Single Crystal NiSi2/Si Interfaces: Fabrication, Structures, and Schottky Barrier Heights

1991 ◽  
Vol 221 ◽  
Author(s):  
R. T. Tung ◽  
J. P. Sullivan ◽  
F. Schrey ◽  
A. F. J. Levi
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Barrier Heights

Electrical Properties of Epitaxial Silicide-Silicon Interfaces

1985 ◽  
Vol 54 ◽  
Author(s):  
R. T. Tung ◽  
A. F. J. Levi ◽  
J. M. Gibson ◽  
K. K. Ng ◽  
A. Chantre
Keyword(s):  
Fermi Level ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Surface Region ◽  
Ideal Behavior ◽  
Near Surface ◽  
Barrier Heights ◽  
Transmission Electron ◽  
Current Voltage ◽  
P Type

ABSTRACTThe Schottky barrier heights of single crystal NiSi2 layers on Si(111) have been studied by current-voltage, capacitance-voltage and activation energy techniques. Near ideal behavior is found for Schottky barriers grown on substrates cleaned at ∼820°C in ultrahigh vacuum. The Fermi level positions at the interfaces of single crystal type A and type B NiSi2 are shown to differ by ∼0.14 eV. Transmission electron microscopy demonstrated the epitaxial perfection of these suicide layers. At a cleaning temperature of 1050° C, the near surface region of lightly doped n-type Si was converted to p-type. The presence of a p-n junction was directly revealed by spreading resistance measurements and resulted in a high apparent Schottky barrier height (≥0.75 eV) which no longer bears immediate relationship to the interface Fermi level position.

Schottky Barrier Heights at Singe Crystal Metal Semiconductor Interfaces

1984 ◽  
Vol 37 ◽  
Author(s):  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Ultrahigh Vacuum ◽  
Interface Structure ◽  
Electrical Behavior ◽  
Atomic Structures ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Theoretical Investigations

AbstractElectrical behavior at single crystal silicide-silicon interfaces was studied. Schottky barrier heights were determined for epitaxial NiSi2 and CoSi2 layers grown under ultrahigh vacuum conditions on (111), (100) and (110) surfaces of Si. A dependence of Schottky barrier heights on interface structure was observed. These results favor intrinsic mechanisms for Schottky barrier formation. The advantages of having homogeneous metal-semiconductor interfaces for the study of Schottky barrier mechanisms are pointed out. In particular, the present epitaxial silicide-silicon interfaces represent ideal candidates for detailed theoretical investigations based on experimentally obtained atomic structures.

Oxygen stabilization of molecular beam epitaxial Al‐GaAs Schottky barrier heights

1982 ◽  
Vol 53 (6) ◽  
pp. 4521-4523 ◽  
Author(s):  
K. Okamoto ◽  
C. E. C. Wood ◽  
L. Rathbun ◽  
L. F. Eastman
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Barrier Heights

scholarly journals Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation

2005 ◽  
Vol 86 (6) ◽  
pp. 062108 ◽  
Author(s):  
Q. T. Zhao ◽  
U. Breuer ◽  
E. Rije ◽  
St. Lenk ◽  
S. Mantl
Keyword(s):  
Schottky Barrier ◽  
Sulfur Segregation ◽  
Barrier Heights

Schottky barrier heights of epitaxial Ni–silicides on Si(111)

1986 ◽  
Vol 4 (3) ◽  
pp. 855-859 ◽  
Author(s):  
M. Liehr ◽  
P. E. Schmid ◽  
F. K. LeGoues ◽  
P. S. Ho
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
Ni Silicides

scholarly journals Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces

2021 ◽  
Vol 129 (17) ◽  
pp. 175304
Author(s):  
Jiaqi Chen ◽  
Zhaofu Zhang ◽  
Yuzheng Guo ◽  
John Robertson
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
Free Metal

Diamond Schottky barrier diodes on half-inch single-crystal wafers fabricated by Minimal Fab System

2019 ◽  
Author(s):  
T. Hanada ◽  
H. Umezawa ◽  
S. Ohmagari ◽  
D. Takeuchi ◽  
J.Higedon Kaneko
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes
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