Schottky Barrier Heights at Singe Crystal Metal Semiconductor Interfaces

1984 ◽  
Vol 37 ◽  
Author(s):  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Ultrahigh Vacuum ◽  
Interface Structure ◽  
Electrical Behavior ◽  
Atomic Structures ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Theoretical Investigations

AbstractElectrical behavior at single crystal silicide-silicon interfaces was studied. Schottky barrier heights were determined for epitaxial NiSi2 and CoSi2 layers grown under ultrahigh vacuum conditions on (111), (100) and (110) surfaces of Si. A dependence of Schottky barrier heights on interface structure was observed. These results favor intrinsic mechanisms for Schottky barrier formation. The advantages of having homogeneous metal-semiconductor interfaces for the study of Schottky barrier mechanisms are pointed out. In particular, the present epitaxial silicide-silicon interfaces represent ideal candidates for detailed theoretical investigations based on experimentally obtained atomic structures.

Electrical Properties and Schottky Barriers of Metal-Semiconductor Interfaces

1990 ◽  
Vol 181 ◽  
Author(s):  
M.O. Aboelfotoh
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Indirect Band Gap ◽  
P Type

ABSTRACTThe electrical properties of metal/Si(100) and metal/Ge(100) interfaces formed by the deposition of metal on both n-type and p-type Si(100) and Ge(100) have been studied in the temperature range 77-295 K with the use of current- and capacitance-voltage techniques. Compound formation is found to have very little or no effect on the Schottky-barrier height and its temperature dependence. For silicon, the barrier height and its temperature dependence are found to be affected by the metal. For germanium, on the other hand, the barrier height and its temperature dependence are unaffected by the metal. The temperature dependence of the Si and Ge barrier heights is found to deviate from the predictions of recent models of Schottky-barrier formation based on the suggestion of Fermi-level pinning in the center of the semiconductor indirect band gap.

Electron Transport Through Epitaxial Metal/Semiconductor Heterostructures

1986 ◽  
Vol 77 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
J. M. Gibson ◽  
M. Anzlowar ◽  
...  
Keyword(s):  
Electron Transport ◽  
Schottky Barrier ◽  
Semiconductor Heterostructures ◽  
Perfect Single Crystal ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Semiconductor Contacts ◽  
First Time ◽  
Silicon Heterostructures

ABSTRACTAbrupt, epitaxial silicide/silicon heterostructures may be grown so that, for the first time, the physics of electron transport across near perfect, single crystal, metal/semiconductor interfaces may be probed experimentally. Transport measurements through type-A and -B oriented NiSi2 layers on Si(111) substrates have revealed Schottky barrier heights differing by 140 meV. In this paper we present results of experiments designed to explore the possible role of bulk and interface defects in determining the potential barrier at these near ideal epitaxial metal-semiconductor contacts. We have found little evidence for the presence of defects and the Schottky barrier is insensitive to details of the microscopic interfacial perfection. By contrast we find that both the electrical quality and magnitude of the barrier occurring at the NiSi2 /Si(100) heterojunction are dependent upon details of the microscopic interfacial perfection.

Single Crystal NiSi2/Si Interfaces: Fabrication, Structures, and Schottky Barrier Heights

1991 ◽  
Vol 221 ◽  
Author(s):  
R. T. Tung ◽  
J. P. Sullivan ◽  
F. Schrey ◽  
A. F. J. Levi
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Barrier Heights

On the Interface Structure of Buried CoSi2/Si(001) Layers and their Respective Schottky Barrier Heights

1993 ◽  
Vol 320 ◽  
Author(s):  
P. Wemer ◽  
W. Jäger ◽  
A. Schüppen
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Schottky Barrier ◽  
Interface Structure ◽  
Planar Interface ◽  
High Dose ◽  
Barrier Heights ◽  
Transmission Electron ◽  
Interface Structures ◽  
Atomic Interface

ABSTRACTThis paper describes a high-resolution transmission electron microscope (HRTEM) study of the morphology and the atomic structure of CoSi2/Si(001) interfaces of continuous buried sulicide layers. These layers were produced by high-dose Co+ ion implantation and subsequent rapid thermal annealing. Planar interface regions of high perfection with domains of different atomic interface structure, and interface steps, frequently with I 111)I facets, were observed. There were significant differences in the interface structure between the upper and lower interfaces. Measuring Schottky barrier heights (SBH's) revealed different values for the upper (0.67eV) and lower (0.78eV) CoSi2/n-Si(001) interfaces. Possible correlations between the atomic interface structures and the resulting electronic properties are discussed.

Electrical Properties of Epitaxial Silicide-Silicon Interfaces

1985 ◽  
Vol 54 ◽  
Author(s):  
R. T. Tung ◽  
A. F. J. Levi ◽  
J. M. Gibson ◽  
K. K. Ng ◽  
A. Chantre
Keyword(s):  
Fermi Level ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Surface Region ◽  
Ideal Behavior ◽  
Near Surface ◽  
Barrier Heights ◽  
Transmission Electron ◽  
Current Voltage ◽  
P Type

ABSTRACTThe Schottky barrier heights of single crystal NiSi2 layers on Si(111) have been studied by current-voltage, capacitance-voltage and activation energy techniques. Near ideal behavior is found for Schottky barriers grown on substrates cleaned at ∼820°C in ultrahigh vacuum. The Fermi level positions at the interfaces of single crystal type A and type B NiSi2 are shown to differ by ∼0.14 eV. Transmission electron microscopy demonstrated the epitaxial perfection of these suicide layers. At a cleaning temperature of 1050° C, the near surface region of lightly doped n-type Si was converted to p-type. The presence of a p-n junction was directly revealed by spreading resistance measurements and resulted in a high apparent Schottky barrier height (≥0.75 eV) which no longer bears immediate relationship to the interface Fermi level position.

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