Novel Photocurable Materials For Spinon Dielectric Films

1995 ◽  
Vol 381 ◽  
Author(s):  
James V. Crivello
Keyword(s):  
Thermal Stability ◽  
Cationic Polymerization ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Polymer Backbone ◽  
Excellent Thermal Stability ◽  
Transparent Films ◽  
Low Dielectric ◽  
Film Forming ◽  
Diaryliodonium Salt

AbstractPoly(indanes) can be prepared by the photoinduced cationic polymerization of a variety of diisopropenyl aromatic monomers. Typically, polymerization proceeds rapidly under UV irradiation catalyzed by diaryliodonium salt photoinitiators to give hard, transparent films. Investigations have shown that the polymerization proceeds mainly by a dimerization followed by a ringclosure process to yield indane structures along the polymer backbone. Film-forming mixtures containing either pure monomer or mixtures of monomers together with a poly(indane) prepolymer can be spin coated onto silicon wafers. Measurements made on the photopolymerized coatings give low dielectric constants. These coatings also display excellent thermal stability.

Structure and Properties of Polysilsesquioxanes and Copolymers for Ultra-Low Dielectric Films

2003 ◽  
Vol 766 ◽  
Author(s):  
Do Y. Yoon ◽  
Hyun Wook Ro ◽  
Eun Su Park ◽  
Jin-Kyu Lee ◽  
Hie-Joon Kim ◽  
...  
Keyword(s):  
Copper Interconnects ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Structure And Properties ◽  
Structure Property ◽  
Detailed Structure ◽  
Low Dielectric ◽  
Structure Property Relationships ◽  
Mechanical Modulus ◽  
Made In

AbstractPolysilsesquioxanes (PSSQs) with the empirical formula (RSiO3/2)n have become very important as low-dielectric insulators for copper interconnects in the next-generation logic devices, but the detailed structure-property relationships were completely lacking. We have investigated the microstructure and functional properties of PSSQs with varying alkyl substituents and also PSSQ copolymers. As a result, significant advances have been made in the scientific understanding of PSSQ structures and significant improvements of key properties such as the crack resistance, mechanical modulus and hardness, and incorporation of nanometer-sized (<4 nm) porosity for ultra-low dielectric constants (<2.0).

Effects of Electron Beam Exposure on Poly(Arylene Ether) Dielectric Films

1997 ◽  
Vol 476 ◽  
Author(s):  
J. S. Drage ◽  
J. J. Yang ◽  
D. K. Choi ◽  
R. Katsanes ◽  
K. S. Y. Lau ◽  
...  
Keyword(s):  
Electron Beam ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Large Area ◽  
Dielectric Coatings ◽  
Low Dielectric ◽  
Arylene Ether ◽  
Excellent Candidate ◽  
Before And After ◽  
Beam Dose

AbstractThis paper presents a study of the effects of electron beam (e-beam) exposure on the chemical and physical properties of FLARE™ 1.0X, a non-fluorinated member of the FLARE™ family of poly(arylene ether) dielectric coatings. Spin-coated films of this poly(arylene ether) were cured by large-area e-beam exposure, as well as by conventional thermal processing. Neither swelling nor dissolution was observed for the e-beam cured films after immersion in N-methylpyrrolidone (NMP) at 90 °C for 1 hour. The glass transition temperature (Tg) for films cured with a low e-beam dose is slightly higher than, or nearly the same as, the (Tg) for thermally-cured films (∼ 270 °C). However, the Tg for films cured with a high e-beam dose exceeds 400 °C. Dielectric constants of e-beam cured films and thermally cured films are nearly the same. FTIR spectra of FLARE™ films obtained before and after e-beam exposure suggest that e-beam curing does not induce any significant change in the chemical structure. Increased solvent resistance, higher Tg, and low dielectric constant are properties that make this e-beam cured poly(arylene ether) film an excellent candidate for interlevel dielectric integration processes.

