Influence of Polysilicon Processing on the Quality of Thin RTP/Furnace Gate Oxides

1990 ◽  
Vol 182 ◽  
Author(s):  
J. Haase ◽  
R. Ferretti ◽  
S. Prasad
Keyword(s):  
Process Parameters ◽  
Thin Layers ◽  
Constant Current ◽  
Gate Oxides ◽  
Different Temperatures ◽  
Current Densities ◽  
Phosphorus Doped ◽  
Mos Structures

AbstractThin layers of oxides (10–11nm) were fabricated by rapid thermal (RTP) or furnace oxidation. The RTP oxides were grown at different temperatures and were exposed to a two step post oxidation anneal (POA). The furnace oxides were grown at one temperature and received different POA/s. As gate metallization, in-situ phosphorus-doped polysilicon was used. Post poly anneal (PPA) is carried out in the RTP system using a set of temperatures. After having defined MOS structures by photolithography oxide charges, breakdown voltages and breakdown charges were determined. For different current densities, FN-voltage shift during constant current injection was monitored to make lifetime predictions. Received data were correlated to the different process parameters.

Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing

2006 ◽  
Vol 527-529 ◽  
pp. 987-990 ◽  
Author(s):  
Tsunenobu Kimoto ◽  
H. Kawano ◽  
Masato Noborio ◽  
Jun Suda ◽  
Hiroyuki Matsunami
Keyword(s):  
Breakdown Strength ◽  
Oxide Thickness ◽  
Interface State ◽  
State Density ◽  
Interface Properties ◽  
Gate Oxides ◽  
Channel Mobility ◽  
Oxide Deposition ◽  
Mos Structures

Oxide deposition followed by high-temperature annealing in N2O has been investigated to improve the quality of 4H-SiC MOS structures. Annealing of deposited oxides in N2O at 1300oC significantly enhances the breakdown strength and decreases the interface state density to 3x1011 cm-2eV-1 at EC – 0.2 eV. As a result, high channel mobility of 34 cm2/Vs and 52 cm2/Vs has been attained for inversion-type MOSFETs fabricated on 4H-SiC(0001)Si and (000-1)C faces, respectively. The channel mobility shows a maximum when the increase of oxide thickness during N2O annealing is approximately 5 nm. A lateral RESURF MOSFET with gate oxides formed by the proposed process has blocked 1450 V and showed a low on-resistance of 75 mcm2, which is one of the best performances among lateral SiC MOSFETs reported.

Silicon Electrochemical Etching for 3D Microforms with High Quality Surfaces

2011 ◽  
Vol 325 ◽  
pp. 666-671 ◽  
Author(s):  
Alexey Ivanov ◽  
Ulrich Mescheder
Keyword(s):  
Surface Quality ◽  
Electrochemical Etching ◽  
Thin Layers ◽  
Etch Depth ◽  
Work Piece ◽  
Fluidic Devices ◽  
Current Densities ◽  
Shape Controlling ◽  
Silicon Anodization

In this paper the process of silicon anodization as a structuring technique is discussed. 3D-structuring is achieved by 3D control of current density in an anodization process. In contrast to conventional ECM techniques electrodes as structured thin layers on the work piece are used. For the shape controlling of etch form frontside masking design and local backside doping are presented. Influences of the opening size and etch depth on the shape of the etch form is shown. The surface quality of the resulting 3D structures is investigated, with best surface quality (about 1 nm rms) being obtained for electropolishing in 7 wt.% HF at applied current densities of 100 ‑ 300 mA/cm². Application of 3D silicon forms for injection moulding is demonstrated and further implementations of the process for optical and fluidic devices are discussed.

Electromigration Reliability of Electroplated Gold Interconnects

2014 ◽  
Vol 1692 ◽  
Author(s):  
Steve H. Kilgore ◽  
Dieter K. Schroder
Keyword(s):  
Current Density ◽  
Open Circuit ◽  
Constant Current ◽  
Measured Temperature ◽  
Lifetime Distributions ◽  
Current Densities ◽  
Log Normal ◽  
Equipment Application ◽  
A Current

ABSTRACTThe electromigration lifetimes of a very large quantity of passivated electroplated Au interconnects were measured utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C prevented large Joule-heated temperature gradients and electrical overstress failures. A Joule-heated Au film temperature increase of 10°C on average was determined from measured temperature coefficients of resistance (TCRs). A failure criterion of 50% resistance degradation was selected to avoid thermal runaway and catastrophic open circuit failures. All Au lifetime distributions followed log-normal statistics. An activation energy of 0.80 ± 0.05 eV was measured from constant-current electromigration tests at multiple temperatures. A current density exponent of 1.91 ± 0.03 was extracted from multiple current densities at a single constant temperature.

