High-Quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Baba ◽  
T. Matsuyama ◽  
T. Sawada ◽  
T. Takahama ◽  
K. Wakisaka ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Silicon Film ◽  
Columnar Structure ◽  
High Electron ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
Crystallization Method ◽  
First Time ◽  
Polycrystalline Silicon Film

ABSTRACTWe succeeded, for the first time, in depositing a silicon film which features 1000Å-wide single-crystalline grains embedded in a matrix of amorphous tissue. The deposition was done by plasma-enhanced CVD from silane diluted with hydrogen at a considerably high temperature (550°C). 5pm-thick undoped amorphous silicon film was deposited on the above film and was crystallized by a solid phase crystallization method. The polycrystalline silicon film which was obtained has a columnar structure and shows an extremely high electron mobility of 808 cm2/Vs.

High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method

1996 ◽  
Vol 198-200 ◽  
pp. 940-944 ◽  
Author(s):  
T. Matsuyama ◽  
N. Terada ◽  
T. Baba ◽  
T. Sawada ◽  
S. Tsuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Crystallization Method

Mechanism of Iron Gettering by Polycrystalline Silicon Film in P-Type Czochralski (CZ) Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Kamal K. Mishra
Keyword(s):  
Polycrystalline Silicon ◽  
Deep Level ◽  
Silicon Film ◽  
Iron Concentration ◽  
Transient Spectroscopy ◽  
Prolonged Heat ◽  
P Type ◽  
Oxygen Precipitates ◽  
First Time ◽  
Polycrystalline Silicon Film

AbstractIron gettering in p-type CZ silicon at 600C has been investigated using deep level transient spectroscopy(DLTS), and the surface photovoltage(SPV) method. A quantitative analysis of the gettering kinetics of iron using the polycrystalline silicon film is presented for the first time. Depth profiles of iron concentration indicated a sharp gradient in the Fe concentration near the polycrystalline silicon/substrate interface. Concurrent decrease in the minority carrier diffusion length was also observed in the same region. The majority of iron gettering from the bulk silicon was found to be associated with the enhancement of the internal gettering.The presence of small oxygen precipitates/nuclei generated by prolonged heat treatment at 600C was found to prevent regeneration of FeB pairs at the room temperature. On the other hand, large precipitates formed at lOOOC do not influence the diffusion or the recombination of Fei with B to form FeB pairs.

High-Quality Polycrystalline Silicon thin Films Prepared by Solid Phase Crystallization (Spc) Method

1992 ◽  
Vol 283 ◽  
Author(s):  
T. Matsuyama ◽  
T. Baba ◽  
M. Tanaka ◽  
S. Tsuda ◽  
H. Nishiwaki ◽  
...  
Keyword(s):  
Grain Size ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Collection Efficiency ◽  
Structural Disorder ◽  
Solid Phase Crystallization ◽  
Silicon Thin Films ◽  
Transverse Acoustic ◽  
First Time ◽  
The Relationship

ABSTRACTThe relationship between the grain size of poly-Si after SPC and the structure of a-Si before SPC was studied. The structure of a-Si was characterized by TA/TO: the Raman intensity ratio of the Transverse Acoustic (TA) like band and the Transverse Optical (TO) like band. A good positive correlation between the grain size and TS/TO was revealed for the first time. The nucleation and growth kinetics were speculated by using a thermodynamic model. The grain size could be enlarged up to 6 μ m by applying textured substrates to a-Si with a large structural disorder. This film was applied to the active layer of solar cells, and a collection efficiency of 51% at 900 nm was obtained.

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