Roles of ion irradiation for crystalline growth and internal stresses in nickel films onto silicon substrates prepared by the ion beam and vapor deposition method

1997 ◽  
Vol 15 (6) ◽  
pp. 3086-3092 ◽  
Author(s):  
Naoto Kuratani ◽  
Yasuo Murakami ◽  
Osamu Imai ◽  
Akinori Ebe ◽  
Satoshi Nishiyama ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Internal Stresses ◽  
Silicon Substrates ◽  
Deposition Method ◽  
Nickel Films ◽  
Crystalline Growth

Internal stresses in nickel films prepared by ion beam and vapor deposition

1995 ◽  
Vol 106 (1-4) ◽  
pp. 116-119 ◽  
Author(s):  
Naoto Kuratani ◽  
Yasuo Murakami ◽  
Osamu Imai ◽  
Akinori Ebe ◽  
Satoshi Nishiyama ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Ion Beam ◽  
Internal Stresses ◽  
Nickel Films

Study on the internal stress in nickel films deposited onto silicon substrates by ion beam and vapor deposition (IVD)

1996 ◽  
Vol 281-282 ◽  
pp. 352-355 ◽  
Author(s):  
Naoto Kuratani ◽  
Yasuo Murakami ◽  
Osamu Imai ◽  
Akinori Ebe ◽  
Satoshi Nishiyama ◽  
...  
Keyword(s):  
Internal Stress ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Silicon Substrates ◽  
Nickel Films

Internal stresses in nickel films prepared by ion beam and vapor deposition

1996 ◽  
pp. 116-119
Author(s):  
Naoto Kuratani ◽  
Yasuo Murakami ◽  
Osamu Imai ◽  
Akinori Ebe ◽  
Satoshi Nishiyama ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Ion Beam ◽  
Internal Stresses ◽  
Nickel Films

A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

1997 ◽  
Vol 12 (10) ◽  
pp. 2686-2698 ◽  
Author(s):  
L. Fayette ◽  
B. Marcus ◽  
M. Mermoux ◽  
N. Rosman ◽  
L. Abello ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sequential Analysis ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Internal Stresses ◽  
Nucleation Density ◽  
Silicon Substrates

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

Study on the crystallization of nickel films prepared by the ion beam and vapour deposition method

1996 ◽  
Vol 275 (1-2) ◽  
pp. 61-63
Author(s):  
Yasuo Murakami ◽  
Naoto Kuratani ◽  
Osamu Imai ◽  
Kiyoshi Ogata
Keyword(s):  
Vapour Deposition ◽  
Ion Beam ◽  
Deposition Method ◽  
Nickel Films

Elastic Modulus and Hardness as Derived from Nanoindentation of Ni And Mo Films Prepared by Ion Beam Assisted Deposition

1994 ◽  
Vol 356 ◽  
Author(s):  
A. Wroblewski ◽  
N. Chechenin ◽  
J. BØttiger ◽  
J. Chevallier ◽  
N. Karpe ◽  
...  
Keyword(s):  
Elastic Modulus ◽  
Ion Beam ◽  
Film Stress ◽  
Major Influence ◽  
Silicon Substrates ◽  
Nickel Films ◽  
Ion Beam Assisted Deposition ◽  
Plane Film

AbstractUsing ion beam assisted deposition, 1.5–2.2 μm thick molybdenum and nickel films were prepared on silicon substrates. Some films were found to be strongly textured. By changing the rate of Ar+ bombardment during the deposition, the resulting in-plane film stresses could be changed from being strongly tensile to strongly compressive. Using nanoindentation, the hardness and elastic modulus were measured for all films, but no major influence of the film stress or different textures could be found. The elastic modulus of the Ni films was found to be close to its polycrystalline bulk value, and that of Mo was found to be about 70% of its polycrystalline bulk value.

Effects of Ga-Irradiation On Properties of Materials Processed by A Focused Ion Beam (FIB)

2000 ◽  
Vol 647 ◽  
Author(s):  
H. D. Wanzenboeck ◽  
H. Langfischer ◽  
A. Lugstein ◽  
E. Bertagnolli ◽  
U. Grabner ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Sample Surface ◽  
Deposition Process ◽  
Microelectronic Devices

AbstractFocused Ion Beam (FIB) technology allows to process various materials within a lateral range below 100 nm. The feasibility to mechanically sputter as well as to direct-write nanostructures and the fact that Ga-ions are utilized is unique for this method. The focused Ga-ions are used to locally induce a chemical vapor deposition of volatile precursor molecules adsorbed on a surface. Local deposition of metals and dielectrics has been achieved on a sub-µm scale utilizing a focused ion beam. This method is highly suitable for advanced microelectronic semiconductor fabrication. However, material specifications are narrow for these tailor-made applications. The effect of the Ga-ions implanted into the material both during sputtering and deposition has been realized as a key parameter for the function of FIB processed microelectronic devices. For Si-based semiconductors Ga can be used as dopant intentionally implanted into a Si substrate to locally modify the conductivity of Si. The results of locally confined ion irradiation on the surface roughness of a Si surface have been exploited by atomic force microscopy (AFM). Both local sputter depletion of the sample surface as well as sub-µm deposition of selected metals or dielectrics by ion-induced chemical vapor deposition (CVD) has been examined. The penetration depth and the distribution of Ga ions during the deposition process have been studied by simulation and experimentally by profiling with secondary ion mass spectroscopy (SIMS). Transmission Electron Microscopy (TEM) of cross-sections of the ion processed materials has revealed amorphisation of the crystalline substrate. For focused ion beam assisted deposition the effects of ion irradiation on the interface to the substrate and the local efficiency of the deposition are illustrated and discussed. The prospects of focused ion beam processing for modification of microelectronic devices in the sub-µm range and the limitations are demonstrated by the examples shown.

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