Low Resistivity Nickel Germanosilicide Contacts to Ultra-shallow Junctions Formed by the Selective Si1-xGexTechnology for Nanoscale CMOS

2003 ◽  
Vol 765 ◽  
Author(s):  
Jing Liu ◽  
Hongxiang Mo ◽  
Mehmet C. Öztürk
Keyword(s):  
Direct Impact ◽  
Interface Morphology ◽  
Low Resistivity ◽  
Nanoscale Cmos ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Phosphorus Doped ◽  
Thermal Stability Of

AbstractIn this paper, we present our recent results on nickel germanosilicide contacts formed on p+-n and n+-p junctions formed by selective deposition of in-situ doped Si1-xGexalloys. Our results show that ultra-thin, low resistivity NiSi1-xGexcontacts can be formed at temperatures as low as 300°C on both boron and phosphorus doped Si1-xGexlayers. Ultra-shallow junctions with excellent reverse leakage behavior and a contact resistivity ∼ of 10-8ohm-cm2were successfully demonstrated. The thermal stability of NiSi1-xGexwas found to be limited to 500°C on p+-Si1-xGexand 600°C onn+-Si1-xGex. It was found that by inserting a thin Pt interlayer between Ni and Si1-xGex, the quality of the NiSi1-xGexcontacts could be significantly improved. The Pt interlayer was found to improve the interface morphology, which was found to have a direct impact on the electrical properties of the contacts.

Growth of YSZ and Y2O3 Films on SI(100) by Solid State Epitaxy

1992 ◽  
Vol 275 ◽  
Author(s):  
J. Wecker ◽  
TH. Matthee ◽  
H. Behner ◽  
G. Friedl ◽  
K. Samwer
Keyword(s):  
Solid State ◽  
Buffer Layers ◽  
High Current ◽  
Low Oxygen ◽  
Critical Temperatures ◽  
Depth Profiles ◽  
Partial Pressures ◽  
Current Densities

ABSTRACTSingle crystalline YSZ and Y2O3 thin films are grown on Si(100) by e-beam evaporation. The amorphous S1O2 surface layer is removed in-situ by initially growing at low oxygen partial pressures in the case of YSZ or by first evaporating metallic Y for the growth of Y2O3. Epitaxy occurs by a solid state reaction after the SiO2 has been reduced by metallic Zr or Y. For Si/YSZ/Y2O3 the growth is cube on cube while in the case of Si/Y2O3/YSZ the oxide layers grow twinned in (110) orientation. XPS analysis and AES depth profiles reveal the reoxidation of the Si during further growth. Critical temperatures of 90 K and high current densities of 3.2×106 A/cm2 are measured on 150 nm thick YBCO films on SOS/YSZ/Y2O3 proving the excellent quality of the YBCO and the underlying buffer layers.

Influence of Process Parameters on the Surface Passivation Quality of Phosphorus Doped Polysilicon Contacts Deposited by APCVD

2021 ◽  
Author(s):  
Jannatul Ferdous Mousumi ◽  
Geoffrey Gregory ◽  
Christian Nunez ◽  
Jeya Prakash Ganesan ◽  
Ken Provancha ◽  
...  
Keyword(s):  
Process Parameters ◽  
Surface Passivation ◽  
Influence Of Process Parameters ◽  
Phosphorus Doped

Pre-Gate Oxidation Cleaning of Silicon Wafer by Electric Arc Plasma Jet Treatment

1995 ◽  
Vol 386 ◽  
Author(s):  
G. Ya. Pavlov
Keyword(s):  
Plasma Jet ◽  
Constant Current ◽  
Plasma Cleaning ◽  
Arc Plasma ◽  
Chemical Cleaning ◽  
Wet Chemical ◽  
Constant Current Charge ◽  
Mos Structures ◽  
Electrophysical Parameters

ABSTRACTThe effect of arc plasma jet treatment (APJT) of silicon surface used for pre-gate oxidation cleaning on the electrophysical parameters of MOS structures (Si/SiO2/Si*/Al) has been studied- We show that APJT etching cleaning considerably improves the constant current charge to breakdown of MOS structures in comparison with conventional wet chemical cleaning. We have analyzed the effect of plasma cleaning conditions on the quality of gate oxide and SiO2/Si interface.

