Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces

1984 ◽  
Vol 52 (6) ◽  
pp. 461-464 ◽  
Author(s):  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Semiconductor Interfaces ◽  
Barrier Formation

Schottky Barrier Heights at Singe Crystal Metal Semiconductor Interfaces

1984 ◽  
Vol 37 ◽  
Author(s):  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Ultrahigh Vacuum ◽  
Interface Structure ◽  
Electrical Behavior ◽  
Atomic Structures ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Theoretical Investigations

AbstractElectrical behavior at single crystal silicide-silicon interfaces was studied. Schottky barrier heights were determined for epitaxial NiSi2 and CoSi2 layers grown under ultrahigh vacuum conditions on (111), (100) and (110) surfaces of Si. A dependence of Schottky barrier heights on interface structure was observed. These results favor intrinsic mechanisms for Schottky barrier formation. The advantages of having homogeneous metal-semiconductor interfaces for the study of Schottky barrier mechanisms are pointed out. In particular, the present epitaxial silicide-silicon interfaces represent ideal candidates for detailed theoretical investigations based on experimentally obtained atomic structures.

Electrical Properties and Schottky Barriers of Metal-Semiconductor Interfaces

1990 ◽  
Vol 181 ◽  
Author(s):  
M.O. Aboelfotoh
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Indirect Band Gap ◽  
P Type

ABSTRACTThe electrical properties of metal/Si(100) and metal/Ge(100) interfaces formed by the deposition of metal on both n-type and p-type Si(100) and Ge(100) have been studied in the temperature range 77-295 K with the use of current- and capacitance-voltage techniques. Compound formation is found to have very little or no effect on the Schottky-barrier height and its temperature dependence. For silicon, the barrier height and its temperature dependence are found to be affected by the metal. For germanium, on the other hand, the barrier height and its temperature dependence are unaffected by the metal. The temperature dependence of the Si and Ge barrier heights is found to deviate from the predictions of recent models of Schottky-barrier formation based on the suggestion of Fermi-level pinning in the center of the semiconductor indirect band gap.

Metal-Semiconductor Interfaces with Novel Structural and Electrical Properties: Metal Cluster Deposition

1989 ◽  
Vol 148 ◽  
Author(s):  
G.D. Waddill ◽  
I.M. Vitomirov ◽  
C.M. Aldao ◽  
Steven G. Anderson ◽  
C. Capasso ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Structural Changes ◽  
Metal Cluster ◽  
Substrate Surface ◽  
Point Of View ◽  
Compound Formation ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Fundamental Point ◽  
Structural And Electrical Properties

Studies of Schottky barrier formation at metal-semiconductor interfaces have been complicated by the difficulty of producing an abrupt, “ideal” interface. The commonly used methods of producing metal-semiconductor interfaces result in complex interfacial morphology and chemistry including substrate disruption, atomic interdiffusion, alloy or compound formation, and substrate surface structural changes. The complicated nature of such interfaces makes it difficult from a fundamental point of view to identify the mechanisms dominating Schottky barrier formation for the various stages of development.

MACROSCOPIC PROPERTIES AND SCHOTTKY BARRIER FORMATION AT SILICIDE-SILICON INTERFACES

1987 ◽  
Vol 01 (03) ◽  
pp. 119-127
Author(s):  
PAUL S. HO
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Interface States ◽  
Nickel Silicide ◽  
Current Understanding ◽  
Significant Progress ◽  
Barrier Formation ◽  
Macroscopic Properties

This paper reviews the current understanding of the microscopic properties of silicide-silicon interfaces pertaining to the formation of Schottky barrier. Significant progress has been accomplished, including the preparation of single-crystal silicide interfaces and the observation of interface states. Some important issues remain unresolved, such as the disagreement on the epitaxial nickel silicide barriers and the origin of interface states.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

1991 ◽  
Vol 58 (20) ◽  
pp. 2243-2245 ◽  
Author(s):  
Masao Yamada ◽  
Anita K. Wahi ◽  
Paul L. Meissner ◽  
Alberto Herrera‐Gomez ◽  
Tom Kendelewicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation
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