Preparation and Properties of Polysilsesquioxanes - Polysilsesquioxanes as a Candidate to a Low Dielectrics for Electronic Devices -

1999 ◽  
Vol 565 ◽  
Author(s):  
Yoshimoto Abe ◽  
Keiko Kagayama ◽  
Norihiro Takamura ◽  
Takahiro Gunji

AbstractPolysilsesquioxanes PSSQ as a candidate of coatings for interlayer low dielectric films were synthesized by acid and base catalyzed hydrolytic polycondensation of RSi(OMe)3 (R=methyl, vinyl, 3-methacryloxypropyl). Dip and spin coating of PSSQ on organic and inorganic substrates followed by curing at 100 °C, 400 °C, and 450 °C provided transparent and tough coating films of thickness 2000–9000 A. Polysilsesquioxanes adhered strongly to the substrates to form coating films of which the adhesion strength and hardness were 10 and 9H based on JIS K5400 comparable to ISO standard, as heating time and molecular weight increase. On curing at the elevated temperatures, they provided the films with a very smooth surface and the dielectric constants of 3.2∼3.6 (R=3-methacryloxypropyl), 3.8∼4.0 (R=vinyl), and 2.5∼2.7 (R=methyl) depending on film thickness and molecular weight of PSSQ. The films from PSSQ (R=methyl) were found to be porous compared with those from PSSQ (R=vinyl).

2003 ◽  
Vol 766 ◽  
Author(s):  
Do Y. Yoon ◽  
Hyun Wook Ro ◽  
Eun Su Park ◽  
Jin-Kyu Lee ◽  
Hie-Joon Kim ◽  
...  

AbstractPolysilsesquioxanes (PSSQs) with the empirical formula (RSiO3/2)n have become very important as low-dielectric insulators for copper interconnects in the next-generation logic devices, but the detailed structure-property relationships were completely lacking. We have investigated the microstructure and functional properties of PSSQs with varying alkyl substituents and also PSSQ copolymers. As a result, significant advances have been made in the scientific understanding of PSSQ structures and significant improvements of key properties such as the crack resistance, mechanical modulus and hardness, and incorporation of nanometer-sized (<4 nm) porosity for ultra-low dielectric constants (<2.0).


2019 ◽  
Vol 32 (4) ◽  
pp. 444-454 ◽  
Author(s):  
Juan Zhong ◽  
Zhen-Zhong Huang ◽  
Wei-Hong Wei ◽  
Bin Huang ◽  
Cheng Song

A new aromatic diamine, 10,10-bis[4-(4-amino-3-trifluoromethylphenoxy)phenyl]-9( 10H)-anthrone (BATFPA), has been synthesized from anthrone via three-step procedure. Low-temperature polycondensation of BATFPA with various aromatic dicarboxylic acid chlorides produced novel fluorinated polyamides with moderate to high inherent viscosities of 0.75–1.03 dL/g while the weight-average molecular weight and number-average molecular weight were in the range of 66,000–74,000 and 37,000–41,000, respectively. Nearly, all the polymers were readily soluble in polar solvents, such as N,N-dimethyl acetamide (DMAc), N-methyl-2-pyrrolidinone, pyridine, and tetrahydrofuran, and afforded transparent, light-colored, and flexible films upon casting from DMAc solvent. These polymers had glass transition temperatures of 249–309°C, 10% weight loss temperatures of 486–517°C, and char yields of 53–61% at 800°C under nitrogen. All polymers were amorphous and their films exhibited tensile strengths of 64–86 MPa, tensile moduli of 1.8–2.2 GPa, and elongation at break of 10–18%. These polymers had dielectric constants ranging from 3.25 to 3.76 (100 Hz), low moisture uptake in the range of 0.72–1.18%, and high transparency with an ultraviolet–visible absorption cutoff wavelength in the 360–378 nm range.


1997 ◽  
Vol 476 ◽  
Author(s):  
J. S. Drage ◽  
J. J. Yang ◽  
D. K. Choi ◽  
R. Katsanes ◽  
K. S. Y. Lau ◽  
...  

