scholarly journals Fabrication of sharp atomic force microscope probes using in situ local electric field induced deposition under ambient conditions

2016 ◽  
Vol 87 (11) ◽  
pp. 113703 ◽  
Author(s):  
Alexei Temiryazev ◽  
Sergey I. Bozhko ◽  
A. Edward Robinson ◽  
Marina Temiryazeva
Keyword(s):  
Electric Field ◽  
Atomic Force Microscope ◽  
Local Electric Field ◽  
Ambient Conditions ◽  
Atomic Force

scholarly journals Nanopipette/Nanorod-Combined Quartz Tuning Fork–Atomic Force Microscope

Sensors ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 1794 ◽  
Author(s):  
Sangmin An ◽  
Wonho Jhe
Keyword(s):  
Atomic Force Microscope ◽  
Tuning Fork ◽  
High Sensitivity ◽  
Quartz Tuning Fork ◽  
Force Sensor ◽  
Au Nanoparticle ◽  
Ambient Conditions ◽  
Atomic Force ◽  
In Situ Detection

We introduce a nanopipette/quartz tuning fork (QTF)–atomic force microscope (AFM) for nanolithography and a nanorod/QTF–AFM for nanoscratching with in situ detection of shear dynamics during performance. Capillary-condensed nanoscale water meniscus-mediated and electric field-assisted small-volume liquid ejection and nanolithography in ambient conditions are performed at a low bias voltage (~10 V) via a nanopipette/QTF–AFM. We produce and analyze Au nanoparticle-aggregated nanowire by using nanomeniscus-based particle stacking via a nanopipette/QTF–AFM. In addition, we perform a nanoscratching technique using in situ detection of the mechanical interactions of shear dynamics via a nanorod/QTF–AFM with force sensor capability and high sensitivity.

Fabrication of Semiconductor Nanostructures With an Atomic Force Microscope

1995 ◽  
Vol 380 ◽  
Author(s):  
E. S. Snow ◽  
P. M. Campbell
Keyword(s):  
Electric Field ◽  
Atomic Force Microscope ◽  
Semiconductor Nanostructures ◽  
Selective Etching ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Local Electric Field ◽  
Nanometer Scale ◽  
Atomic Force ◽  
Resolution Limits

ABSTRACTAn AFM-based nanolithography process is described. We employ the local electric field of a metal-coated AFM tip which is operated in air to selectively oxidize regions of a H-passivated Si surface. The resulting oxide, ∼ 3 nm thick, is used as a mask for selective etching of the unoxidized regions of Si. This AFM-based fabrication process is fast, reliable, simple to perform and is well suited for device fabrication. We apply this technique to the fabrication of Si and GaAs nanostructures, as well as to the fabrication of a nanometer-scale Si side-gated transistor. In addition, we discuss the ultimate resolution limits of the technique.

Transport in Thermal Dip Pen Nanolithography

2004 ◽  
Author(s):  
Brent A. Nelson ◽  
Tanya L. Wright ◽  
William P. King ◽  
Paul E. Sheehan ◽  
Lloyd J. Whitman
Keyword(s):  
Electron Beam ◽  
Atomic Force Microscope ◽  
Electron Beam Lithography ◽  
Room Temperature ◽  
Optical Lithography ◽  
Ambient Conditions ◽  
Atomic Force ◽  
Resolution Limits ◽  
Dip Pen Nanolithography

The manufacture of nanoscale devices is at present constrained by the resolution limits of optical lithography and the high cost of electron beam lithography. Furthermore, traditional silicon fabrication techniques are quite limited in materials compatibility and are not well-suited for the manufacture of organic and biological devices. One nanomanufacturing technique that could overcome these drawbacks is dip pen nanolithography (DPN), in which a chemical-coated atomic force microscope (AFM) tip deposits molecular ‘inks’ onto a substrate [1]. DPN has shown resolution as good as 5 nm [2] and has been performed with a large number of molecules, but has limitations. For molecules to ink the surface they must be mobile at room temperature, limiting the inks that can be used, and since the inks must be mobile in ambient conditions, there is no way to stop the deposition while the tip is in contact with the substrate. In-situ imaging of deposited molecules therefore causes contamination of the deposited features.

Anin situatomic force microscope for normal-incidence nanofocus X-ray experiments

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscope ◽  
High Speed ◽  
Normal Incidence ◽  
Organic Thin Film ◽  
X Ray ◽  
Atomic Force ◽  
Synchrotron Beamlines

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.

scholarly journals In situ observation of streptavidin-biotin binding on an immunoassay well surface using an atomic force microscope

FEBS Letters ◽  
1996 ◽  
Vol 390 (2) ◽  
pp. 161-164 ◽  
Author(s):  
S. Allen ◽  
J. Davies ◽  
A.C. Dawkes ◽  
M.C. Davies ◽  
J.C. Edwards ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
In Situ Observation ◽  
Atomic Force ◽  
Biotin Binding

Chromic Polydiacetylene Single Crystals: Atomic Force Microscopy Studies

1995 ◽  
Vol 413 ◽  
Author(s):  
V. Shivshankar ◽  
C. Sung ◽  
J. Kumar ◽  
S. K. Tripathy ◽  
D. J. Sandman
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystals ◽  
Ambient Conditions ◽  
Free Standing ◽  
Force Microscopy ◽  
Sensor Performance ◽  
Atomic Force ◽  
Variable Surface

ABSTRACTWe have studied the surface morphology of free standing single crystals of thermochromic polydiacetylenes (PDAs), namely, ETCD and IPUDO (respectively, the ethyl and isopropyl urethanes of 5,7-dodecadiyn-1,12-diol), by Atomic Force Microscopy (AFM) under ambient conditions. Micron scale as well as molecularly resolved images were obtained. The micron scale images indicate a variable surface, and the molecularly resolved images show a well defined 2-D lattice that is interpreted in terms of molecular models and known crystallographic data. Thereby information about surface morphology, which is crucial to potential optical device or chromic sensor performance is available. We also report the observation of a “macroscopic shattering” of the IPUDO monomer crystal during in-situ UV polymerization studies.

scholarly journals Atomic force microscope with an adjustable probe direction and piezoresistive cantilevers operated in tapping-mode / Im Tapping-Modus betriebenes Rasterkraftmikroskop mit einstellbarer Antastrichtung und piezoresistiven Cantilevern

2019 ◽  
Vol 86 (s1) ◽  
pp. 12-16
Author(s):  
Janik Schaude ◽  
Julius Albrecht ◽  
Ute Klöpzig ◽  
Andreas C. Gröschl ◽  
Tino Hausotte
Keyword(s):  
Atomic Force Microscope ◽  
Metrological Traceability ◽  
Step Height ◽  
Tapping Mode ◽  
Atomic Force ◽  
In Situ Calibration ◽  
Measuring Machine ◽  
Piezoresistive Cantilevers

AbstractThis article presents a new tilting atomic force microscope (AFM) with an adjustable probe direction and piezoresistive cantilever operated in tapping-mode. The AFM is based on two rotational axes, which enable the adjustment of the probe direction to cover a complete hemisphere. The whole setup is integrated into a nano measuring machine (NMM-1) and the metrological traceability of the piezoresistive cantilever is warranted by in situ calibration on the NMM-1. To demonstrate the capabilities of the tilting AFM, measurements were conducted on a step height standard.

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