Effects of SiH2Cl2 Addition on the Growth Mechanism of Si Films Prepared by Photochemical Vapor Deposition

1995 ◽  
Vol 377 ◽  
Author(s):  
T. Oshima ◽  
K. Yamaguchi ◽  
K. Abe ◽  
A. Yamada ◽  
M. Konagai ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Flat Surface ◽  
Defect Density ◽  
Atomic Force ◽  
Amorphous Si ◽  
Si Epitaxy ◽  
Si Films ◽  
Photochemical Vapor Deposition

ABSTRACTEffects of SiH2Cl2 and H2 addition to SiH4 on photochemical vapor deposition (photo-CVD) of amorphous Si (a-Si) and epitaxial Si films were investigated, and roles of Cl and H in the growth mechanism were discussed. The surface morphology and the defect density of the obtained a-Si films were evaluated by atomic force microscope (AFM), and constant photocurrent method (CPM), respectively. It was found that the H2 dilution of SiH4 is effective to prepare the a-Si films with smooth surfaces and low defect density. Furthermore, nearly flat surface with the root mean square (RMS) of the roughness of 0.35nm was obtained by the SiH2Cl2 addition to H2-diluted SiH4. In the Si epitaxy, the SiH2Cl2 addition is also efficient to improve the film quality. It is suggested that the growing surface is terminated by both Cl and H, and the surface is more stable than that terminated by only H. Therefore, the diffusion on the growing surface of the film precursors such as SiH3 is enhanced, resulting in the improvement of the surface morphology and the film quality.

Surface morphology of as grown and annealed bulk GaN crystals

1996 ◽  
Vol 1 ◽  
Author(s):  
G. Nowak ◽  
S. Krukowski ◽  
I. Grzegory ◽  
S. Porowski ◽  
Jacek M. Baranowski ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Flat Surface ◽  
Hydrogen Atmosphere ◽  
The Other ◽  
Crystal Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Flat Side ◽  
Bulk Gan ◽  
Atomically Flat

GaN single crystals have been grown from Ga solution. The crystals grow in the form of platelets with their basal plane perpendicular to the c-axis. The two opposite crystal surfaces are not equivalent since one is N- and the other Ga-terminated. Atomic force microscopy has been applied to study surface morphology on both surfaces. It was found that one side is atomically flat. The other side consists of pyramid-like structures about 25 nm in size.The influence of annealing in an NH3+H2 atmosphere in the temperature range from 600°C to 900°C was investigated. Depending on crystal face the results were drastically different. It was found that on the rough side, annealing yields an atomically flat surface with terraces of monolayer height. The size of the terraces depends on the temperature of the annealing. On the originally flat side the surface becomes rougher after annealing. The transformation of surface morphology begins at temperatures below 700°C. Preliminary results of annealing in a hydrogen atmosphere are also reported. These findings are crucial for the understanding and development of GaN homoepitaxy.

Surface Cusp Formation in Si Homoepitaxy

2004 ◽  
Vol 832 ◽  
Author(s):  
J.-M. Baribeau ◽  
X. Wu ◽  
M. Beaulieu ◽  
D.J. Lockwood ◽  
N.L. Rowell
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Surface Density ◽  
Growth Direction ◽  
Low Energy ◽  
Large Area ◽  
Columnar Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Si Films

ABSTRACTWe report a study of the surface morphology and microstructure of Si epitaxial layers grown by MBE on (001) Si at temperatures at which epitaxy breakdown is observed. For films grown in the 400 - 450 °C temperature range the epitaxy breakdown is very sluggish and characterized by a columnar growth and the formation of surface cusps. We have used atomic force microscopy to study the shape, size and distribution of those surface cusps. Surface cusps are of square shape with sides predominantly oriented along <110> directions and are typically of 50 nm size and 5 nm depth. The cusps can be very regular in size and their surface density (typically of 109-1010 cm-2) is dependent on the growth temperature. The epitaxial Si in this temperature regime exhibits a residual strain of the order of -5 × 10−5 in the growth direction. Photoluminescence (PL) from cusped Si films is characterized by a broad PL at low energy possibly due to impurities incorporation at low growth temperatures. We have observed that Ge self-assembled dots can be grown on cusped surfaces. Large area AFM measurements reveal that surface cusps are “decorated” by clusters of large dome-like Ge dots, while a lower density of smaller dome and pyramid shape islands are seen away from the cusps.

Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy by photochemical vapor deposition

1994 ◽  
Vol 79-80 ◽  
pp. 215-219 ◽  
Author(s):  
Takayuki Oshima ◽  
Masashi Sano ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Si Epitaxy ◽  
Photochemical Vapor Deposition

Characterization and PL Properties of Ge-Induced Crystallization of a-Si Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 366 ◽  
pp. 99-102 ◽  
Author(s):  
Kun Yong Kang ◽  
Shu Kang Deng ◽  
Rui Ting Hao ◽  
De Cong Li
Keyword(s):  
Magnetron Sputtering ◽  
Growth Temperature ◽  
Atomic Force ◽  
Result Show ◽  
Spectrum Band ◽  
Amorphous Si ◽  
Pl Spectrum ◽  
Si Films ◽  
Induced Crystallization

In this paper, we present the characterization of Ge-induced crystallization of amorphous Si (a-Si) films deposited by magnetron sputtering. The film structures of a-Si films were characterized by Raman spectroscopy, Atomic Force microscope (AFM), and field emission scanning electron microscope (FESEM). The result show that 60% of a-si film with a layer of 400 nm Ge buried is crystallized at growth temperature of 800 °C. The surface roughness and average surface grain size obtained by AFM is 2.39 nm and 60 nm for the crystallized film, respectively. The films growth at temperature of 500°C and 650 °C shows a PL spectrum band from 1.6 eV to 1.8 eV, and the PL peak shifts to lower energy as the growth temperature increased. As for the film grown at 800 °C, the PL spectrum is nearly extinguished. The crystallization of a-Si film induced by buried Ge might be a useful technology to develop high quality poly-Si film without annealing.

Uniform, High Performance Poly-Si TFTs Fabricated by Laser- Crystallization of PECVD-Grown a-SI:H

2000 ◽  
Vol 621 ◽  
Author(s):  
D. Toet ◽  
T.W. Sigmon ◽  
T. Takehara ◽  
C.C. Tsai ◽  
W.R. Harshbarger
Keyword(s):  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Chemical Vapor ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Partial Melt ◽  
Amorphous Si ◽  
Average Size ◽  
Si Films

ABSTRACTPolycrystalline silicon thin film transistors (TFTs) were fabricated using laser crystallization of thin amorphous Si films grown by plasma-enhanced chemical vapor deposition. The films were exposed to a scanned XeCl excimer laser beam at 350 mJ/cm2. At this fluence the Si film com- pletely melted and crystallized in the form of uniformly distributed grains with an average size of 39 nm. One of the films was then subjected to a low fluence laser scan (250 mJ/cm2), which re- sulted in the melting of the top part of the film and lead to an increase in grain size. The TFTs fabricated without the partial melt method had good electrical properties and uniformities. The partial melt method lead to substantial improvements in most device characteristics, while the uniformity remained good.

Sign in / Sign up

Export Citation Format

Share Document