AbstractThis paper presents a study of the effects of electron beam (e-beam) exposure on the chemical and physical properties of FLARE™ 1.0X, a non-fluorinated member of the FLARE™ family of poly(arylene ether) dielectric coatings. Spin-coated films of this poly(arylene ether) were cured by large-area e-beam exposure, as well as by conventional thermal processing. Neither swelling nor dissolution was observed for the e-beam cured films after immersion in N-methylpyrrolidone (NMP) at 90 °C for 1 hour. The glass transition temperature (Tg) for films cured with a low e-beam dose is slightly higher than, or nearly the same as, the (Tg) for thermally-cured films (∼ 270 °C). However, the Tg for films cured with a high e-beam dose exceeds 400 °C. Dielectric constants of e-beam cured films and thermally cured films are nearly the same. FTIR spectra of FLARE™ films obtained before and after e-beam exposure suggest that e-beam curing does not induce any significant change in the chemical structure. Increased solvent resistance, higher Tg, and low dielectric constant are properties that make this e-beam cured poly(arylene ether) film an excellent candidate for interlevel dielectric integration processes.


1995 ◽  
Vol 381 ◽  
Author(s):  
James V. Crivello

AbstractPoly(indanes) can be prepared by the photoinduced cationic polymerization of a variety of diisopropenyl aromatic monomers. Typically, polymerization proceeds rapidly under UV irradiation catalyzed by diaryliodonium salt photoinitiators to give hard, transparent films. Investigations have shown that the polymerization proceeds mainly by a dimerization followed by a ringclosure process to yield indane structures along the polymer backbone. Film-forming mixtures containing either pure monomer or mixtures of monomers together with a poly(indane) prepolymer can be spin coated onto silicon wafers. Measurements made on the photopolymerized coatings give low dielectric constants. These coatings also display excellent thermal stability.


1999 ◽  
Vol 564 ◽  
Author(s):  
S. A. Cohen ◽  
J. Liu ◽  
L. Gignac ◽  
T. Ivers ◽  
D. Armbrust ◽  
...  

AbstractAs technology progresses, the need for thinner Cu diffusion barrier caps is becoming more important, and it is advantageous if these barriers have low dielectric constants (κ). Towards this end, we characterized Cu penetration in several thin (35 nm to 70 nm) dielectrics, including silicon nitrides, silicon oxynitrides, an amorphous hydrogenated carbon film, and a methyl silsesquioxane layer. Metal Insulator Silicon (MIS) structures were used as the test vehicle. The barrier dielectrics were deposited on 100 nm thermal oxide which was grown on 2 Ω-cm, n-type Si wafers. After the deposition of 50 nm TEOS capping layers, both Al and Cu dots were evaporated on each wafer through a mask. Both Al and Cu dot samples were stressed at +2.7 MV/cm at 300°C for 10 minutes. For Cu dots, the applied stress pushed Cu ions into the dielectric stack. Stressing Al dots characterized the effects of the stress on the dielectric stacks and the quantity of Na ions in the films. Since C-V shifts are subject to stress-related instabilities in the interfaces as well as within the dielectrics themselves, triangular voltage sweep (TVS) was used after the applied stress to measure the concentration of Cu which reached the underlying thermal oxide film. The sensitivity of the TVS test with the structures used is about 5×109/cm2. Secondary ion mass spectroscopy (SIMS) analyses were performed on some of these samples to verify the electrical results.


RSC Advances ◽  
2014 ◽  
Vol 4 (77) ◽  
pp. 40782-40787 ◽  
Author(s):  
Jiajia Wang ◽  
Kaikai Jin ◽  
Fengkai He ◽  
Jing Sun ◽  
Qiang Fang

A polymer based on trifluoromethyl-substituted arene was synthesized with high molecular weight (Mn) of 62 000 by the Scholl reaction. The polymer film showed low dielectric constants of about 2.56 in a range of frequencies from 1 to 25 MHz. Moreover, the polymer revealed high thermostability and good mechanical properties, suggesting that the polymer had potential applications in the electronics industry.


