Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region

To date, most studies focus on complex designs to realize offset cancelation characteristics in nonvolatile flip-flops (NV-FFs). However, complex designs using switches are ineffective for offset cancelation in the near/subthreshold voltage region because switches become critical contributors to the offset voltage. To address this problem, this paper proposes a novel cross-coupled NMOS-based sensing circuit (CCN-SC) capable of improving the restore yield, based on the concept that the simplest is the best, of an NV-FF operating in the near/subthreshold voltage region. Measurement results using a 65 nm test chip demonstrate that with the proposed CCN-SC, the restore yield is increased by more than 25 times at a supply voltage of 0.35 V, compared to that with a cross-coupled inverter-based SC, at the cost of 18× higher power consumption.

Analysis of State-of-the-Art Spin-Transfer-Torque Nonvolatile Flip-Flops Considering Restore Yield in the Near/Sub-Threshold Voltage Region

Recently, the leakage power consumption of Internet of Things (IoT) devices has become a main issue to be tackled, due to the fact that the scaling of process technology increases the leakage current in the IoT devices having limited battery capacity, resulting in the reduction of battery lifetime. The most effective method to extend the battery lifetime is to shut-off the device during standby mode. For this reason, spin-transfer-torque magnetic-tunnel-junction (STT-MTJ) based nonvolatile flip-flop (NVFF) is being considered as a strong candidate to store the computing data. Since there is a risk that the MTJ resistance may change during the read operation (i.e., the read disturbance problem), NVFF should consider the read disturbance problem to satisfy reliable data restoration. To date, several NVFFs have been proposed. Even though they satisfy the target restore yield of 4σ, most of them do not take the read disturbance into account. Furthermore, several recently proposed NVFFs which focus on the offset-cancellation technique to improve the restore yield have obvious limitation with decreasing the supply voltage (VDD), because the offset-cancellation technique uses switch operation in the critical path that can exacerbate the restore yield in the near/sub-threshold region. In this regard, this paper analyzes state-of-the-art STT-MTJ based NVFFs with respect to the voltage region and provides insight that a simple circuit having no offset-cancellation technique could achieve a better restore yield in the near/sub-threshold voltage region. Monte–Carlo HSPICE simulation results, using industry-compatible 28 nm model parameters, show that in case of VDD of 0.6 V, complex NVFF circuits having offset tolerance characteristic have a better restore yield, whereas in case of VDD of 0.4 V with sizing up strategy, a simple NVFF circuit having no offset tolerance characteristic has a better restore yield.

Structural elucidation of the degradation mechanism of nickel-rich layered cathodes during high-voltage cycling

A splitting of two O3 phases, rather than the often observed O1 phases in the conventional LiCoO2 electrode, was discovered in the LiNi0.85Co0.10Mn0.05O2 at high-voltage region (>4.6 V) by in situ high-resolution synchrotron radiation diffraction.

Electrical Characterization of CIGS Thin Film Solar Cells by Two and Four-Wires Probe Technique

The characterization of thin-film solar cells is of huge importance for obtaining high open-circuit voltage and low recombination rates from the interfaces or within the bulk of the main materials. Among the many electrical characterization techniques, the two- and four-wire probe using the Cascade instrument is of interest since the resistance of the wires, and the electrical contacts can be excluded by the additional two wires in 4-wire probe configuration. In this paper, both two and four-point probes configuration are employed to characterize the CIGS chalcogenide thin-film solar cells. The two-wire probe has been used to measure the current-voltage characteristics of the cell which results in a huge internal resistance. Therefore, the four-wire connection is also used to eliminate the lead resistance to enhance the characterization’s accuracy. The load resistance in the two-wire probe diminishes the photogenerated current density at smaller voltage ranges. In contrast, the proposed four-wire probe collects more current at higher voltages due to enhanced carrier collection efficiency from contact electrodes. The current conduction mechanism is also identified at every voltage region represented by the value of the ideality factor of that voltage region. It is observed that a long time given to the charge collection results in increased current density at a higher voltage. According to the results and device characteristics, a novel double-diode model is suggested to extract the saturation current density, shunt and series resistances and the ideality factor of the cells. These cells are shown to be efficient in terms of low recombination at the interfaces and with lower series resistance as the quality of the materials is in its most possible conductive form. The measured internal resistance and saturation current density and ideality factor of the two measurement configuration is measured and compared.