Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

F. C. Voogt; R. Ishihara; F. D. Tichelaar

doi:10.1063/1.1642286

Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

Journal of Applied Physics ◽

10.1063/1.1642286 ◽

2004 ◽

Vol 95 (5) ◽

pp. 2873-2879 ◽

Cited By ~ 29

Author(s):

F. C. Voogt ◽

R. Ishihara ◽

F. D. Tichelaar

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Crystallization Behavior ◽

Laser Annealing ◽

Chemical Vapor ◽

Excimer Laser Annealing ◽

Pressure Chemical ◽

Amorphous Si ◽

Si Films ◽

Melting And Crystallization

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Crystallization of amorphous Si films formed by chemical vapor deposition

Journal of Vacuum Science and Technology ◽

10.1116/1.569304 ◽

1977 ◽

Vol 14 (1) ◽

pp. 54-56 ◽

Cited By ~ 34

Author(s):

Naoyuki Nagasima ◽

Nagiko Kubota

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Amorphous Si ◽

Si Films

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Excimer Laser Annealing Effects of Silicon-Rich Silicon Nitride Films Prepared by Using Catalytic Chemical Vapor Deposition

ECS Meeting Abstracts ◽

10.1149/ma2009-02/27/2228 ◽

2009 ◽

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Excimer Laser ◽

Vapor Deposition ◽

Laser Annealing ◽

Chemical Vapor ◽

Excimer Laser Annealing ◽

Catalytic Chemical Vapor Deposition ◽

Silicon Nitride Films ◽

Annealing Effects

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Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si2H6

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.37-38.305 ◽

1994 ◽

Vol 37-38 ◽

pp. 305-310 ◽

Cited By ~ 1

Author(s):

E. Campo ◽

J.P. Guillemet ◽

J.J. Pedroviejo ◽

B. Legros-de Mauduit ◽

E. Scheid

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Si Films

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Columnar growth of ultra-thin nanocrystalline Si films on quartz by Low Pressure Chemical Vapor Deposition: accurate control of vertical size

physica status solidi (a) ◽

10.1002/pssa.200880224 ◽

2008 ◽

Vol 205 (11) ◽

pp. 2615-2620 ◽

Cited By ~ 12

Author(s):

Ch. B. Lioutas ◽

N. Vouroutzis ◽

I. Tsiaoussis ◽

N. Frangis ◽

S. Gardelis ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Columnar Growth ◽

Pressure Chemical ◽

Si Films ◽

Vertical Size ◽

Nanocrystalline Si

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Observation of normal Hall coefficient of amorphous Si thin films prepared by low-pressure chemical-vapor deposition

Physical Review B ◽

10.1103/physrevb.41.1251 ◽

1990 ◽

Vol 41 (2) ◽

pp. 1251-1253 ◽

Cited By ~ 14

Author(s):

N. Du ◽

Y. T. Zhu ◽

B. Y. Tong ◽

S. K. Wong

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Hall Coefficient ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Amorphous Si

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Crystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor Deposition

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.37-38.293 ◽

1994 ◽

Vol 37-38 ◽

pp. 293-298 ◽

Cited By ~ 6

Author(s):

J.P. Guillemet ◽

Bernard Pieraggi ◽

B. Legros-de Mauduit ◽

A. Claverie

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Crystallisation Behaviour ◽

Pressure Chemical ◽

Si Films

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Excimer Laser Annealing Effects of Silicon-rich Silicon Nitride Films Prepared by Using Catalytic Chemical Vapor Deposition

ECS Transactions ◽

10.1149/1.3237018 ◽

2019 ◽

Vol 25 (10) ◽

pp. 111-116 ◽

Cited By ~ 2

Author(s):

Kyoung-Min Lee ◽

Jae-Dam Hwang ◽

Youn-Jin Lee ◽

Sun-Jae Kim ◽

Min-Koo Han ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Excimer Laser ◽

Vapor Deposition ◽

Laser Annealing ◽

Chemical Vapor ◽

Excimer Laser Annealing ◽

Catalytic Chemical Vapor Deposition ◽

Silicon Nitride Films ◽

Annealing Effects

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Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantation

Thin Solid Films ◽

10.1016/s0040-6090(99)00420-4 ◽

1999 ◽

Vol 353 (1-2) ◽

pp. 274-282 ◽

Cited By ~ 2

Author(s):

Peng-Shiu Chen ◽

T.E. Hsieh ◽

Chih-Hsun Chu

Keyword(s):

Chemical Vapor Deposition ◽

Ion Implantation ◽

Vapor Deposition ◽

Solid Phase ◽

Chemical Vapor ◽

Low Pressure ◽

Solid Phase Epitaxy ◽

Pressure Chemical ◽

Si Films

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Excimer laser annealing of ferroelectric SrBi2Ta2O9 thin films prepared by metal organic chemical vapor deposition

10.1117/12.596405 ◽

2004 ◽

Author(s):

Satoko Kato ◽

Kyohei Funatsu ◽

Osamu Kato ◽

Shoji Kanazawa ◽

Kazuya Sano

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Excimer Laser ◽

Vapor Deposition ◽

Laser Annealing ◽

Chemical Vapor ◽

Organic Chemical ◽

Excimer Laser Annealing ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Epitaxial crystallization during 600 °C furnace annealing of amorphous Si layer deposited by low-pressure chemical-vapor-deposition and irradiated with 1-MeV Xe ions

Journal of Applied Physics ◽

10.1063/1.365571 ◽

1997 ◽

Vol 82 (11) ◽

pp. 5446-5459 ◽

Cited By ~ 8

Author(s):

Jyoji Nakata

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Furnace Annealing ◽

Epitaxial Crystallization ◽

Pressure Chemical ◽

Amorphous Si

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