1989 ◽  
Vol 154 ◽  
Author(s):  
C. A. Arnold ◽  
Y. P. Chen ◽  
D. H. Chen ◽  
M. E. Rogers ◽  
J. E. McGrath

AbstractPolyimides generally possess excellent thermal and mechanical properties, making them attractive candidates for high performance applications. To be useful for microelectronic applications, however, these materials must also be good insulators, as well as be readily processable.The incorporation of flexible polysiloxane segments into the polyimide backbone structure has been shown to yield soluble, processable copolyimides with good thermal and mechanical properties. In addition, the siloxane component imparts a number of other significant benefits for electronic applications. These include reduced water sorption, surface modification, good thermal and ultraviolet stability, and resistance to degradation in oxygen plasma environments. For polar polyimide systems, siloxane incorporation will also reduce the dielectric constant. The use of other less polar, more hydrophobic monomers will consistently yield soluble systems with lower dielectric constants as well.In this work, a series of high molecular weight, soluble polyimide homopolymers and segmented polysiloxane-polyimide copolymers were synthesized by a solution technique. The solution procedure, conducted at lower temperatures (˜170°C) than the classical bulk thermal imidization (300°C), has been shown to yield polyimides of enhanced solubility. In order to further enhance processability, molecular weight was controlled through the incorporation of monofunctional reagents such as phthalic anhydride and maleic anhydride, yielding nonreactive or potentially reactive endgroups, respectively. A series of maleic anhydride terminated imide oligomers with varying molecular weights were synthesized based upon the hexafluoropropane linked dianhydride and bisaniline diamine. In their oligomeric state, they exhibited enhanced solubility compared with their linear high molecular weight analogue. As these monomers were relatively nonpolar and hydrophobic, they afforded polyimides of low dielectric constant and a low level of water sorption. After thermally crosslinking the endgroups, the advantages of insoluble network systems could be realized. Particular advantages for electronic applications include thermal and dimensional stability over a wide temperature range, good mechanical properties, and chemical resistance. Structure-property characterization, including water sorption, dielectric constants, solubility behavior and thermal/mechanical properties will be reported.


2001 ◽  
Vol 714 ◽  
Author(s):  
Brian P. Gorman ◽  
Rosa A. Orozco-Teran ◽  
Jodi A. Roepsch ◽  
Dennis W. Mueller ◽  
Richard F. Reidy

ABSTRACTScaling requirements of the semiconductor industry demand interlayer dielectric materials with low dielectric constants, chemical compatibility with Cu, thermal and mechanical stability, and the capability of integration into planned device structures. We have developed a novel low-k silica gel processing technique capable of both bulk and spin-on film architectures. Derived from fluorinated silica, this gel exhibits very low dielectric constants (1.18 in bulk and 2.1 in thin film measured using AC impedance methods). Structural determination from FTIR illustrates a fluorinated silica structure with shortened Si-O bonds, however, the fluorine is lost after annealing at elevated temperatures. Microstructural analysis by TEM indicate a highly unusual morphology with highly linked features and pore sizes in the 30nm range, coinciding with nitrogen adsorption results. Mechanical properties of the thin films, as studied by nanoindentation methods, shows that the films have extraordinarily high elastic moduli (12GPa) and hardness (1GPa).


1999 ◽  
Vol 565 ◽  
Author(s):  
S. A. Cohen ◽  
J. Liu ◽  
L. Gignac ◽  
T. Ivers ◽  
D. Armbrust ◽  
...  

AbstractAs technology progresses, the need for thinner Cu diffusion barrier caps is becoming more important, and it is advantageous if these barriers have low dielectric constants (κ). Towards this end, we characterized Cu penetration in several thin (35 nm to 70 nm) dielectrics, including silicon nitrides, silicon oxynitrides, an amorphous hydrogenated carbon film, and a methyl silsesquioxane layer. Metal Insulator Silicon (MIS) structures were used as the test vehicle. The barrier dielectrics were deposited on 100 nm thermal oxide which was grown on 2 Ω-cm, n-type Si wafers. After the deposition of 50 nm TEOS capping layers, both Al and Cu dots were evaporated on each wafer through a mask. Both Al and Cu dot samples were stressed at +2.7 MV/cm at 300°C for 10 minutes. For Cu dots, the applied stress pushed Cu ions into the dielectric stack. Stressing Al dots characterized the effects of the stress on the dielectric stacks and the quantity of Na ions in the films. Since C-V shifts are subject to stress-related instabilities in the interfaces as well as within the dielectrics themselves, triangular voltage sweep (TVS) was used after the applied stress to measure the concentration of Cu which reached the underlying thermal oxide film. The sensitivity of the TVS test with the structures used is about 5×109/cm2. Secondary ion mass spectroscopy (SIMS) analyses were performed on some of these samples to verify the electrical results.


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