C,H,N and O in Si and Characterization and Simulation of Materials and Processes
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123

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Published By Elsevier

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Author Index of Volume 37

C,H,N and O in Si and Characterization and Simulation of Materials and Processes ◽

10.1016/b978-0-444-82413-4.50122-0 ◽

1996 ◽

pp. 251-252

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Ordering tendencies in Fe–Al alloys in magnetic and non-magnetic models

C,H,N and O in Si and Characterization and Simulation of Materials and Processes ◽

10.1016/b978-0-444-82413-4.50117-7 ◽

1996 ◽

pp. 237-241

Author(s):

S.K. Bose ◽

J. Kudrnovský ◽

V. Drchal ◽

O. Jepsen ◽

O.K. Andersen

Keyword(s):

Al Alloys

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Quantum chemical simulations of the optical properties and diffusion of electron centres in MgO crystals

C,H,N and O in Si and Characterization and Simulation of Materials and Processes ◽

10.1016/b978-0-444-82413-4.50111-6 ◽

1996 ◽

pp. 212-214 ◽

Cited By ~ 1

Author(s):

E.A. Kotomin ◽

M.M. Kuklja ◽

R.I. Eglitis ◽

A.I. Popov

Keyword(s):

Optical Properties ◽

Quantum Chemical ◽

And Diffusion

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Post-growth diffusion of Be doped InGaAs epitaxial layers: experimental and simulated distributions

C,H,N and O in Si and Characterization and Simulation of Materials and Processes ◽

10.1016/b978-0-444-82413-4.50110-4 ◽

1996 ◽

pp. 208-211

Author(s):

S. Koumetz ◽

J. Marcon ◽

K. Ketata ◽

M. Ketata ◽

F. Lefebvre ◽

...

Keyword(s):

Epitaxial Layers ◽

Growth Diffusion

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Molecular dynamics study for diffusion process in amorphous and supercooled liquid Zr67Ni33 alloys

C,H,N and O in Si and Characterization and Simulation of Materials and Processes ◽

10.1016/b978-0-444-82413-4.50108-6 ◽

1996 ◽

pp. 201-204

Author(s):

Tomoyasu Aihara ◽

Yoshiyuki Kawazoe ◽

Tsuyoshi Masumoto

Keyword(s):

Molecular Dynamics ◽

Diffusion Process ◽

Supercooled Liquid

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Tight-binding and local density approximation studies of semiconductor surfaces and small organic adsorbates

C,H,N and O in Si and Characterization and Simulation of Materials and Processes ◽

10.1016/b978-0-444-82413-4.50096-2 ◽

1996 ◽

pp. 150-154

Author(s):

C.M. Goringe ◽

A.P. Sutton

Keyword(s):

Local Density Approximation ◽

Local Density ◽

Tight Binding ◽

Semiconductor Surfaces ◽

Density Approximation ◽

Organic Adsorbates

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From atomic parameters to anisotropic etching diagrams

C,H,N and O in Si and Characterization and Simulation of Materials and Processes ◽

10.1016/b978-0-444-82413-4.50095-0 ◽

1996 ◽

pp. 146-149

Author(s):

N. Moldovan ◽

Mihaela Ilie

Keyword(s):

Anisotropic Etching ◽

Atomic Parameters

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Diffusion constant of Ga, In and As adatoms on GaAs (001) surface: molecular dynamics calculations

C,H,N and O in Si and Characterization and Simulation of Materials and Processes ◽

10.1016/b978-0-444-82413-4.50092-5 ◽

1996 ◽

pp. 135-138

Author(s):

A. Palma ◽

E. Semprini ◽

A. Talamo ◽

N. Tomassini

Keyword(s):

Molecular Dynamics ◽

Diffusion Constant ◽

Molecular Dynamics Calculations

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The tight-binding Ising model for surface segregation in binary alloys: formalism and applications

C,H,N and O in Si and Characterization and Simulation of Materials and Processes ◽

10.1016/b978-0-444-82413-4.50090-1 ◽

1996 ◽

pp. 127-130

Author(s):

S. Ouannasser ◽

H. Dreyssé ◽

L.T. Wille

Keyword(s):

Ising Model ◽

Surface Segregation ◽

Binary Alloys ◽

Tight Binding

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Grain boundary sliding: an ab initio simulation

C,H,N and O in Si and Characterization and Simulation of Materials and Processes ◽

10.1016/b978-0-444-82413-4.50089-5 ◽

1996 ◽

pp. 121-126

Author(s):

C. Molteni ◽

G.P. Francis ◽

M.C. Payne ◽

V. Heine

Keyword(s):

Grain Boundary ◽

Ab Initio ◽

Grain Boundary Sliding ◽

Ab Initio Simulation ◽

Boundary Sliding

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C,H,N and O in Si and Characterization and Simulation of Materials and ProcessesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Elsevier

Author Index of Volume 37

Ordering tendencies in Fe–Al alloys in magnetic and non-magnetic models

Quantum chemical simulations of the optical properties and diffusion of electron centres in MgO crystals

Post-growth diffusion of Be doped InGaAs epitaxial layers: experimental and simulated distributions

Molecular dynamics study for diffusion process in amorphous and supercooled liquid Zr67Ni33 alloys

Tight-binding and local density approximation studies of semiconductor surfaces and small organic adsorbates

From atomic parameters to anisotropic etching diagrams

Diffusion constant of Ga, In and As adatoms on GaAs (001) surface: molecular dynamics calculations

The tight-binding Ising model for surface segregation in binary alloys: formalism and applications

Grain boundary sliding: an ab initio simulation

C,H,N and O in Si and Characterization and Simulation of Materials and Processes
Latest Publications