Immunoferritin localization of intracellular antigens in positively stained frozen sections

1978 ◽  
Vol 36 (2) ◽  
pp. 168-169
Author(s):  
K. T. Tokuyasu
Keyword(s):  
Surface Tension ◽  
Water Surface ◽  
Thin Layers ◽  
The Other ◽  
Positive Staining ◽  
Frozen Sections ◽  
The Past ◽  
Ultrathin Frozen Sections ◽  
Definition Of

During the past investigations of immunoferritin localization of intracellular antigens in ultrathin frozen sections, we found that the degree of negative staining required to delineate u1trastructural details was often too dense for the recognition of ferritin particles. The quality of positive staining of ultrathin frozen sections, on the other hand, has generally been far inferior to that attainable in conventional plastic embedded sections, particularly in the definition of membranes. As we discussed before, a main cause of this difficulty seemed to be the vulnerability of frozen sections to the damaging effects of air-water surface tension at the time of drying of the sections.Indeed, we found that the quality of positive staining is greatly improved when positively stained frozen sections are protected against the effects of surface tension by embedding them in thin layers of mechanically stable materials at the time of drying (unpublished).

Pengaruh Jenis Co-Solvent terhadap Rendemen dan Mutu Biodiesel secara Transesterifikasi In Situ Menggunakan Radiasi Gelombang Mikro

2016 ◽  
Vol 10 (2) ◽  
pp. 119-126
Author(s):  
Mahlinda Mahlinda ◽  
Fitriana Djafar
Keyword(s):  
Catalyst Concentration ◽  
Maximum Yield ◽  
Acid Value ◽  
Experimental Result ◽  
In Situ Transesterification ◽  
Yield And Quality ◽  
Solvent Type ◽  
Biodiesel Quality

The main purpose of this research was to observer effect co-solvent type (n-Hexane, chloroform and without co-solvent)  toward yield and quality of biodiesel via in situ transesterification process using microwave irradiation. The process was studied at microwave power 450 watt, reaction time 4 minutes, methanol to seed ratio 25:1 and catalyst concentration 5%. The physicochemical parameters of the biodiesel produced such as viscosity, density and acid value were analysed and compared with the SNI 7182-2012 standard. The experimental result showed the maximum yield biodiesel 78,32% obtained by using co-solvent chloroform.Test result of physicochemical properties (viscosity, density and acid value) of biodiesel products using co solvent n-Hexane, chloroform and without co solvent showed that these products conform to the SNI 7182-2012 standars. The type of co-solvent only affectedon biodiesel yield dan not affected on biodiesel quality (viscosity, density and acid value).  ABSTRAKTujuan penelitian ini adalah untuk mempelajari pengaruh jenis co-solvent (n-Hexane, chloroform dan tanpa co-solvent) terhadap rendemen dan mutu biodiesel secara trasesterifikasi in situ menggunakan radiasi gelombang mikro. Proses dilakukan pada daya gelombang mikro 450 watt, waktu reaksi 4 menit, perbandingan berat metanol terhadap bahan baku 25:1 dan jumlah katalis 5%. Parameter fisiko kimia dari produk biodiesel seperti viskositas, densitas dan angka asam di analisa dan dibandingkan dengan standar SNI 7182-2012 tentang biodiesel. Hasil penelitian menunjukkan rendemen maksimum biodiesel sebesar 78,32% diperoleh dengan menggunakan co-solvent chloroform. Hasil pengujian  karakteristik fisiko kimia (viskositas, densitas dan angka asam) dari produk biodiesel menggunakan co-solvent n-Hexane, chloroform dan tanpa co-solvent menunjukkan bahwa semua parameter ini masih memenuhi standar SNI 1782-2012 tentang biodiesel. Jenis co-solvent hanya berpengaruh pada rendemen biodiesel dan tidak berpengaruh terhadap mutu biodiesel (viskositas, densitas dan bilangan asam).Kata kunci: co-solvent, in situ transesterifikasi, microwave, rendemen, mutu   

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