Pre-Gate Oxidation Cleaning of Silicon Wafer by Electric Arc Plasma Jet Treatment
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ABSTRACTThe effect of arc plasma jet treatment (APJT) of silicon surface used for pre-gate oxidation cleaning on the electrophysical parameters of MOS structures (Si/SiO2/Si*/Al) has been studied- We show that APJT etching cleaning considerably improves the constant current charge to breakdown of MOS structures in comparison with conventional wet chemical cleaning. We have analyzed the effect of plasma cleaning conditions on the quality of gate oxide and SiO2/Si interface.
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High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes
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1997 ◽
Vol 1
(2)
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pp. 167-178
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Dc Arc
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2017 ◽
Vol 23
(S1)
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pp. 1266-1267
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