The Role of Heavy Hydrocarbons in Cvd Diamond Growth

1992 ◽  
Vol 270 ◽  
Author(s):  
Ching-Hsong Wu ◽  
T. J. Potter ◽  
M. A. Tamor
Keyword(s):  
Growth Rate ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Spectrometric Analysis ◽  
Heavy Hydrocarbons ◽  
Hot Filament Cvd ◽  
Hot Filament ◽  
Deposition Conditions

ABSTRACTA mass spectrometric analysis of heavy hydrocarbons (HHCs) during hot-filament CVD diamond growth was performed together with in situ monitoring of the growth rate. Many HHCs were detected and tentatively identified. Of all HHCs studied, only diacetylene shows good correlation with the diamond growth rate under various deposition conditions. Its possible role is discussed.

Effects of the deposition conditions and annealing process on the electric properties of hot-filament CVD diamond films

2005 ◽  
Vol 274 (1-2) ◽  
pp. 21-27 ◽  
Author(s):  
Minglong Zhang ◽  
Yiben Xia ◽  
Linjun Wang ◽  
Beibei Gu ◽  
Qingfeng Su ◽  
...  
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Annealing Process ◽  
Electric Properties ◽  
Hot Filament Cvd ◽  
Hot Filament ◽  
Deposition Conditions

scholarly journals Unusual Dependence of the Diamond Growth Rate on the Methane Concentration in the Hot Filament Chemical Vapor Deposition Process

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Lower Growth ◽  
Filament Temperature ◽  
Diamond Phase ◽  
Hot Filament

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.

Hot filament CVD diamond coating of TiC sliders

2007 ◽  
Vol 16 (3) ◽  
pp. 609-615 ◽  
Author(s):  
S. Konoplyuk ◽  
T. Abe ◽  
T. Takagi ◽  
T. Uchimoto
Keyword(s):  
Cvd Diamond ◽  
Diamond Coating ◽  
Hot Filament Cvd ◽  
Cvd Diamond Coating ◽  
Hot Filament

Effect of Argon during Diamond Deposition by Hot Filament Chemical Vapor Deposition

2016 ◽  
Vol 869 ◽  
pp. 721-726 ◽  
Author(s):  
Divani C. Barbosa ◽  
Ursula Andréia Mengui ◽  
Mauricio R. Baldan ◽  
Vladimir J. Trava-Airoldi ◽  
Evaldo José Corat
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Gas Mixture ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Argon Content

The effect of argon content upon the growth rate and the properties of diamond thin films grown with different grains sizes are explored. An argon-free and argon-rich gas mixture of methane and hydrogen is used in a hot filament chemical vapor deposition reactor. Characterization of the films is accomplished by scanning electron microscopy, Raman spectroscopy and high-resolution x-ray diffraction. An extensive comparison of the growth rate values and films morphologies obtained in this study with those found in the literature suggests that there are distinct common trends for microcrystalline and nanocrystalline diamond growth, despite a large variation in the gas mixture composition. Included is a discussion of the possible reasons for these observations.

Diamond growth on thin Ti wafers via chemical vapor deposition

1995 ◽  
Vol 10 (11) ◽  
pp. 2685-2688 ◽  
Author(s):  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Titanium Substrate ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Diamond Growth ◽  
X Ray ◽  
Hot Filament ◽  
Insight Into

Diamond film was synthesized on thin Ti wafers (as thin as 40 μm) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis.

Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers

2019 ◽  
Vol 19 (2) ◽  
pp. 672-677 ◽  
Author(s):  
Raju Ahmed ◽  
Anwar Siddique ◽  
Jonathan Anderson ◽  
Chris Engdahl ◽  
Mark Holtz ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Selective Area ◽  
Hot Filament Cvd ◽  
Hot Filament ◽  
Area Deposition

Investigation of Electron Emission From Si and Hot Filament CVD Diamond

1996 ◽  
Vol 424 ◽  
Author(s):  
J. Y. Shim ◽  
E. J. Chi ◽  
S. J. Rho ◽  
H. K. Baik
Keyword(s):  
Field Emission ◽  
Electron Emission ◽  
Cvd Diamond ◽  
Emission Characteristics ◽  
Turn On ◽  
Low Field ◽  
Hot Filament Cvd ◽  
Diamond Peak ◽  
Diamond Grain ◽  
Hot Filament

ABSTRACTThe field emission characteristics of the Si emitters and the diamond coated Si emitters are investigated. The Fowler-Nordheim plots of the two types of Si emitters show linear slopes. It means that the I-V characteristics follow the Fowler-Nordheim relation. Field emission for the two types of diamond coated Si emitters exhibits significant enhancement both in turn-on voltage and total emission current. The Raman spectrum shows that the high intensity graphite peak is observed with diamond peak and thereby large amounts of graphite may be included in the diamond grain boundary. It seems to be thought that the graphite participates in the low field emission. However, further investigations are needed to understand whether the graphite may enhance the emission characteristics of diamond or not.

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