Dependence Of Silicon Fracture Strength And Surface Morphology On Deep Reactive Ion Etching Parameters

1998 ◽  
Vol 546 ◽  
Author(s):  
Kuo-Shen Chen ◽  
Arturo A. Ayon ◽  
Kevin A. Lohner ◽  
Mark A. Kepets ◽  
Terran K. Melconian ◽  
...  

AbstractThe development of a high power-density micro-gas turbine engine is currently underway at MIT. The initial goal is to produce the components by deep reactive ion etching (DRIE) single crystal silicon. The capability of the silicon structures to withstand the very high stress levels within the engine limits the performance of the device. This capability is determined by the material strength and by the achievable fillet radii at the root of turbine blades and other etched features rotating at high speeds. These factors are strongly dependent on the DRIE parameters. Etching conditions that yield large fillet radii and good surface quality are desirable from a mechanical standpoint. In order to identify optimal DRIE conditions, a mechanical testing program has been implemented. The designed experiment involves a matrix of 55 silicon wafers with radiused hub flexure specimens etched under different DRIE conditions. The resulting fracture strengths were determined through mechanical testing, while SEM analysis was used to characterize the corresponding fillet radii. The test results will provide the basis for process optimization of micro-turbomachinery fabrication and play an important role in the overall engine redesign.

2006 ◽  
Vol 527-529 ◽  
pp. 1115-1118 ◽  
Author(s):  
Laura J. Evans ◽  
Glenn M. Beheim

High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR ≤1) deep (>100 *m) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR up to 13) deep (>100 *m) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.


1984 ◽  
Vol 38 ◽  
Author(s):  
Margaret M. Hendriks ◽  
S. Shanfield

AbstractWe report on process characterization of contact hole etching in a load-locked, hexa-gonal reactive ion etching system. Contact holes were etched in silicon dioxide and phos-phosilicate glass (PSG) with emphasis on wall profile control and selectivity to the underlayer of either single crystal silicon, polysilicon, or aluminum.To achieve these requirements, a two stage etch process was developed. In the first stage, controlled wall taper is obtained with a mixture of CHF3 and O2. The second stage utilizes a mixture of CHF3 and a small amount of CO2 to obtain high selectivity to the underlying material. Evaluation of the effects of chamber pressure, RF power, and gas mixture on taper angle, selectivity, resist erosion, and etch rates is presented.In addition, evidence which suggests that the reproducibility of optimum etch condi-tions can be enhanced by the use of a continuously pumped process chamber will be dis-cussed.


2011 ◽  
Vol 21 (10) ◽  
pp. 105001
Author(s):  
Ahmet Erten ◽  
Milan Makale ◽  
Xuekun Lu ◽  
Bernd Fruhberger ◽  
Santosh Kesari ◽  
...  

2017 ◽  
Vol 9 (27) ◽  
pp. 23263-23263
Author(s):  
Bryan W. K. Woo ◽  
Shannon C. Gott ◽  
Ryan A. Peck ◽  
Dong Yan ◽  
Mathias W. Rommelfanger ◽  
...  

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