Crystallization of amorphous Si films formed by chemical vapor deposition

1977 ◽  
Vol 14 (1) ◽  
pp. 54-56 ◽  
Author(s):  
Naoyuki Nagasima ◽  
Nagiko Kubota
2006 ◽  
Vol 510-511 ◽  
pp. 954-957
Author(s):  
Myung Beom Park ◽  
Jae Hyun Shim ◽  
Nam Hee Cho

Hydrogenated amorphous Si (a-Si:H) films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques, and the effect of nano-structure on the photoluminescence (PL) phenomena of the films was investigated. The films, which were prepared at R.T., contain both amorphous and crystalline phases of 1 ~ 3 nm size nano-crystallites with {100} orientation preference while the films prepared at 500°C are composed of about 6 nm and 150 nm size crystallites. The former exhibit a strong PL intensity near blue light region, while the latter exhibiting little PL phenomena; also, the optical band gap of the former was calculated at 4.2 eV.


2010 ◽  
Vol 107 (4) ◽  
pp. 043503 ◽  
Author(s):  
I. Crupi ◽  
S. Mirabella ◽  
D. D’Angelo ◽  
S. Gibilisco ◽  
A. Grasso ◽  
...  

2016 ◽  
Vol 108 (19) ◽  
pp. 193105 ◽  
Author(s):  
G. Lupina ◽  
C. Strobel ◽  
J. Dabrowski ◽  
G. Lippert ◽  
J. Kitzmann ◽  
...  

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