High-Quality Polycrystalline Silicon thin Films Prepared by Solid Phase Crystallization (Spc) Method

1992 ◽  
Vol 283 ◽  
Author(s):  
T. Matsuyama ◽  
T. Baba ◽  
M. Tanaka ◽  
S. Tsuda ◽  
H. Nishiwaki ◽  
...  
Keyword(s):  
Grain Size ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Collection Efficiency ◽  
Structural Disorder ◽  
Solid Phase Crystallization ◽  
Silicon Thin Films ◽  
Transverse Acoustic ◽  
First Time ◽  
The Relationship

ABSTRACTThe relationship between the grain size of poly-Si after SPC and the structure of a-Si before SPC was studied. The structure of a-Si was characterized by TA/TO: the Raman intensity ratio of the Transverse Acoustic (TA) like band and the Transverse Optical (TO) like band. A good positive correlation between the grain size and TS/TO was revealed for the first time. The nucleation and growth kinetics were speculated by using a thermodynamic model. The grain size could be enlarged up to 6 μ m by applying textured substrates to a-Si with a large structural disorder. This film was applied to the active layer of solar cells, and a collection efficiency of 51% at 900 nm was obtained.

High-Quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Baba ◽  
T. Matsuyama ◽  
T. Sawada ◽  
T. Takahama ◽  
K. Wakisaka ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Silicon Film ◽  
Columnar Structure ◽  
High Electron ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
Crystallization Method ◽  
First Time ◽  
Polycrystalline Silicon Film

ABSTRACTWe succeeded, for the first time, in depositing a silicon film which features 1000Å-wide single-crystalline grains embedded in a matrix of amorphous tissue. The deposition was done by plasma-enhanced CVD from silane diluted with hydrogen at a considerably high temperature (550°C). 5pm-thick undoped amorphous silicon film was deposited on the above film and was crystallized by a solid phase crystallization method. The polycrystalline silicon film which was obtained has a columnar structure and shows an extremely high electron mobility of 808 cm2/Vs.

Large area polycrystalline silicon thin films grown by laser-induced nucleation and solid phase crystallization

1997 ◽  
Vol 296 (1-2) ◽  
pp. 49-52 ◽  
Author(s):  
D. Toet ◽  
B. Koopmans ◽  
R.B. Bergmann ◽  
B. Richards ◽  
P.V. Santos ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Large Area ◽  
Solid Phase Crystallization ◽  
Silicon Thin Films

Modeling the Grain Size Distribution during Solid Phase Crystallization of Silicon

2009 ◽  
Vol 1153 ◽  
Author(s):  
Andreas Bill ◽  
Anthony V Teran ◽  
Ralf B Bergmann
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Solid Phase ◽  
Good Description ◽  
Nucleation And Growth ◽  
Solid Phase Crystallization ◽  
Silicon Thin Films ◽  
Analytical Expressions ◽  
Physical Principles

AbstractWe analyze the grain size distribution during solid phase crystallization of Silicon thin films. We use a model developed recently that offers analytical expressions for the time-evolution of the grain size distribution during crystallization of a d-dimensional solid. Contrary to the usual fit of the experimental results with a lognormal distribution, the theory describes the data from basic physical principles such as nucleation and growth processes. The theory allows for a good description of the grain size distribution except for early stages of crystallization. The latter case is expected and discussed. An important outcome of the model is that the distribution at full crystallization is determined by the time-dependence of the nucleation and growth rates of grains. In the case under consideration, the theory leads to an analytical expression that has the form of a lognormal-type distribution for the fully crystallized sample.

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation
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