Low Temperature Formation of β-SiC by C60Deposition on Silicon

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
High Vacuum ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Growth Defects ◽  
Atomic Force ◽  
Deposition Parameters ◽  
Mean Size ◽  
Sic Films

ABSTRACTBy deposition of C60 on silicon at moderate temperatures (800°C … 900°C) the formation of thin epitaxial β-SiC-films on Si could be proved. C60 -molecules were deposited onto Si(001) and Si(111) in high-vacuum at constant deposition rates for some hours. The thickness and the composition of the formed layers are determined by Rutherford-Backscattering (RBS). The thickness of the layers varied between about 50nm and 200nm in dependence of the deposition parameters. From the shape of the RBS-spectra only β-SiC can be identified. SiC-grains with a mean size of about 500 nm have been observed by atomic force microscopy (AFM). X-ray diffraction (XRD) pole figure measurements demonstrate the heteroepitaxial growth of β-SiC on Si It can be shown by XRD that only the cubic structure (β-SiC) of the different polytypes of SiC was formed during the carbonization process. The formation of growth defects (twins) can be observed.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

Optical Characteristic and Application of CH3NH3PbI3 Thin Film in Schottky Diode

2016 ◽  
Vol 848 ◽  
pp. 440-445
Author(s):  
Liang Chen ◽  
Jin Xiang Deng ◽  
Hong Li Gao ◽  
Qian Qian Yang ◽  
Le Kong ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Schottky Diodes ◽  
High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dual Source ◽  
Voltage Region

CH3NH3PbI3 thin film was deposited by a dual-source evaporation system under high vacuum (∼10−4 Pa). The crystallographic phase was analyzed by X-ray diffraction and confirmed as the perovskite structure. The optical properties of the thin film have been investigated in the spectral range 300-1800 nm. The analysis of the absorption coefficient () reveals direct allowed transition with corresponding energy 1.58 eV. The surface morphology of the film was characterized by atomic force microscopy (AFM). The observed features exhibited by CH3NH3PbI3 give a vital chance to explore its application for various optoelectronic devices. To see its other potential utility, Al/CH3NH3PbI3 /ITO Schottky diodes were fabricated. Based on the analyzing the I-V measurement for the Al/CH3NH3PbI3/ ITO device, the basic device parameters such as barrier height and ideality factor were determined. At the low-voltage region, the current conduction in the device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions.

Growth of 3C-SiC on Si Molds for MEMS Applications

2006 ◽  
Vol 527-529 ◽  
pp. 307-310 ◽  
Author(s):  
M. Reyes ◽  
M. Waits ◽  
S. Harvey ◽  
Y. Shishkin ◽  
Bruce Geil ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Growth Rate ◽  
Growth Process ◽  
Secondary Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sic Films

A hetero-epitaxial 3C-SiC growth process in a low-pressure hot-wall CVD reactor has been developed on planar Si (100) substrates. The growth rate achieved for this process was about 10 μm/h. The process consists of silane/propane/hydrogen chemistry with HCl used as a growth additive to increase the growth rate. 3C-SiC has also been grown on 22, 52 and 123 +m deep etched MEMS structures formed by DRIE of (100) Si at a rate of about 8 +m/h. Secondary electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) were used to analyze the quality of the 3C-SiC films.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Low Molecular Weight Microfibers with Light Sensing Properties

2017 ◽  
Vol 54 (4) ◽  
pp. 655-658
Author(s):  
Andrei Bejan ◽  
Dragos Peptanariu ◽  
Bogdan Chiricuta ◽  
Elena Bicu ◽  
Dalila Belei
Keyword(s):  
Molecular Weight ◽  
Low Molecular Weight ◽  
X Ray Diffraction ◽  
Aromatic Rings ◽  
X Ray ◽  
Force Microscopy ◽  
Light Sensing ◽  
Sensing Applications ◽  
Atomic Force ◽  
Low Molecular Weight Compounds

Microfibers were obtained from organic low molecular weight compounds based on heteroaromatic and aromatic rings connected by aliphatic spacers. The obtaining of microfibers was proved by scanning electron microscopy. The deciphering of the mechanism of microfiber formation has been elucidated by X-ray diffraction, infrared spectroscopy, and atomic force microscopy measurements. By exciting with light of different wavelength, florescence microscopy revealed a specific optical response, recommending these materials for light sensing applications.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

Lateral Size of Self-Patterned Nanostructures Controlled by Multi-Step Deposition

2005 ◽  
Vol 106 ◽  
pp. 117-122 ◽  
Author(s):  
Izabela Szafraniak ◽  
Dietrich Hesse ◽  
Marin Alexe
Keyword(s):  
Electron Microscopy ◽  
Ultrathin Films ◽  
Lateral Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Non Volatile Memory ◽  
Ferroelectric Capacitors ◽  
Scanning Electron

Self-patterning presents an appealing alternative to lithography for the production of arrays of nanoscale ferroelectric capacitors for use in high density non-volatile memory devices. Recently a self-patterning method, based on the use of the instability of ultrathin films during hightemperature treatments, was used to fabricate nanosized ferroelectrics. This paper reports the use of the method for the preparation of PZT nanoislands on different single crystalline substrates - SrTiO3, MgO and LaAlO3. Moreover, a multi-step deposition procedure in order to control lateral the dimension of the crystals was introduced. The nanostructures obtained were studied by atomic force microscopy, scanning electron microscopy and X-ray diffraction.

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