Device Quality of Hydrogen Plasma Cleaning for Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 386 ◽  
Author(s):  
W. Hansch ◽  
I. Eisele ◽  
H. Kibbel ◽  
U. KÖnig
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hydrogen Plasma ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Plasma Cleaning ◽  
Chemical Cleaning ◽  
Cleaning Procedures ◽  
Desorption Step

ABSTRACTDifferent substrate cleaning procedures were used before fabrication of pin diodes by silicon molecular beam epitaxy (MBE). We investigated the quality of these diodes in order to demonstrate the superior quality of a low energy plasma cleaning in an ultra-high vacuum ( UHV). This plasma cleaning by hydrogen makes a wet-chemical cleaning or a high-temperature desorption step unnecessary. Moreover, the plasma-cleaned substrates are so strongly hydrogen passivated, that they can be transported through air and processed in another MBE chamber without any additional cleaning steps.

The growth of gallium arsenide on Si(100) by molecular-beam epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 904-908 ◽  
Author(s):  
W. T. Moore ◽  
R. L. S. Devine ◽  
P. Maigné ◽  
D. C. Houghton ◽  
J.-M. Baribeau ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Vacuum ◽  
Group Iv ◽  
Ultra High Vacuum ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
X Ray

The growth of GaAs on Si(100) directly and with Ge buffer layers has been carried out sequentially under ultra high vacuum conditions in a double-ended III–V and group IV molecular beam epitaxy system. These heterostructures were examined by cross-section transverse emission microscopy, Rutherford backscattering, X-ray diffraction, and photoluminescence spectroscopy.Dislocation densities were observed to be high [Formula: see text] near both the GaAs–Si and the Ge–Si interfaces and to decrease to ~5 × 108 cm−2 a few micrometres from these interfaces. No dislocations were observed to originate at the GaAs–Ge interface, but the threading dislocations existing in the Ge buffer layer were found to propagate across this interface without significant deviation. The crystalline quality of the GaAs grown on Ge buffer layers was comparable with that grown on Si directly. However, GaAs has not yet been grown on the highest quality Ge buffer layers obtainable.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Ultra-high-vacuum epitaxial growth of MgB2(0001) thin films on Mg(0001) via molecular beam epitaxy

2004 ◽  
Vol 16 (33) ◽  
pp. S3451-S3458 ◽  
Author(s):  
R Macovez ◽  
C Cepek ◽  
M Sancrotti ◽  
A Goldoni ◽  
L Petaccia ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Vacuum ◽  
Ultra High Vacuum

Amorphous Silicon Films and Superlattices Grown by Molecular Beam Epitaxy: An Optical Analysis

2002 ◽  
Vol 715 ◽  
Author(s):  
D. J. Lockwood ◽  
J.-M. Baribeau ◽  
M. Noël ◽  
J. C. Zwinkels ◽  
B. J. Fogal ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Amorphous Silicon ◽  
Molecular Beam ◽  
Crystalline Silicon ◽  
Quartz Substrate ◽  
High Vacuum ◽  
Impurity Content ◽  
Thin Layers ◽  
Silicon Films ◽  
Ultra High Vacuum

AbstractWe produce a novel form of amorphous silicon through ultra-high-vacuum molecular beam epitaxy. By depositing silicon atoms onto a fused quartz substrate at temperatures between 98 and 335°C, we obtain a silicon-based material that lacks the characteristic periodicity of crystalline silicon but nevertheless has 98% of its density. The impurity content of this material is studied through infrared and secondary ion mass spectroscopies. The primary impurity found is oxygen, with hydrogen and carbon atoms also being found at trace levels. The Raman spectra of the amorphous silicon films are measured and the results, as they relate to the presence of disorder, are interpreted. We also use this molecular beam epitaxy method to fabricate a number of amorphous silicon superlattices, comprised of thin layers of amorphous silicon separated with even thinner layers of SiO2. The optical properties of the films and superlattices are contrasted.

Low Temperature GaAs Growth on GaAs and Si with Metal-Organic Molecular Beam Epitaxy Assisted by Hydrogen Plasma

1988 ◽  
Vol 144 ◽  
Author(s):  
Ikuo Suemune ◽  
Yasuhiro Kunitsugu ◽  
Yoshimitsu Tanaka ◽  
YAsuo Kan ◽  
Masamichi Yamanishi
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Organic Compounds ◽  
Molecular Beam ◽  
Hydrogen Plasma ◽  
Selective Growth ◽  
Plasma Cleaning ◽  
Metal Organic ◽  
Low Temperature Gaas

ABSTRACTNew low-temperature cleaning and growth processes are presented using hydrogen plasma. Cleaning of GaAs and Si surfaces are possible above 200°C and 300°C, respectively. Single-domain GaAs thin films are successfully grown on Si at 400°C using metal-organic compounds for both Ga and As. Selective growth of GaAs is demonstrated at 400°C on a Si surface partially covered withSiO2.

scholarly journals Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 87818-87830 ◽  
Author(s):  
S. S. Kushvaha ◽  
M. Senthil Kumar ◽  
A. K. Shukla ◽  
B. S. Yadav ◽  
Dilip K. Singh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Properties ◽  
Molecular Beam ◽  
High Vacuum ◽  
Nitrogen Plasma ◽  
Ultra High Vacuum ◽  
Laser Molecular Beam Epitaxy ◽  
Molecular Beam Epitaxy System ◽  
Optical And Electronic Properties

We have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a constant r.f. nitrogen plasma ambient.

Self-aligning phenomena of ZnCdSe islands grown by molecular beam epitaxy on GaAs(110) surface cleaved in ultra high vacuum

1997 ◽  
Vol 117-118 ◽  
pp. 484-488 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Doo-Cheol Park ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Vacuum ◽  
Ultra High Vacuum

Device quality of in situ plasma cleaning for silicon molecular beam epitaxy

1995 ◽  
Vol 157 (1-4) ◽  
pp. 100-104 ◽  
Author(s):  
W. Hansch ◽  
I. Eisele ◽  
H. Kibbel ◽  
U. König ◽  
J. Ramm
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Cleaning
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