Elastic Modulus and Hardness as Derived from Nanoindentation of Ni And Mo Films Prepared by Ion Beam Assisted Deposition

1994 ◽  
Vol 356 ◽  
Author(s):  
A. Wroblewski ◽  
N. Chechenin ◽  
J. BØttiger ◽  
J. Chevallier ◽  
N. Karpe ◽  
...  
Keyword(s):  
Elastic Modulus ◽  
Ion Beam ◽  
Film Stress ◽  
Major Influence ◽  
Silicon Substrates ◽  
Nickel Films ◽  
Ion Beam Assisted Deposition ◽  
Plane Film

AbstractUsing ion beam assisted deposition, 1.5–2.2 μm thick molybdenum and nickel films were prepared on silicon substrates. Some films were found to be strongly textured. By changing the rate of Ar+ bombardment during the deposition, the resulting in-plane film stresses could be changed from being strongly tensile to strongly compressive. Using nanoindentation, the hardness and elastic modulus were measured for all films, but no major influence of the film stress or different textures could be found. The elastic modulus of the Ni films was found to be close to its polycrystalline bulk value, and that of Mo was found to be about 70% of its polycrystalline bulk value.

Thermal Annealing Behavior of Si-DLC Ibad Coatings

1996 ◽  
Vol 438 ◽  
Author(s):  
C. G. Fountzoulas ◽  
J. D. Demaree ◽  
L. C. Sengupta ◽  
J. K. Hirvonen
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Silicon Substrates ◽  
Carbon Coatings ◽  
Dlc Coatings ◽  
Annealing Behavior ◽  
Ion Beam Assisted Deposition ◽  
Disk Friction ◽  
Knoop Microhardness ◽  
Absorption Features

AbstractAmorphous, 700 nm thick, diamond-like carbon coatings containing silicon (Si-DLC), farmed by Ar+ ion beam assisted deposition (IBAD) on silicon substrates, were annealed in air at temperatures ranging from room temperature to 600°C for 30 minutes. RBS analysis showed that the composition of the films remained the same up to 200°C, but at higher temperatures the Si-DLC coatings began to oxidize at the outer surface of the coating, forming a surface layer of SiO2. After in-air annealing at 600°C the coating had been completely converted to SiO2, with no trace of carbon seen by RBS. FTIR spectra of the unannealed coatings showed a very broad mode typical of Si-DLC bonding as well as some absorption features associated with Si and SiO2. Above 200°C the transmission mode shifted to higher frequencies which may be caused by the growth of SiO2 and the decrease of the Si-DLC film thickness. The room temperature ball-on-disk friction coefficient of the coating against a 1/2′′ diameter 440 C steel ball at 1 N load ranged from 0.2 for the original coating up to 0.5 after a 100° anneal and returned to 0.2 after annealing at 200–400°C and fell to 0.12 after a 500°C exposure. The average Knoop microhardness (uncorrected for substrate effects) was 10 GPa (1,000 KHN) for coatings annealed at temperatures as high as 400°C. All coatings up to 500 °C passed the qualitative “Scotch Tape” test.

STRUCTURES AND MECHANICAL PROPERTIES OF MODULATED ZrB2/W AND ZrB2/WNx NANOMULTILAYERS

2010 ◽  
Vol 24 (01n02) ◽  
pp. 34-42 ◽  
Author(s):  
M. TAN ◽  
D. J. LI ◽  
G. Q. LIU ◽  
L. DONG ◽  
X. Y. DENG ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Elastic Modulus ◽  
Significant Contribution ◽  
Layer Structure ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Composition Modulation ◽  
Ion Beam Assisted Deposition ◽  
Xrd Patterns

ZrB 2, W , WN x coatings and ZrB 2/ W , ZrB 2/ WN x multilayered coatings have been synthesized by ion beam assisted deposition at room temperature. X-ray diffraction (XRD), XP-2 surface profiler, scanning electron microscopy (SEM) and nano indenter were employed to investigate the influence of modulation periods and N + beam bombardment on microstructure and mechanical properties of the coatings. The low-angle XRD patterns and cross-sectional SEM indicate a well-defined composition modulation and layer structure of the multilayers. The multilayers with modulation periods ranging from 9 to 16 nm without N + bombardment possessed higher hardness and elastic modulus than the rule-of-mixtures value of monolithic ZrB 2 and W coatings. The highest hardness was 24 GPa. N + bombardment to growing multilayers gave a significant contribution to mechanical property enhancement. When modulation period is 9.6 nm, ZrB 2/ WN x multilayer with 200 eV N + bombardment reveals the highest hardness (30.2 GPa) and elastic modulus. This hardest multilayer also showed the improved residual stress and fracture resistance.

