scholarly journals Process Characterization of the Reactive-Ion Etching of Borosilicate Glass for Microfluidic Channels

2010 ◽  
Author(s):  
Ann Christine Huang
Keyword(s):  
Borosilicate Glass ◽  
Reactive Ion Etching ◽  
Microfluidic Channels ◽  
Ion Etching ◽  
Process Characterization

Process Characterization of a Load-Locked, Reactive Ion Etching System

1984 ◽  
Vol 38 ◽  
Author(s):  
Margaret M. Hendriks ◽  
S. Shanfield
Keyword(s):  
Reactive Ion Etching ◽  
Single Crystal Silicon ◽  
Chamber Pressure ◽  
Crystal Silicon ◽  
Ion Etching ◽  
Process Characterization ◽  
Profile Control ◽  
Wall Profile ◽  
Etching System

AbstractWe report on process characterization of contact hole etching in a load-locked, hexa-gonal reactive ion etching system. Contact holes were etched in silicon dioxide and phos-phosilicate glass (PSG) with emphasis on wall profile control and selectivity to the underlayer of either single crystal silicon, polysilicon, or aluminum.To achieve these requirements, a two stage etch process was developed. In the first stage, controlled wall taper is obtained with a mixture of CHF3 and O2. The second stage utilizes a mixture of CHF3 and a small amount of CO2 to obtain high selectivity to the underlying material. Evaluation of the effects of chamber pressure, RF power, and gas mixture on taper angle, selectivity, resist erosion, and etch rates is presented.In addition, evidence which suggests that the reproducibility of optimum etch condi-tions can be enhanced by the use of a continuously pumped process chamber will be dis-cussed.

Reactive ion etching characterization of a-SiC: H in CF4/O2 plasma

1995 ◽  
Vol 29 (1-3) ◽  
pp. 176-180 ◽  
Author(s):  
G. Saggio ◽  
E. Verona ◽  
P. Di Rosa ◽  
S. La Monica ◽  
R. Salotti ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
O2 Plasma

Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

2000 ◽  
Vol 29 (6) ◽  
pp. 837-840 ◽  
Author(s):  
J. Antoszewski ◽  
C. A. Musca ◽  
J. M. Dell ◽  
L. Faraone
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
P Type

Characterization of reactive ion etching of sol-gel SiO 2 using Taguchi optimization method

1999 ◽  
Author(s):  
Terence C. Wee ◽  
Boon Siew Ooi ◽  
Yan Zhou ◽  
Yuen Chuen Chan ◽  
Yee Loy Lam
Keyword(s):  
Sol Gel ◽  
Reactive Ion Etching ◽  
Optimization Method ◽  
Taguchi Optimization ◽  
Ion Etching ◽  
Taguchi Optimization Method

Damage characterization of anisotropic InP patterns obtained by SiCl4 reactive ion etching

1999 ◽  
Vol 46 (1-4) ◽  
pp. 331-334 ◽  
Author(s):  
L. Manin-Ferlazzo ◽  
F. Carcenac ◽  
R. Teissier ◽  
G. Faini ◽  
D. Mailly
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Damage Characterization
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