◽  
John K. Liu
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Growth Parameters ◽  
High Energy ◽  
Model Calculations ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
Stages Of Growth ◽  
Double Heterostructures ◽  
Composition And Structure

ABSTRACTWe report on a systematic study of the composition and structure of GaAs/InAs/GaAs quantum wells using Auger Electron Spectroscopy (AES), Extended Energy Loss Fine Structure (EELFS), and Reflection High Energy Electron Diffraction (RHEED) techniques. Double heterostructures with InAs thickness ranging from 2 to 10 monolayers, capped by 2 to 10 monolayers of GaAs, were grown by MBE using a variety of techniques, including those employing sequential, interrupted, and delayed shutter timing sequences. AES peak ratios are compared with model calculations to monitor compositional development of the multilayers. The AES results are correlated with RHEED measurements to determine MBE growth parameters for optimal control of the stoichiometry and surface morphology. EELFS was used to monitor strain in the buried InAs layers. The AES results show departure from smooth laminar growth of layers of stoichiometric InAs on GaAs at temperatures below 420 C and above 470 C. AES results on the quantum well structures suggest floating InAs layers on top of the GaAs and/or facet formation in the GaAs layers. The EELFS results, when compared to bulk InAs, indicate the presence of strain in the buried InAs quantum well.

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