Study on the internal stress in nickel films deposited onto silicon substrates by ion beam and vapor deposition (IVD)

1996 ◽  
Vol 281-282 ◽  
pp. 352-355 ◽  
Author(s):  
Naoto Kuratani ◽  
Yasuo Murakami ◽  
Osamu Imai ◽  
Akinori Ebe ◽  
Satoshi Nishiyama ◽  
...  
Keyword(s):  
Internal Stress ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Silicon Substrates ◽  
Nickel Films

Thermal Annealing Investigation of the Optical Properties of Si1-xNx Films Fabricated by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
D. Van Vechten
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Optical Filters ◽  
Beam Current ◽  
Index Of Refraction ◽  
Silicon Substrates ◽  
Atom Fraction ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Nitrogen Ion

ABSTRACTThe annealing behavior of the optical properties of silicon nitride films (Si1-xNx) is described for films fabricated by ion beam assisted deposition. The data are needed for the precise manufacture of optical filters, where the index of refraction must be predicted from deposition parameters and film annealing history.The reflection of homogeneous, amorphous samples deposited on (100) silicon substrates was measured from 500 to 3120 nm. Fits to the interference spectra were obtained over the range 1000 to 3120 nm to obtain the index of refraction vs wavelength as a function of film nitrogen content. Nitrogen atom fraction was varied from.2 to.58 by variation of the incident relative fluxes of nitrogen ion beam current to evaporant silicon flux. The films were annealed in argon at 450 C, 600 C, 750 C, and 1100 C and the measurements repeated. The systematic shifts in index of refraction with annealing temperature are described.

Microstructure and Residual Stresses in Al2O3 Prepared by Ion Beam Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
M. G. Goldiner ◽  
G. S. Was ◽  
L. J. Parfitt ◽  
J. W. Jones
Keyword(s):  
Residual Stress ◽  
Ion Beam ◽  
Arrival Rate ◽  
Film Stress ◽  
Amorphous Phases ◽  
Alumina Films ◽  
Compressive Stresses ◽  
Ion Beam Assisted Deposition ◽  
Rapid Transition ◽  
Film Porosity

ABSTRACTAlumina films synthesized by ion beam assisted deposition (EBAD) were characterized in terms of their microstructure and residual stress. Normalized energy per deposited atom, En, ranged from 0 to 130 eV/atom. The microstructure of PVD films (En=0) is a mixture of crystalline (γ-Al2O3) and amorphous phases and IBAD films are amorphous. Density and stoichiometry vary between 2.6 and 3.1 g/cm3 and 1.3 and 1.6, respectively. Neither are dependent on either ion-to-atom arrival rate ratio, R, or En. The film porosity is in the form of small (4-6 nm) voids of density 1017 - 1018 cm-3. Bombarding gas is incorporated with 80% efficiency to levels of 4-5 at. %. A tensile residual stress of 0.3 GPa exists in PVD films. A rapid transition to high compressive stresses occurs with increased En, with a saturation of -0.4 GPa occurring at high En There is a strong correlation between gas incorporation and residual film stress. However, no existing models are capable of providing a quantitative explanation of the results.

Synthesis of Al and Al2O3 Coatings by Ion Beam Assisted Deposition

1992 ◽  
Vol 268 ◽  
Author(s):  
C. E. Kalnas ◽  
L. J. Parfitt ◽  
A. Mashayekhi ◽  
J. W. Jones ◽  
G. S. Was ◽  
...  
Keyword(s):  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Arrival Rate ◽  
Columnar Structure ◽  
Fiber Texture ◽  
Film Stress ◽  
A Value ◽  
Ion Beam Assisted Deposition ◽  
R Ratio ◽  
Columnar Grains

ABSTRACTFilms of Al and Al2O3 were formed by physical vapor deposition (PVD) and ion beam assisted deposition (IBAD) onto (100) Si, glass and graphite substrates. Ion to atom arrival rate (R) ratios for IBAD varied from 0.004 to 0.1 and film thicknesses varied from 150 to 1000 nm. The O/Al ratio of oxide films and the oxygen content of Al films decreased with increasing R ratio. Al incorporation into both types of films increased with R ratio up to a value of ∼4 at% at R=0.1. Al films were crystalline with a strong (111) fiber texture becoming more pronounced with increasing R ratio. Film morphology is characterized by large columnar grains at R=0, with a breakup of the columnar structure by R=0.04. Al2O3 films are amorphous under all deposition conditions. Average film stress for PVD Al2O3 films is tensile with a value of 0.68 GPa, becoming compressive at ∼1.3 eV/atom and saturating at a value of ∼-0.65 GPa at R=0.04. Indentation experiments of Al2O3/(100)Si with a 300 g Vickers indenter showed that the changes in crack length are consistent with a model in which the residual film stress is controlling.

