New Insight into the Metal-Catalyst-Free Direct Chemical Vapor Deposition Growth of Graphene on Silicon Substrates

2021 ◽  
Vol 125 (3) ◽  
pp. 1774-1783
Author(s):  
Afzal Khan ◽  
Mohammad Rezwan Habib ◽  
Cong Jingkun ◽  
Mingsheng Xu ◽  
Deren Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Silicon Substrates ◽  
Chemical Vapor Deposition Growth ◽  
Catalyst Free ◽  
Insight Into

Catalyst-Free Metal-Organic Chemical Vapor Deposition Growth of InN Nanorods

2012 ◽  
Vol 12 (2) ◽  
pp. 1645-1648
Author(s):  
Min Hwa Kim ◽  
Kunook Chung ◽  
Dae Young Moon ◽  
Jong-Myeong Jeon ◽  
Miyoung Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Growth ◽  
Catalyst Free ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Free Metal

scholarly journals Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (53) ◽  
pp. 33185-33193 ◽  
Author(s):  
Shan Zheng ◽  
Guofang Zhong ◽  
Xingyi Wu ◽  
Lorenzo D'Arsiè ◽  
John Robertson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Gas Mixture ◽  
Catalyst Free ◽  
Free Growth ◽  
Insulating Substrates

We study the metal-catalyst-free growth of uniform and continuous graphene on different insulating substrates by microwave plasma-enhanced chemical vapor deposition (PECVD) with a gas mixture of C2H2, NH3, and H2 at a temperature of 700–750 °C.

scholarly journals Graphitized hollow carbon spheres and yolk-structured carbon spheres fabricated by metal-catalyst-free chemical vapor deposition

Carbon ◽  
2016 ◽  
Vol 101 ◽  
pp. 57-61 ◽  
Author(s):  
Xufan Li ◽  
Miaofang Chi ◽  
Shannon M. Mahurin ◽  
Rui Liu ◽  
Yen-Jun Chuang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Carbon Spheres ◽  
Catalyst Free ◽  
Hollow Carbon ◽  
Hollow Carbon Spheres

Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates

MRS Advances ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 289-294 ◽  
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Bart Van Zeghbroeck
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Charge Carrier Density ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Hot Filament

ABSTRACTFor the first time, we are reporting the growth of high quality single crystalline 3C-SiC epitaxially on hexagonal silicon carbide substrates using Hot Filament Chemical Vapor Deposition (HF-CVD) on full 4” wafers. Rocking curve X-Ray diffraction (XRD) measurements resulted in a full width at half maximum (FWHM) as low as 88 arcsec for a 40 µm thick layer. We achieved this quality using a carefully optimized process making use of the additional degrees of freedom the hot filaments create. The filaments allow for precursor pre-cracking and a tuning of the vertical thermal gradient, which creates an improved thermal field compared to conventional Chemical Vapor Deposition. Growth rates of up to 8 µm/h were achieved with standard silane and propane chemistry, and further increased to 20 µm/h with chlorinated chemistry. The use of silicon carbide substrates promises superior layer quality compared to silicon substrates due to their better match in lattice parameters and thermal expansion coefficients. High resolution scanning electron microscopy, X-Ray rocking measurements, and micro-Raman allow us to assess the crystalline quality of our material and to compare it to layers grown on low-cost silicon substrates. Hall measurements reveal a linear increase of the charge carrier density in the material with the flow of nitrogen gas as a dopant. Electron densities above 10-18 cm-3 have been reached.

The transition metal surface passivated edges of hexagonal boron nitride (h-BN) and the mechanism of h-BN's chemical vapor deposition (CVD) growth

2015 ◽  
Vol 17 (43) ◽  
pp. 29327-29334 ◽  
Author(s):  
Ruiqi Zhao ◽  
Feifei Li ◽  
Zhirong Liu ◽  
Zhongfan Liu ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Metal Surface ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Chemical Vapor Deposition Growth ◽  
Transition Metal Surface ◽  
Cvd Growth

The kinetics of chemical vapor deposition growth of h-BN on a transition metal catalyst surface is dominated by the metal surface passivated edge structures.

Metal-catalyst-free growth of carbon nanotubes/carbon nanofibers on carbon blacks using chemical vapor deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (76) ◽  
pp. 40251-40258 ◽  
Author(s):  
Zhi-Yan Zeng ◽  
Jarrn-Horng Lin
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Carbon Black ◽  
Carbon Nanofibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Thermal Chemical Vapor Deposition ◽  
Catalyst Free ◽  
Free Growth

Carbon black can act as catalysts to grow carbon nanotubes or carbon nanofibers through a metal-catalyst-free thermal chemical vapor deposition.

Chemical vapor deposition growth and characterization of AlGaN nanowires

2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth
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