Reaction kinetics in synchrotron‐radiation‐excited Si epitaxy with disilane. II. Photochemical‐vapor deposition

1995 ◽  
Vol 78 (4) ◽  
pp. 2740-2750 ◽  
Author(s):  
Housei Akazawa ◽  
Yuichi Utsumi
Keyword(s):  
Synchrotron Radiation ◽  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Si Epitaxy ◽  
Photochemical Vapor Deposition

Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy by photochemical vapor deposition

1994 ◽  
Vol 79-80 ◽  
pp. 215-219 ◽  
Author(s):  
Takayuki Oshima ◽  
Masashi Sano ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Si Epitaxy ◽  
Photochemical Vapor Deposition

Effects of SiH2Cl2 Addition on the Growth Mechanism of Si Films Prepared by Photochemical Vapor Deposition

1995 ◽  
Vol 377 ◽  
Author(s):  
T. Oshima ◽  
K. Yamaguchi ◽  
K. Abe ◽  
A. Yamada ◽  
M. Konagai ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Flat Surface ◽  
Defect Density ◽  
Atomic Force ◽  
Amorphous Si ◽  
Si Epitaxy ◽  
Si Films ◽  
Photochemical Vapor Deposition

ABSTRACTEffects of SiH2Cl2 and H2 addition to SiH4 on photochemical vapor deposition (photo-CVD) of amorphous Si (a-Si) and epitaxial Si films were investigated, and roles of Cl and H in the growth mechanism were discussed. The surface morphology and the defect density of the obtained a-Si films were evaluated by atomic force microscope (AFM), and constant photocurrent method (CPM), respectively. It was found that the H2 dilution of SiH4 is effective to prepare the a-Si films with smooth surfaces and low defect density. Furthermore, nearly flat surface with the root mean square (RMS) of the roughness of 0.35nm was obtained by the SiH2Cl2 addition to H2-diluted SiH4. In the Si epitaxy, the SiH2Cl2 addition is also efficient to improve the film quality. It is suggested that the growing surface is terminated by both Cl and H, and the surface is more stable than that terminated by only H. Therefore, the diffusion on the growing surface of the film precursors such as SiH3 is enhanced, resulting in the improvement of the surface morphology and the film quality.

Synchrotron‐radiation photochemical‐vapor deposition of amorphous carbon

1995 ◽  
Vol 77 (7) ◽  
pp. 3453-3457 ◽  
Author(s):  
A. Endo ◽  
S. Takami ◽  
T. Osawa ◽  
I. Honma ◽  
H. Komiyama
Keyword(s):  
Synchrotron Radiation ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Photochemical Vapor Deposition

Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with $\bf SiH_{2}Cl_{2}$

1994 ◽  
Vol 33 (Part 2, No. 2A) ◽  
pp. L153-L155 ◽  
Author(s):  
Takayuki Oshima ◽  
Juan Carlos Alonso ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Low Temperature Si Epitaxy ◽  
Si Epitaxy ◽  
Photochemical Vapor Deposition

scholarly journals Kinetics of 1- and 2-methylallyl + O2 reaction, investigated by photoionisation using synchrotron radiation

2021 ◽  
Author(s):  
Domenik Schleier ◽  
Engelbert Reusch ◽  
Marius Gerlach ◽  
Tobias Preitschopf ◽  
Deb Pratim Mukhopadhyay ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Reaction Kinetics ◽  
Molecular Oxygen ◽  
Light Source ◽  
Storage Ring ◽  
Vacuum Ultraviolet ◽  
Flow Tube ◽  
Tube Reactor ◽  
Swiss Light Source ◽  
Kinetics Of

The reaction kinetics of the isomers of the methylallyl radical with molecular oxygen has been studied in a flow tube reactor at the vacuum ultraviolet (VUV) beamline of the Swiss Light Source storage ring.

Preparation and properties of microcrystalline silicon films using photochemical vapor deposition

1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui
Keyword(s):  
Vapor Deposition ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Photochemical Vapor Deposition

Photochemical vapor deposition of titaniumdiboride

1990 ◽  
Vol 46 (1-4) ◽  
pp. 215-219 ◽  
Author(s):  
J. Elders ◽  
D. Bebelaar ◽  
J.D.W. van Voorst
Keyword(s):  
Vapor Deposition ◽  
Photochemical Vapor Deposition
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