Titanium Nitride Formation by Low Energy Ar Ion Bombardment and UV-Light Irradiation During Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
J.W. Gerlach ◽  
H. Wengenmair ◽  
B. Stritzker ◽  
B. Rauschenbach
Keyword(s):  
Titanium Nitride ◽  
Uv Light ◽  
Ion Beam ◽  
Impurity Content ◽  
Light Irradiation ◽  
Silicon Substrates ◽  
Ion Beam Assisted Deposition ◽  
Uv Light Irradiation ◽  
Nitride Formation ◽  
Crystal Alignment

AbstractTitanium nitride films were produced by a newly developed photon and ion beam assisted deposition system (PHIBAD system). With an electron beam evaporator titanium was deposited on silicon substrates in a controlled nitrogen environment. The growing δ-TiN films were bombarded with argon ions and illuminated with UV-light. The results demonstrate that the impurity content, the nitrogen to titanium ratio of the films, the microstructure and the crystal alignment are changed using UV-light irradiation during ion assisted deposition.

Synthesis and Properties of Mo/MoSix Microlaminates Using Ion Beam Assisted Deposition

1992 ◽  
Vol 273 ◽  
Author(s):  
A. Mashayekhi ◽  
L. Parfitt ◽  
C. Kalnas ◽  
J. W. Jones ◽  
G. S. Was ◽  
...  
Keyword(s):  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Arrival Rate ◽  
Fiber Texture ◽  
Film Stress ◽  
Stress Effect ◽  
Ion Beam Assisted Deposition ◽  
Maximum Value ◽  
R Ratio ◽  
Residual Stress Effect

ABSTRACTFilms of Mo, MoSix and Mo/MoSix (1.22<x<1.35) multilayers were formed by physical vapor deposition (PVD) and ion beam assisted deposition (IBAD) onto (100) Si, glass and graphite substrates. Ion to atom arrival rate (R) ratios for IBAD varied from 0.01 to 0.1 and film thicknesses varied from 200 to 1100 nm. The Si/Mo ratio decreased with increasing R ratio. The oxygen content of Mo films was greater than silicide films, but both decreased substantially with increasing R ratio. Ar incorporation increased with increasing R ratio to a maximum of 1 at% in Mo and 5 at% in MoSi1.22. Mo films exhibit a strong (110) fiber texture at low R ratios. At the highest R ratio, a tilting of the (110) fiber texture by 15° occurs, along with the development of a distinct azimuthal texture indicative of planar channeling of the ion beam along (110) planes. The microstructure of the multilayer consists of small Mo grains and an amorphous silicide. Average film stress in Mo films increases from tension to a maximum value of 0.63 GPa and becomes compressive with increasing normalized energy. The stress in the MoSix films decreases with increasing normalized energy and saturates at a compressive stress of -0.24 GPa at 25 eV/atom. Indentation fracture experiments using a Vickers indenter with a 300 g load show a fracture behavior that is consistent with a residual stress effect for the IBAD monolithic MoSix and microlaminate, but which is influenced by additional factors in the PVD microlaminate.

scholarly journals Ion-beam Assisted Deposition of MgO with in situ RHEED Monitoring to Control Bi-axial Texture

2001 ◽  
Vol 666 ◽  
Author(s):  
James R. Groves ◽  
Paul N. Arendt ◽  
Stephen R Foltyn ◽  
Quanxi Jia ◽  
Raymond F. DePaula ◽  
...  
Keyword(s):  
Ion Beam ◽  
Grazing Incidence ◽  
High Energy ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Metallic Substrates ◽  
Mosaic Spread ◽  
Axial Texture ◽  
Ion Beam Assisted Deposition

ABSTRACTWe have studied the growth of magnesium oxide using ion-beam assisted deposition (IBAD) to achieve (100) oriented, bi-axially textured films with low mosaic spread, for film thicknesses of 10 nm on silicon substrates. We have refined the process by using reflected high-energy electron diffraction (RHEED) to monitor the growth of IBAD MgO films and found that the diffracted intensity can be used to determine (and ultimately control) final in-plane texture of the film. Here we present results on our work to develop the use of real-time RHEED monitoring to deposit well-oriented IBAD MgO films. The results have been corroborated with extensive grazing-incidence X-ray diffraction (GID). Results of these analyses have allowed us to deposit films on metallic substrates with in-plane mosaic spread less than 7°.

Sign in / Sign up

Export Citation Format

Share Document