Ultrathin textured polycrystalline oxide with a high electron conduction efficiency prepared by thermal oxidation of thin polycrystalline silicon film onn+polycrystalline silicon

1993 ◽  
Vol 62 (26) ◽  
pp. 3491-3492 ◽  
Author(s):  
Shye Lin Wu ◽  
Chung Len Lee ◽  
Tan Fu Lei
Keyword(s):  
Thermal Oxidation ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
High Electron ◽  
Electron Conduction ◽  
Thin Polycrystalline ◽  
Polycrystalline Silicon Film

High-Quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Baba ◽  
T. Matsuyama ◽  
T. Sawada ◽  
T. Takahama ◽  
K. Wakisaka ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Silicon Film ◽  
Columnar Structure ◽  
High Electron ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
Crystallization Method ◽  
First Time ◽  
Polycrystalline Silicon Film

ABSTRACTWe succeeded, for the first time, in depositing a silicon film which features 1000Å-wide single-crystalline grains embedded in a matrix of amorphous tissue. The deposition was done by plasma-enhanced CVD from silane diluted with hydrogen at a considerably high temperature (550°C). 5pm-thick undoped amorphous silicon film was deposited on the above film and was crystallized by a solid phase crystallization method. The polycrystalline silicon film which was obtained has a columnar structure and shows an extremely high electron mobility of 808 cm2/Vs.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film

1990 ◽  
Vol 29 (Part 2, No. 4) ◽  
pp. L548-L551 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Masaki Hara ◽  
Setsuo Usui
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Pulsed Laser ◽  
Polycrystalline Silicon Film

Initial stage of semiinsulating polycrystalline silicon film growth

2008 ◽  
Vol 37 (6) ◽  
pp. 349-355
Author(s):  
A. S. Turtsevich ◽  
O. Yu. Nalivaiko ◽  
V. A. Solodukha ◽  
V. V. Glukhmanchuk ◽  
N. G. Tsirkunova ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Film Growth ◽  
Silicon Film ◽  
Initial Stage ◽  
Polycrystalline Silicon Film

Laser induced implanted oxide (Ll2Ox) and polycrystalline silicon film simultaneously fabricated by excimer laser irradiation

1997 ◽  
Vol 70 (3) ◽  
pp. 372-374
Author(s):  
Cheol-Min Park ◽  
Byung-Hyuk Min ◽  
Juhn-Suk Yoo ◽  
Jae-Hong Jun ◽  
Hong-Seok Choi ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Excimer Laser Irradiation ◽  
Polycrystalline Silicon Film

Lateral reaction of polycrystalline silicon film with overlapping aluminum film

1985 ◽  
Vol 57 (4) ◽  
pp. 1143-1146 ◽  
Author(s):  
Hitoshi Arai ◽  
Shigeto Kohda ◽  
Yoshitaka Kitano
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Aluminum Film ◽  
Polycrystalline Silicon Film
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