Fabrication of Semiconductor Nanostructures With an Atomic Force Microscope

1995 ◽  
Vol 380 ◽  
Author(s):  
E. S. Snow ◽  
P. M. Campbell
Keyword(s):  
Electric Field ◽  
Atomic Force Microscope ◽  
Semiconductor Nanostructures ◽  
Selective Etching ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Local Electric Field ◽  
Nanometer Scale ◽  
Atomic Force ◽  
Resolution Limits

ABSTRACTAn AFM-based nanolithography process is described. We employ the local electric field of a metal-coated AFM tip which is operated in air to selectively oxidize regions of a H-passivated Si surface. The resulting oxide, ∼ 3 nm thick, is used as a mask for selective etching of the unoxidized regions of Si. This AFM-based fabrication process is fast, reliable, simple to perform and is well suited for device fabrication. We apply this technique to the fabrication of Si and GaAs nanostructures, as well as to the fabrication of a nanometer-scale Si side-gated transistor. In addition, we discuss the ultimate resolution limits of the technique.

scholarly journals Fabrication of sharp atomic force microscope probes using in situ local electric field induced deposition under ambient conditions

2016 ◽  
Vol 87 (11) ◽  
pp. 113703 ◽  
Author(s):  
Alexei Temiryazev ◽  
Sergey I. Bozhko ◽  
A. Edward Robinson ◽  
Marina Temiryazeva
Keyword(s):  
Electric Field ◽  
Atomic Force Microscope ◽  
Local Electric Field ◽  
Ambient Conditions ◽  
Atomic Force

A Study of the Photoelectric Effect Caused by a Laser Beam Used in a Beam Bounce Technique in a C-AFM System

2008 ◽  
Author(s):  
Hung-Sung Lin ◽  
Mong-Sheng Wu
Keyword(s):  
Laser Beam ◽  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Photoelectric Effect ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Electrical Characteristics ◽  
Atomic Force ◽  
Probe Microscope ◽  
Probe Head

Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure extremely small movements of the cantilever as it is moved across the surface of the sample. However, the laser beam used for a beam bounce also gives rise to the photoelectric effect while we are measuring the electrical characteristics of a device, such as a pn junction. In this paper, the photocurrent for a device caused by photon illumination was quantitatively evaluated. In addition, this paper also presents an example of an application of the C-AFM as a tool for the failure analysis of trap defects by taking advantage of the photoelectric effect.

scholarly journals Nanometer-scale Mechanical Processing of Muscovite Mica by Atomic Force Microscope.

1997 ◽  
Vol 63 (3) ◽  
pp. 426-430 ◽  
Author(s):  
Shojiro MIYAKE ◽  
Masanori ISHII ◽  
Toshiaki OTAKE ◽  
Naotake TSUSHIMA
Keyword(s):  
Atomic Force Microscope ◽  
Nanometer Scale ◽  
Mechanical Processing ◽  
Atomic Force ◽  
Muscovite Mica

Spm Based Lithography for Nanometer Scale Electrodes Fabrication

1999 ◽  
Vol 584 ◽  
Author(s):  
A. Notargiacomo ◽  
E. Giovine ◽  
E. Cianci ◽  
V. Foglietti ◽  
F. Evangelisti
Keyword(s):  
Atomic Force Microscope ◽  
Material Removal ◽  
Low Cost ◽  
Metal Electrode ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Quantum Devices ◽  
Positioning Accuracy ◽  
Atomic Force ◽  
Local Oxidation

AbstractScanning probe assisted nanolithography is a very attractive technique in terms of low-cost, patterning resolution and positioning accuracy. Our approach makes use of a commercial atomic force microscope and silicon probes to build simple nanostructures, such as metal electrode pairs, for application in novel quantum devices.Sub-100 nm patterning was successfully performed using three different techniques: direct material removal, scanning probe assisted mask patterning and local oxidation.

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