Dynamic Modeling Analysis for Control of Chemical Vapor Deposition

1998 ◽  
Vol 120 (2) ◽  
pp. 164-169 ◽  
Author(s):  
M. A. Gevelber ◽  
M. Bufano ◽  
M. Toledo-Quin˜ones
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Control Volume ◽  
Chemical Vapor ◽  
Nonlinear Dynamic Model ◽  
Loop Control ◽  
Closed Loop Control System ◽  
Loop Control System ◽  
Fluid Transients ◽  
Variable Equation

A nonlinear dynamic model of the chemical vapor deposition (CVD) process has been developed to aid design of a closed-loop control system. A lumped control volume analysis is used to capture important mass and fluid transients and spatial affects, while a simplified single variable equation is used to represent the complex reaction chemistry. Steady-state experimental results and model predictions are compared and the control implications of the process dynamics are discussed.

scholarly journals Closed-loop control of laser assisted chemical vapor deposition growth of carbon nanotubes

2012 ◽  
Vol 112 (3) ◽  
pp. 034904 ◽  
Author(s):  
Yoeri van de Burgt ◽  
Yves Bellouard ◽  
Rajesh Mandamparambil ◽  
Miro Haluska ◽  
Andreas Dietzel
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Closed Loop ◽  
Chemical Vapor ◽  
Closed Loop Control ◽  
Chemical Vapor Deposition Growth ◽  
Loop Control

Dynamic Modelling of CVD for Real-Time Control of Microstructure

1994 ◽  
Vol 363 ◽  
Author(s):  
M.A. Gevelber ◽  
M.T. Quiñones ◽  
M.L. Bufano
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nonlinear Dynamic ◽  
Control Structure ◽  
Dynamic Modelling ◽  
Chemical Vapor ◽  
Real Time Control ◽  
Nonlinear Dynamic Model ◽  
Time Control ◽  
Insight Into

AbstractA nonlinear dynamic model of the chemical vapor deposition (CVD) process has been developed and analyzed to obtain insight into the design of an appropriate control structure.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers

Microstructure of Carbon Film Deposited Using Hot-Filament Chemical Vapor Deposition

2015 ◽  
Vol 48 (6) ◽  
pp. 104-109
Author(s):  
Youn-Joon Baik ◽  
Do-Hyun Kwon ◽  
Jong-Keuk Park ◽  
Wook-Seong Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Hot Filament
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