Synthesis of Thin Membranes in Si Technology by Carbon Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
C. Serre ◽  
A. Pérez-rodríguez ◽  
L. Calvo-Barrio ◽  
A. Romano-RodríGuez ◽  
J.R. Morante ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
High Dose ◽  
Carbon Ion ◽  
Annealing Conditions ◽  
Thin Membranes ◽  
Etch Stop ◽  
Buried Layer ◽  
Buried Layers ◽  
Ultrathin Membranes

AbstractThe use of high dose carbon ion implantation in Si for the production of ultrathin membranes is investigated. Carbon implantations with doses up to 1018 cm-8 and energies up to 300 keV, at room temperature and 500°C were used, followed by 10 hours annealing at 1150°C. Structural and chemical analysis has been performed (including TEM, XPS, Raman and IR spectroscopies), and the etch properties have been investigated for KOH and TMAH etchants. It is found that doses higher than 1017 cm-2 are needed to obtain efficient etch-stop layers in TMAH, independently of the annealing conditions, while in contrast with previous work, it was not possible to obtain satisfactory results using KOH. According to this, ultrathin crystalline membranes (below 500 nm thick) with average surface roughness as low as 4.8 nm, measured by AFM, were obtained, and the structural analysis revealed the formation of a highly stable buried layer of crystalline β-SiC precipitates aligned with the Si matrix. These results corroborate the ability of high dose C ion implantation to obtain buried layers usable for micomachining applications.

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

Carbon onions formation by high-dose carbon ion implantation into copper and silver

2000 ◽  
Vol 128-129 ◽  
pp. 43-50 ◽  
Author(s):  
T Cabioc’h ◽  
M Jaouen ◽  
E Thune ◽  
P Guérin ◽  
C Fayoux ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Dose ◽  
Carbon Ion ◽  
Carbon Onions

Detailed analysis of β-SiC formation by high dose carbon ion implantation in silicon

1996 ◽  
pp. 282-285
Author(s):  
A. Romano-Rodriguez ◽  
C. Serre ◽  
L. Calvo-Barrio ◽  
A. Pérez-Rodriguez ◽  
J.R. Morante ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Detailed Analysis ◽  
High Dose ◽  
Carbon Ion

Fabrication of High Quality Silicide Layers by Ion Implantation

1989 ◽  
Vol 147 ◽  
Author(s):  
Karen J Reeson ◽  
Ann De Veirman ◽  
Russell Gwilliam ◽  
Chris Jeynes ◽  
Brian J Sealy ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal Silicon ◽  
High Quality ◽  
Crystal Silicon ◽  
The Matrix ◽  
Buried Layer ◽  
Buried Layers ◽  
C 30 ◽  
Type Lattice ◽  
Anneal Temperature

AbstractBuried layers of CoSi2 have been successfully fabricated in (100) single crystal silicon by implanting 350 keV Co+ to doses in the range 2 - 7 × 1017 cm−2 at a temperature of ∼550°C. For doses ≥ 4 × 101759Co+ cm−2, a continuous buried layer of CoSi2 grows epitaxially, during implantation. After annealing (1000°C 30 minutes) continuous layers of stoichiometric CoSi2 which are coherent with the matrix are produced for doses ≥ 4 × 101759Co+ cm−2. For doses of ≤ 2 × 101759Co+, cm−2, discrete octahedral precipitates of monocrystalline CoSi2 are observed. Isochronal annealing (for 5s) at temperatures in the range 800–1200°C, shows that at temperatures ≥ 900°C there is significant redistribution of the Co from B-type or interstitial sites → substitutional A-type lattice sites. As the anneal temperature is increased there is a corresponding improvement in the crystallinity and coherency of the Si and CoSi2 lattices. This shows that at a given temperature much of the Co redistribution takes place within the first 5s of the anneal.

Formation of Buried Tisi2 Layers in Single Crystal Silicon by Ion Implantion

1987 ◽  
Vol 107 ◽  
Author(s):  
P. Madakson ◽  
G.J. Clark ◽  
F.K. Legoues ◽  
F.M. d'Heurle ◽  
J.E.E. Baglin
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Buried Layers

Buried TiSi2 layers, about 600Å thick and 900Å below the surface, were formed in < 111> silicon by ion implantation. The implantation was done with either 120 or 170 keV Ti+ to doses ranging from 5 x 1016 to 2 x 1017 ions/cm2, and at temperatures of between ambient and 650° C. Annealing was done at 600° C, 700°C and 1000°C. Continuous buried layers were achieved only with samples implanted with doses equal or greater than 1017 ions/cm2 and at temperatures above 450°C. Below this dose TiSi2, was present only as discrete precipitates. For room temperature implants, the TiSi2, layer is formed on the surface. The damage present consists of dispersed TiSi6 precipitates and microtwins.

keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
J.K.N. Lindner ◽  
A. Frohnwieser ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Ion Implantation ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Ion Beam ◽  
High Dose ◽  
Layer Formation ◽  
Substrate Orientation ◽  
Ion Beam Synthesis ◽  
Buried Layers ◽  
Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

Room-temperature continuous wave laser oscillations in Nd:YAG ceramic waveguides produced by carbon ion implantation

2010 ◽  
Vol 103 (4) ◽  
pp. 837-840 ◽  
Author(s):  
Y. Tan ◽  
C. Zhang ◽  
F. Chen ◽  
F.-Q. Liu ◽  
D. Jaque ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Continuous Wave ◽  
Continuous Wave Laser ◽  
Carbon Ion ◽  
Wave Laser

High-dose carbon ion implantation studies in silicon

1988 ◽  
Vol 163 ◽  
pp. 323-329 ◽  
Author(s):  
K. Srikanth ◽  
M. Chu ◽  
S. Ashok ◽  
N. Nguyen ◽  
K. Vedam
Keyword(s):  
Ion Implantation ◽  
High Dose ◽  
Carbon Ion

Etch‐Stop Behavior of Buried Layers Formed by Substoichiometric Nitrogen Ion Implantation into Silicon

1996 ◽  
Vol 143 (3) ◽  
pp. 1026-1033 ◽  
Author(s):  
A. Pérez‐Rodríguez ◽  
A. Romano‐Rodríguez ◽  
J. R. Morante ◽  
M. C. Acero ◽  
J. Esteve ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Nitrogen Ion Implantation ◽  
Etch Stop ◽  
Buried Layers ◽  
Nitrogen Ion
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