Defect Trapping and Precipitation Processes During Annealing of Cu and Au Implanted Si

1994 ◽  
Vol 354 ◽  
Author(s):  
J. Wong-Leung ◽  
E. Nygren ◽  
J. S. Williams ◽  
D. J. Eaglesham
Keyword(s):  
Annealing Temperature ◽  
Primary Concern ◽  
Temperature And Precipitation ◽  
System A ◽  
Transmission Electron ◽  
Device Processing ◽  
Long Time ◽  
Second Phases ◽  
Metallic Impurities

AbstractThe behaviour of metallic impurities in Si is an issue of primary concern in advanced device processing. This paper addresses the annealing behaviour of Cu and Au in Si when nanocavities are present within the substrate as potential gettering and precipitation sites. In-situ, ‘hot’ Rutherford backscattering has been used to study metal accumulation to cavities at the annealing temperature. Transmission electron microscopy has been used to study the final microstructure of the Au-Si and Cu-Si system. A range of interesting phenomena have been observed, including very efficient transient gettering of both Cu and Au to cavities at the annealing temperature and precipitation of second phases at cavities. Dissolution of accumulated metal from defect bands into solution occurs for long-time annealing. This behaviour is discussed in terms of supersaturated solid solubility processes, diffusion, defect-trapping and precipitation of Cu and Au in Si.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

In-Situ Study of Ti/TiN Stability under Nitrogen Anneal

1999 ◽  
Vol 564 ◽  
Author(s):  
P. W. DeHaven ◽  
K. P. Rodbell ◽  
L. Gignac
Keyword(s):  
Annealing Temperature ◽  
Time Range ◽  
Second Phase ◽  
Transformation Rate ◽  
Transformation Mechanism ◽  
Second Stage ◽  
Transmission Electron ◽  
Reaction Proceeds ◽  
Two Stages

AbstractThe effectiveness of a TiN capping layer to prevent the conversion of α-titantium to titanium nitride when annealed in a nitrogen ambient has been studied over the temperature range 300–700°C using in-situ high temperature diffraction and transmission electron microscopy. Over the time range of interest (four hours), no evidence of Ti reaction was observed at 300°C. At 450°C. nitrogen was found to diffuse into the Ti to form a Ti(N) solid solution. Above 500°C the titanium is transformed to a second phase: however this reaction follows two different kinetic paths, depending on the annealing temperature. Below 600°C. the reaction proceeds in two stages, with the first stage consisting of Ti(N) formation, and the second stage consisting of the conversion of the Ti(N) with a transformation mechanism characteristic of short range diffusion (grain edge nucleation). Above 600°C, a simple linear transformation rate is observed.

Ion Irradiation-Induced Amorphization in the MgO-Al2O3-SiO2 System: A Cascade Quenching Model

1996 ◽  
Vol 439 ◽  
Author(s):  
S. X. Wang ◽  
L. M. Wang ◽  
R. C. Ewing
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Glass Formation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Simple Relation ◽  
Quantitative Parameter ◽  
System A ◽  
Transmission Electron

AbstractThe ion beam-induced crystalline-to-amorphous transition was studied for crystalline phases in the MgO-A12O3-SiO 2 system. Samples were irradiated with 1.5 MeV Xe+ at temperatures from 15 to 1023 K, and the dose required for amorphization was determined by in situ transmission electron microscopy. Based on a cascade quenching model, we propose that irradiation-induced amorphization is closely related to glass formation. The rate of crystallization from a melt is the controlling factor in determining the susceptibility to amorphization and glass formation. From the analysis of cascade quenching evolution, we have derived a simple relation between amorphization dose and temperature. A quantitative parameter, S0, that describes the susceptibility to amorphization is derived that considers the crystalline structure, field strength, and phase transition temperature.

dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium

2014 ◽  
Vol 1655 ◽  
Author(s):  
Fahid Algahtani ◽  
Patrick W Leech ◽  
Geoffrey K Reeves ◽  
Anthony S Holland ◽  
Mark Blackford ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Van Der Pauw ◽  
Heated Stage

ABSTRACTThe formation of nickel germanide has been examined over a range of low temperatures (200-400 °C) in an attempt to minimize the thermal budget for the process. Cross-sectional Transmission Electron Microscopy (TEM) was used to determine the texture of the germanide layer and the morphology and constituent composition of the Ge/NiGe interface. The onset and completion of reaction between Ni and Ge were identified by means of a heated stage in combination with in-situ x-ray diffraction (XRD) measurements. The stages of reaction were also monitored using measurements of sheet resistance of the germanides by the Van der Pauw technique. The results have shown that the minimum temperature for the initiation of reaction of Ni and Ge to form NiGe was 225 °C. However, an annealing temperature > 275 °C was necessary for the extensive (and practical) formation of NiGe. Between 200 and 300 °C, the duration of annealing required for the formation of NiGe was significantly longer than at higher temperatures. The stoichiometry of the germanide was very close to NiGe (1:1) as determined using energy dispersive spectroscopy (EDS).

