An Insight into Grain Refinement Mechanism of Ultrananocrystalline Diamond Films Obtained by Direct Current Plasma-Assisted Chemical Vapor Deposition

2014 ◽  
Vol 11 (5) ◽  
pp. 437-447
Author(s):  
Hak-Joo Lee ◽  
Jung-Min Cho ◽  
Inho Kim ◽  
Seung-Cheol Lee ◽  
Jong-Keuk Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Grain Refinement ◽  
Direct Current ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Ultrananocrystalline Diamond ◽  
Direct Current Plasma ◽  
Refinement Mechanism ◽  
Insight Into

Highly conductive nitrogen-doped ultrananocrystalline diamond films with enhanced field emission properties: triethylamine as a new nitrogen source

2016 ◽  
Vol 4 (21) ◽  
pp. 4778-4785 ◽  
Author(s):  
Wen Yuan ◽  
Liping Fang ◽  
Zhen Feng ◽  
Zexiang Chen ◽  
Jianwu Wen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Nitrogen Source ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Nitrogen Doped ◽  
Field Emission Properties ◽  
Ultrananocrystalline Diamond

In this study, triethylamine (TEA) dissolved in the methanol was used as a liquid nitrogen source to synthesize nitrogen-doped ultrananocrystalline diamond (N-UNCD) films on silicon substrates via microwave plasma enhanced chemical vapor deposition (MPCVD).

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