Epoxy/benzoxazinyl POSS nanocomposite resin with low dielectric constant and excellent thermal stability

2020 ◽  
Vol 138 (8) ◽  
pp. 49887
Author(s):  
Xiaodan Li ◽  
Jiacheng Feng ◽  
Shuai Zhang ◽  
Ying Tang ◽  
Xinyu Hu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Excellent Thermal Stability ◽  
Low Dielectric

Preparation and Properties of Polysilsesquioxanes - Polysilsesquioxanes as a Candidate to a Low Dielectrics for Electronic Devices -

1999 ◽  
Vol 565 ◽  
Author(s):  
Yoshimoto Abe ◽  
Keiko Kagayama ◽  
Norihiro Takamura ◽  
Takahiro Gunji
Keyword(s):  
Molecular Weight ◽  
Elevated Temperatures ◽  
Heating Time ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Coating Films ◽  
Low Dielectric ◽  
Inorganic Substrates ◽  
Acid And Base ◽  
Molecular Weight Increase

AbstractPolysilsesquioxanes PSSQ as a candidate of coatings for interlayer low dielectric films were synthesized by acid and base catalyzed hydrolytic polycondensation of RSi(OMe)3 (R=methyl, vinyl, 3-methacryloxypropyl). Dip and spin coating of PSSQ on organic and inorganic substrates followed by curing at 100 °C, 400 °C, and 450 °C provided transparent and tough coating films of thickness 2000–9000 A. Polysilsesquioxanes adhered strongly to the substrates to form coating films of which the adhesion strength and hardness were 10 and 9H based on JIS K5400 comparable to ISO standard, as heating time and molecular weight increase. On curing at the elevated temperatures, they provided the films with a very smooth surface and the dielectric constants of 3.2∼3.6 (R=3-methacryloxypropyl), 3.8∼4.0 (R=vinyl), and 2.5∼2.7 (R=methyl) depending on film thickness and molecular weight of PSSQ. The films from PSSQ (R=methyl) were found to be porous compared with those from PSSQ (R=vinyl).

scholarly journals Preparation and Characterization of Narrow Size Distribution PMSQ Microspheres for High-Frequency Electronic Packaging

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4233
Author(s):  
Guodong Meng ◽  
Yimeng Li ◽  
Zhengdong Wang ◽  
Cheng Pan ◽  
Wenwu Gao ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Size Distribution ◽  
Electronic Packaging ◽  
High Frequency ◽  
Electronic Circuit ◽  
Dielectric Constants ◽  
Circuit Board ◽  
Narrow Particle Size Distribution ◽  
Excellent Thermal Stability

Polymethylsilsesquioxane (PMSQ) has become a kind of widely studied filler used in the electronic circuit board substrates due to its organic–inorganic hybrid structure, low dielectric constant, and good thermal stability, among other factors. Herein, the PMSQ microspheres were prepared by a two-step acid–base-catalyzed sol–gel method; the influences of reaction conditions including the ratio of water/methyltrimethoxysilane (MTMS), reaction temperature, concentration of the catalyst, and stirring time were systematically investigated; and the optimized reaction condition was then obtained towards a narrow particle size distribution and good sphericity. The microstructure of PMSQ microspheres was analyzed by the infrared spectrum and X-ray diffraction (XRD), which indicated that the as-prepared PMSQ had a ladder-dominant structure. The thermogravimetric analysis (TGA) demonstrated an excellent thermal stability of as-prepared PMSQ microspheres. More specifically, the dielectric constants at high frequency (1~20 GHz) of as-prepared PMSQ microspheres were measured to be about 3.7, which turned out a lower dielectric constant compared to SiO2 powder (≈4.0). This study paves the way to further improve the performance of the electronic circuit board substrates for the application of high-frequency electronic packaging.

Pulsed Plasma Synthesis of Low Dielectric Constant Materials

1998 ◽  
Vol 511 ◽  
Author(s):  
Licheng M. Han ◽  
Richard B. Timmons ◽  
Wei W. Lee
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Plasma Synthesis ◽  
Pulsed Plasma ◽  
Plasma Polymers ◽  
Low Dielectric ◽  
Duty Cycles ◽  
Low Dielectric Constant Materials

ABSTRACTThe utility of a variable duty cycle, pulsed plasma polymerization technique to produce low dielectric constant materials (k < 2.3) is described. The molecular compositions (and thus the dielectric constants) of the plasma polymers are controllable via changes in the plasma duty cycles employed during synthesis, all other reaction variables being held constant. In the present study, this compositional controllability under pulsed conditions is illustrated with two fluoroaromatic monomers. The dielectric constants of the films decrease as the plasma duty cycles employed during polymerization are decreased. Although the as deposited films exhibit relatively poor thermal stability, it was discovered that post-plasma annealing of the films, particularly at 400 °C under N2, provides dramatic improvements in the thermal stability of these materials. Most importantly, this enhanced thermal stability is achieved with relatively minor changes in the dielectric properties of these materials. In fact, synthesis of high thermal stability films having k < 2.0 is demonstrated in this work using the perfluoroaromatic monomer perfluoroallyl benzene.

