Dynamic Modelling of CVD for Real-Time Control of Microstructure

1994 ◽  
Vol 363 ◽  
Author(s):  
M.A. Gevelber ◽  
M.T. Quiñones ◽  
M.L. Bufano
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nonlinear Dynamic ◽  
Control Structure ◽  
Dynamic Modelling ◽  
Chemical Vapor ◽  
Real Time Control ◽  
Nonlinear Dynamic Model ◽  
Time Control ◽  
Insight Into

AbstractA nonlinear dynamic model of the chemical vapor deposition (CVD) process has been developed and analyzed to obtain insight into the design of an appropriate control structure.

Diamond growth on thin Ti wafers via chemical vapor deposition

1995 ◽  
Vol 10 (11) ◽  
pp. 2685-2688 ◽  
Author(s):  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Titanium Substrate ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Diamond Growth ◽  
X Ray ◽  
Hot Filament ◽  
Insight Into

Diamond film was synthesized on thin Ti wafers (as thin as 40 μm) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis.

Dynamic Modeling Analysis for Control of Chemical Vapor Deposition

1998 ◽  
Vol 120 (2) ◽  
pp. 164-169 ◽  
Author(s):  
M. A. Gevelber ◽  
M. Bufano ◽  
M. Toledo-Quin˜ones
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Control Volume ◽  
Chemical Vapor ◽  
Nonlinear Dynamic Model ◽  
Loop Control ◽  
Closed Loop Control System ◽  
Loop Control System ◽  
Fluid Transients ◽  
Variable Equation

A nonlinear dynamic model of the chemical vapor deposition (CVD) process has been developed to aid design of a closed-loop control system. A lumped control volume analysis is used to capture important mass and fluid transients and spatial affects, while a simplified single variable equation is used to represent the complex reaction chemistry. Steady-state experimental results and model predictions are compared and the control implications of the process dynamics are discussed.

New Insight into the Metal-Catalyst-Free Direct Chemical Vapor Deposition Growth of Graphene on Silicon Substrates

2021 ◽  
Vol 125 (3) ◽  
pp. 1774-1783
Author(s):  
Afzal Khan ◽  
Mohammad Rezwan Habib ◽  
Cong Jingkun ◽  
Mingsheng Xu ◽  
Deren Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Silicon Substrates ◽  
Chemical Vapor Deposition Growth ◽  
Catalyst Free ◽  
Insight Into

scholarly journals Analyses of the surface parameters in polycrystalline diamonds

2020 ◽  
Vol 17 (1) ◽  
pp. 111-129
Author(s):  
Sandra Veljkovic ◽  
Vojislav Mitic ◽  
Vesna Paunovic ◽  
Goran Lazovic ◽  
Markus Mohr ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Structure ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Polycrystalline Films ◽  
Surface Parameters ◽  
Insight Into

There is a progressing interests for polycrystalline diamonds and they have been more extensively used recently. This area has been intensively researched due to the outstanding potential of this material, and this necessitated presenting some of the latest application related to engineering in this paper. A better insight of polycrystalline diamonds properties can be achieved by intensively researching the surface structure. Samples of nanocrystalline diamonds grown by the chemical vapor deposition method are analyzed and accordingly, the focus of the research was the surface parameters and their structure. It is observed that waviness and texture are unique for any direction, their values are almost the same for the chosen directions and they vary approximately from -0.2 nm to 0.4 nm. Analyses of the parameters allowed a more detailed insight into the morphology of the surfaces of polycrystalline films.

Integrated Vapor Phase Cleaning and Pure no Nitridation for Gate Stack Formation

1997 ◽  
Vol 470 ◽  
Author(s):  
F. Glowacki ◽  
B. Froeschle ◽  
L. Deutschmann ◽  
I. Sagnes ◽  
D. Laviale ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Phase ◽  
Vapor Deposition ◽  
Process Development ◽  
Chemical Vapor ◽  
Gate Stack ◽  
Wafer Processing ◽  
First Time ◽  
Cluster Tool ◽  
Insight Into

ABSTRACTThe purpose of this publication is to give an insight into process development performed in two modules which belong to a cluster tool designed for the gate stack process sequence of cleaning, gate oxidation, and polysilicon chemical vapor deposition. For the first time, following the hardware and software MESC-based standards, two suppliers have integrated complementary modules to build a cluster tool. This equipment answers the demands of the 1C Manufacturers and follows the “best of breed” approach. Four single wafer rapid thermal process chambers, a Vapor Phase Cleaning (VPC) and a Rapid Thermal Oxidation/Nitridation (RTO/N) module from STEAG-AST Elektronik, a polysilicon and a nitride chemical vapor deposition module from ASM International are currently connected together to prove the feasibility of the single wafer processing gate stack cluster tool.

Sign in / Sign up

Export Citation Format

Share Document