Luminescence Properties of Silicon Oxynitride Films

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Fischer ◽  
T. Muschik ◽  
R. Schwarz ◽  
D. Kovalev ◽  
F. Koch
Keyword(s):  
Vapour Deposition ◽  
Slow Component ◽  
Luminescence Center ◽  
Chemical Vapour ◽  
Silicon Oxynitride ◽  
Molecular Aggregate ◽  
Photoluminescence Properties ◽  
Porous Si ◽  
Decay Times ◽  
Absorption Measurements

ABSTRACTSilicon oxynitride films, deposited by chemical vapour deposition using a high He dilution are investigated with respect to their photoluminescence properties. At low temperatures the PL spectra, which show broad maxima around 2 eV, consist of two contributions with different decay times: a ns-fast and a ms-slow component, the slow one disappearing above 80 K. To account for these findings and for absorption measurements, a model is proposed to describe the structure of the samples consisting of inclusions of Si rich regions in an a-SiOxNy:H matrix with a common molecular aggregate as luminescence center. The different PL lifetimes supposedly result from different feeding mechanisms. Such a behaviour may be present in oxidized porous Si as well.

Synthesis and Photoluminescence Properties of Novel SnO2 Zigzag Nanoribbons

2010 ◽  
Vol 97-101 ◽  
pp. 4213-4216
Author(s):  
Jian Xiong Liu ◽  
Zheng Yu Wu ◽  
Guo Wen Meng ◽  
Zhao Lin Zhan
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Ceramic Boat

Novel single-crystalline SnO2 zigzag nanoribbons have been successfully synthesized by chemical vapour deposition. Sn powder in a ceramic boat covered with Si plates was heated at 1100°C in a flowing argon atmosphere to get deposits on a Si wafers. The main part of deposits is SnO2 zigzag nanoribbons. They were characterized by means of X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM observations reveal that the SnO2 zigzag nanoribbons are almost uniform, with lengths near to several hundred micrometers and have a good periodically tuned microstructure as the same zigzag angle and growth directions. Possible growth mechanism of these zigzag nanoribbons was discussed. A room temperature PL spectrum of the zigzag nanoribbons shows three peaks at 373nm, 421nm and 477nm.The novel zigzag microstructures will provide a new candidate for potential application.

Thermal evaporation synthesis of SiC/SiOx nanochain heterojunctions and their photoluminescence properties

2014 ◽  
Vol 2 (37) ◽  
pp. 7761-7767 ◽  
Author(s):  
Haitao Liu ◽  
Zhaohui Huang ◽  
Juntong Huang ◽  
Minghao Fang ◽  
Yan-gai Liu ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Thermal Evaporation ◽  
Chemical Vapour ◽  
Deposition Method ◽  
Photoluminescence Properties ◽  
Catalyst Free ◽  
Chemical Vapour Deposition Method

Chainlike SiC/SiOx heterojunctions were prepared on a silicon wafer by a simplified catalyst-free thermal chemical vapour deposition method.

Electronic Properties of Microcrystalline Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
R. Carius ◽  
F. Finger ◽  
U. Backhausen ◽  
M. Luysberg ◽  
P. Hapke ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Chemical Vapour ◽  
Structural Defects ◽  
Photoluminescence Properties ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection

ABSTRACTThe electronic and optical properties of microcrys tall ine silicon films prepared by plasma enhanced chemical vapour deposition are investigated with Hall-effect, electrical conductivity, photothermal deflection spectroscopy and photoluminescence measurements. In particular, the influence of the grain size and the crystalline volume fraction on the conductivity, the carrier density and the Hall mobility is investigated in highly doped films. A percolation model is proposed to describe the observed transport data. Photoluminescence properties were studied in un-doped films. It is proposed that the photoluminescence is due to recombination at structural defects similar to those observed in crystalline silicon.

Effect of Annealing Conditions on Photoluminescence Properties of Low-Pressure Chemical Vapour Deposition-Grown Silicon Nanocrystals

2008 ◽  
Vol 47 (1) ◽  
pp. 130-132 ◽  
Author(s):  
Konstantinos Koukos ◽  
Eléna Bedel-Pereira ◽  
Olivier Gauthier-Lafaye ◽  
Emmanuel Scheid ◽  
Laurent Bouscayrol ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Silicon Nanocrystals ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Photoluminescence Properties ◽  
Annealing Conditions ◽  
Pressure Chemical

Growth and Composition of LPCVD Silicon Oxynitride Films

1985 ◽  
Vol 48 ◽  
Author(s):  
F. H. P. M. Habraken ◽  
A. E. T. Kuiper
Keyword(s):  
Chemical Vapour Deposition ◽  
Growth Kinetics ◽  
Vapour Deposition ◽  
Ion Beam ◽  
Chemical Vapour ◽  
Deposition Process ◽  
High Energy ◽  
Silicon Oxynitride ◽  
Chemical Compositions ◽  
Pressure Chemical

ABSTRACTSilicon oxynitride films with various O/N concentration ratios were deposited in a Low Pressure Chemical Vapour Deposition process from SiH2Cl2, N2O and NH3 or ND3. The resulting films were analysed with respect to their chemical compositions using a number of high energy ion beam methods. The results of the analysis are related to the growth kinetics. It is suggested that the SiH2Cl2 decomposes more difficult on growth surfaces which contain more oxygen. The effect is attributed to the larger electronegativity of oxygen compared to nitrogen.

scholarly journals Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method

2016 ◽  
Vol 34 (4) ◽  
pp. 868-871 ◽  
Author(s):  
Wojciech Kijaszek ◽  
Waldemar Oleszkiewicz ◽  
Adrian Zakrzewski ◽  
Sergiusz Patela ◽  
Marek Tłaczała
Keyword(s):  
Optical Properties ◽  
Optical Constants ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Deposition Process ◽  
Silicon Oxynitride ◽  
Radio Frequency Plasma ◽  
Frequency Plasma ◽  
The Relationship ◽  
Deposited Film

AbstractIn this study, the authors deposited silicon oxynitride films by Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF PECVD) method. The research explores the relationship between the deposition process parameters and the optical properties of the deposited SiOxNy films. The optical constants of SiOxNy films were measured and calculated by spectroscopic ellipsometry method. Additionally, the authors investigated the possibility of controlling the deposited film composition by the flow ratio of different gaseous precursors: ammonia (NH3), diluted silane (2%SiH4/98%N2), nitrous oxide (N2O) and nitrogen (N2). The gas mixture introduced to the working chamber during the growth of the film has the influence on the Si–O and Si–N bonds formation and the ratio between these bonds determines the refractive index of the deposited film.

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