The Effects of ion Bombardment in Plasma Polymerization

1986 ◽  
Vol 68 ◽  
Author(s):  
Richard J. Buss
Keyword(s):  
Plasma Polymerization ◽  
Molecular Beam ◽  
Vacuum Chamber ◽  
Uv Light ◽  
Film Surface ◽  
Ion Bombardment ◽  
Ir Absorption ◽  
Ir Absorption Spectra ◽  
Plasma Species

AbstractA molecular beam probe technique has been used to investigate the role of ion bombardment of the film surface during the plasma polymeriz-ation process.Thin films have been deposited in a vacuum chamber from a molecular beam containing all the plasma species and these were compared with similar deposits from a beam with the charged particles deflected away.A comparison was made of deposition rates, vis/UV and IR absorption spectra of the films.It was found that the deposition rate was increased 20% with the elimination of ion bombardment.Ions incident on the film surface during deposition cause a net ablation of the film.The ion bombardment also causes an increased absorption of UV and near UV light by the film resulting in a noticeable yellowing.No change was observed in the IR spectra of the films with ion deflection.

The Role of Ions for the Deposition of Hydrocarbon Films, investigated by In-Situ Ellipsometry

1995 ◽  
Vol 388 ◽  
Author(s):  
A. Von Keudell
Keyword(s):  
Growth Rate ◽  
Film Surface ◽  
Ion Bombardment ◽  
Floating Potential ◽  
Film Properties ◽  
Ecr Plasma ◽  
Hydrocarbon Films ◽  
Self Bias

AbstractThe growth mechanisms for the deposition of hydrocarbon films (C:H-films) from a methane electron cyclotron resonance (ECR) plasma are investigated by means of in-situ ellipsometry. Ion bombardment during plasma-enhanced chemical vapor deposition of hydrocarbon films mainly governs the properties of the films and the total growth rate. the role of ions for the growth rate and the film properties is discussed in this paper. Films were deposited with varying RF-bias, resulting in a DC self-bias ranging from floating potential up to 100 V. the ion-induced modification of the film properties was investigated by a new technique using a double layer consisting of a polymer-like film with low optical absorption and a hard carbon film with high absorption on top. the interface between these layers was analysed after deposition by a layer-by-layer etching in an oxygen plasma at floating potential. From these data it is possible to determine with high accuracy the range of the ion-induced modification of the optical properties in the underlying polymer-like film. the thickness of this modified layer ranges from 6 Å at 30 V self-bias to 40 Å at 100 V self-bias, which is consistent with the range of hydrogen ions in polymerlike films as calculated by the computer code TRIM.SP.Based on the presented results, the growth of C:H-films and the resulting film properties can be modelled by the growth at activated sites at the film surface. these activated sites are represented by dangling bonds, induced by the ion bombardment. they also show up in the ellipsometric results during the deposition of C:H-films by a change of the optical response of the film surface.

New replica method with plasma polymerized film by glow discharge

1988 ◽  
Vol 46 ◽  
pp. 414-415
Author(s):  
A. Tanaka ◽  
M. Yamaguchi ◽  
T. Hirano
Keyword(s):  
Power Supply ◽  
Plasma Polymerization ◽  
Vacuum Chamber ◽  
Complex Surface ◽  
Replica Method ◽  
Metal Extraction ◽  
High Voltage Power Supply ◽  
Negative Glow ◽  
Hydrocarbon Gas ◽  
Hydrocarbon Molecules

The plasma polymerization replica method and its apparatus have been devised by Tanaka (1-3). We have published several reports on its application: surface replicas of biological and inorganic specimens, replicas of freeze-fractured tissues and metal-extraction replicas with immunocytochemical markers.The apparatus for plasma polymerization consists of a high voltage power supply, a vacuum chamber containing a hydrocarbon gas (naphthalene, methane, ethylene), and electrodes of an anode disk and a cathode of the specimen base. The surface replication by plasma polymerization in negative glow phase on the cathode was carried out by gassing at 0.05-0.1 Torr and glow discharging at 1.5-3 kV D.C. Ionized hydrocarbon molecules diffused into complex surface configurations and deposited as a three-dimensionally polymerized film of 1050 nm in thickness.The resulting film on the complex surface had uniform thickness and showed no granular texture. Since the film was chemically inert, resistant to heat and mecanically strong, it could be treated with almost any organic or inorganic solvents.

Near-IR Absorption Spectra for the Buckminsterfullerene Anions: An Experimental and Theoretical Study

1992 ◽  
Author(s):  
Del R. Lawson ◽  
Daniel L. Feldheim ◽  
Colby A. Foss ◽  
Peter K. Dorhoug ◽  
C. M. Elliott
Keyword(s):  
Absorption Spectra ◽  
Theoretical Study ◽  
Ir Absorption ◽  
Near Ir ◽  
Ir Absorption Spectra

scholarly journals Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals

scholarly journals Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 640
Author(s):  
Artem I. Khrebtov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Kulagina ◽  
Rodion R. Reznik ◽  
Ivan D. Skurlov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Molecular Beam ◽  
Surface Passivation ◽  
Low Energy ◽  
Trioctylphosphine Oxide ◽  
Reverse Transfer ◽  
Semiconductor Heterostructure ◽  
Ligand Type

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

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