Poly(Enaminonitriles): Novel Materials For Use In Microelectronics

1991 ◽  
Vol 227 ◽  
Author(s):  
J. A. Moore ◽  
Ji-Heung Kim
Keyword(s):  
Thermal Stability ◽  
Molecular Weight ◽  
High Temperature ◽  
Dielectric Constants ◽  
Condensation Polymerization ◽  
Aromatic Diamines ◽  
Excellent Thermal Stability ◽  
Good Solubility ◽  
Flexible Films ◽  
By Products

ABSTRACTA series of new poly(enaminonitriles) were synthesized by the condensation polymerization of three different bis(chlorodicyano-vinyl) aromatic monomers with various aromatic diamines. These polymers have moderate to high molecular weight with intrinsic viscosities ranging from 0.35 to 0.77 dl/g and form flexible films. These polymers exhibit good solubility in many organic solvents and excellent thermal stability, retaining their weight up to 400 °C in air. Poly(enaminonitriles) undergo ‘curing’ reactions at high temperature (˜300 °C) to provide insoluble, infusible material without emission of volatile by-products. Dielectric constants of these polymers ranged from 3.5 to 5.2 depending on the structure. Their thermal and dielectric properties are correlated to the structures.

scholarly journals Preparation and Characterization of Electrospun Fluoro-Containing Poly(imide-benzoxazole) Nano-Fibrous Membranes with Low Dielectric Constants and High Thermal Stability

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 537
Author(s):  
Meng-Ge Huangfu ◽  
Deng-Xiong Shen ◽  
Xin-Xin Zhi ◽  
Yan Zhang ◽  
Yan-Jiang Jia ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Properties ◽  
High Frequency ◽  
Rapid Development ◽  
Dielectric Constants ◽  
Polymer Materials ◽  
Aromatic Diamines ◽  
Low Dielectric ◽  
Fibrous Membranes ◽  
Poly Imide

The rapid development of advanced high-frequency mobile communication techniques has advanced urgent requirements for polymer materials with high-temperature resistance and good dielectric properties, including low dielectric constants (low-Dk) and low dielectric dissipation factors (low-Df). The relatively poor dielectric properties of common polymer candidates, such as standard polyimides (PIs) greatly limited their application in high-frequency areas. In the current work, benzoxazole units were successfully incorporated into the molecular structures of the fluoro-containing PIs to afford the poly(imide-benzoxazole) (PIBO) nano-fibrous membranes (NFMs) via electrospinning fabrication. First, the PI NFMs were prepared by the electrospinning procedure from organo-soluble PI resins derived from 2,2′-bis(3,4-dicarboxy-phenyl)hexafluoropropane dianhydride (6FDA) and aromatic diamines containing ortho-hydroxy-substituted benzamide units, including 2,2-bis[3-(4-aminobenzamide)-4-hydroxylphenyl]hexafluoropropane (p6FAHP) and 2,2-bis[3-(3-aminobenzamide)-4-hydroxyphenyl]hexafluoropropane (m6FAHP). Then, the PI NFMs were thermally dehydrated at 350 °C in nitrogen to afford the PIBO NFMs. The average fiber diameters (dav) for the PIBO NFMs were 1225 nm for PIBO-1 derived from PI-1 (6FDA-p6FAHP) precursor and 816 nm for PIBO-2 derived from PI-2 (6FDA-m6FAHP). The derived PIBO NFMs showed good thermal stability with the glass transition temperatures (Tgs) over 310 °C and the 5% weight loss temperatures (T5%) higher than 500 °C in nitrogen. The PIBO NFMs showed low dielectric features with the Dk value of 1.64 for PIBO-1 and 1.82 for PIBO-2 at the frequency of 1 MHz, respectively. The Df values were in the range of 0.010~0.018 for the PIBO NFMs.

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