Etched Shape Control of Single‐Crystal Silicon in Reactive Ion Etching Using Chlorine

1987 ◽  
Vol 134 (11) ◽  
pp. 2856-2862 ◽  
Author(s):  
Masaaki Sato ◽  
Yoshinobu Arita
Keyword(s):  
Single Crystal ◽  
Shape Control ◽  
Reactive Ion Etching ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Ion Etching

Dependence Of Silicon Fracture Strength And Surface Morphology On Deep Reactive Ion Etching Parameters

1998 ◽  
Vol 546 ◽  
Author(s):  
Kuo-Shen Chen ◽  
Arturo A. Ayon ◽  
Kevin A. Lohner ◽  
Mark A. Kepets ◽  
Terran K. Melconian ◽  
...  
Keyword(s):  
Mechanical Testing ◽  
Turbine Blades ◽  
Reactive Ion Etching ◽  
High Stress ◽  
Single Crystal Silicon ◽  
Sem Analysis ◽  
Material Strength ◽  
Crystal Silicon ◽  
Ion Etching ◽  
Deep Reactive Ion Etching

AbstractThe development of a high power-density micro-gas turbine engine is currently underway at MIT. The initial goal is to produce the components by deep reactive ion etching (DRIE) single crystal silicon. The capability of the silicon structures to withstand the very high stress levels within the engine limits the performance of the device. This capability is determined by the material strength and by the achievable fillet radii at the root of turbine blades and other etched features rotating at high speeds. These factors are strongly dependent on the DRIE parameters. Etching conditions that yield large fillet radii and good surface quality are desirable from a mechanical standpoint. In order to identify optimal DRIE conditions, a mechanical testing program has been implemented. The designed experiment involves a matrix of 55 silicon wafers with radiused hub flexure specimens etched under different DRIE conditions. The resulting fracture strengths were determined through mechanical testing, while SEM analysis was used to characterize the corresponding fillet radii. The test results will provide the basis for process optimization of micro-turbomachinery fabrication and play an important role in the overall engine redesign.

Process Characterization of a Load-Locked, Reactive Ion Etching System

1984 ◽  
Vol 38 ◽  
Author(s):  
Margaret M. Hendriks ◽  
S. Shanfield
Keyword(s):  
Reactive Ion Etching ◽  
Single Crystal Silicon ◽  
Chamber Pressure ◽  
Crystal Silicon ◽  
Ion Etching ◽  
Process Characterization ◽  
Profile Control ◽  
Wall Profile ◽  
Etching System

AbstractWe report on process characterization of contact hole etching in a load-locked, hexa-gonal reactive ion etching system. Contact holes were etched in silicon dioxide and phos-phosilicate glass (PSG) with emphasis on wall profile control and selectivity to the underlayer of either single crystal silicon, polysilicon, or aluminum.To achieve these requirements, a two stage etch process was developed. In the first stage, controlled wall taper is obtained with a mixture of CHF3 and O2. The second stage utilizes a mixture of CHF3 and a small amount of CO2 to obtain high selectivity to the underlying material. Evaluation of the effects of chamber pressure, RF power, and gas mixture on taper angle, selectivity, resist erosion, and etch rates is presented.In addition, evidence which suggests that the reproducibility of optimum etch condi-tions can be enhanced by the use of a continuously pumped process chamber will be dis-cussed.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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