High-Current Reliability of Carbon Nanofibers for Interconnect Applications

2007 ◽  
Vol 1018 ◽  
Author(s):  
Hirohiko Kitsuki ◽  
Makoto Suzuki ◽  
Quoc Ngo ◽  
Kristofer Gleasson ◽  
Alan M. Cassell ◽  
...  
Keyword(s):  
Carbon Nanofibers ◽  
Scanning Transmission Electron Microscopy ◽  
Structural Damage ◽  
Heat Dissipation ◽  
High Reliability ◽  
High Current ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Long Time

AbstractWe present a high-current reliability study of carbon nanofibers (CNFs) for interconnect applications. In situ scanning transmission electron microscopy (STEM) reveals structural damage to CNFs after current stress. The effect of heat dissipation on the current capacity is also discussed by using different experimental configurations. Long-time reliability tests are performed with a vertical via interconnect structure, showing promising high reliability of CNF interconnects for future electronic devices.

Investigations on in situ Nanocrystallization and Magnetic Properties for Amorphous Fe78Si9B13 Ribbons

1999 ◽  
Vol 562 ◽  
Author(s):  
Xiangcheng Sun ◽  
A. Cabral-Prieto ◽  
M. Jose Yacaman ◽  
Wensheng Sun
Keyword(s):  
Amorphous Phase ◽  
Annealing Temperature ◽  
Amorphous State ◽  
Field Pattern ◽  
Transmission Electron ◽  
Optimum Annealing Temperature ◽  
Differential Scanning Calorimeters ◽  
Nanocrystalline Phases ◽  
Good Agreement

ABSTRACTThe amorphous state of ferromagnetic Fe78Si9B13 (Metglas 2605S-2) and itsnanocrystallization were investigated by in situ transmission electron microscope (TEM), Xraydiffraction (XRD), Mossbauer spectroscopy (MS), differential scanning calorimeters(DSC) and magnetic moment measurements. The Mössbauer spectrum exhibited anessentially symmetric hyperfine field pattern of 259KOe in as-quenched amorphous state atroom temperature. The Curie and crystallization temperature were determined to beTc=708K and Tx.= 803K, respectively. The Tx value was in good agreement with DSCmeasurement results. The occupied fraction of the nanocrystalline phases of α-Fe(Si) andFe2 at in situ optimum annealing temperature was about 57% and 43%, respectively. It isnotable that the magnetization of the amorphous phase decreases more rapidly withincreasing temperature than those of nanocrystalline ferromagnetism, suggesting thepresence of the distribution of exchange interaction in the amorphous phase or highmetalloid contents.

Lateral Reactions of Gaas with Ni Studied by Transmission Electron Microscopy

1985 ◽  
Vol 54 ◽  
Author(s):  
S. H. Chen ◽  
C. B. Carter ◽  
C. J. Palmstrøm ◽  
T. Ohashi
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Product Phase ◽  
Transmission Electron ◽  
Good Agreement

ABSTRACTA new method has been developed for making self-supporting, thin films which can be used for the in situ study, by hot-stage, transmission electron microscopy, of the reaction between Ni and GaAs. The thin-film, lateral diffusion-couples have been used to study both the kinetics and the formation of new phases. The growth rate of the ternary compound, N2GaAs showed a parabolic time dependence. At an annealing temperature of 300*C, the present experimental results show that Ni is the diffusing species and that the Ga and As remain essentially immobile. Diffusion coefficients obtained by this method are in very good agreement with those which have been obtained using conventional thin-film techniques. The results of this new technique are particularly important in view of the difficulty in identifying the composition of the product phase by methods which do not have the same lateral resolution.

scholarly journals Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material

2019 ◽  
Vol 49 (1) ◽  
Author(s):  
Byeong-Seon An
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Transmission Electron ◽  
Chalcogenide Material ◽  
Long Time ◽  
Time Observation ◽  
Change Material ◽  
Nucleation And Growth Mechanism

AbstractThe crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.

In Situ Tem Study of Reactions in Iron/amorphous Carbon Layered Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Toshio Itoh ◽  
Robert Sinclair
Keyword(s):  
Grain Size ◽  
Amorphous Carbon ◽  
Layered Structure ◽  
Annealing Temperature ◽  
In Situ Tem ◽  
Dc Sputtering ◽  
Transmission Electron ◽  
Average Grain Size ◽  
Deposited Films

ABSTRACTReactions between Fe and amorphous carbon (a-C) below 600ºC have been investigated. In situ annealing in a transmission electron microscopy (TEM) was performed on a-C/Fe/a-C trilayer films deposited by DC sputtering. As-deposited films showed a well defined tri-layered structure and an average Fe grain size of about 50Å. Cementite (Fe3C) grains appeared in the Fe layer by annealing around 300ºC. As the annealing temperature was raised, the number and size of the cementite grains increased. When the annealing temperature reached 500ºC, the Fe layer completely turned into cementite with an average grain size of 1000Å. At this point the film still kept a well defined tri-layered structure even though some parts of the cementitelayer agglomerated. Above 500ºC, the cementite layer started to “move” into the a-C leaving graphite behind. Graphite formed in this process is strongly textured with the (0002) graphite basal planes parallel to the surface of the moving cementite. This process is concluded to be carbide mediated crystallization of a-C, similar to silicide mediated crystallization of silicon in Ni-Si and Pd-Si systems.

EFFECT OF NANO-Y-ZrO2 ADDITION ON THE MICROSTRUCTURE AND CRITICAL CURRENT DENSITY OF MgB2 SUPERCONDUCTORS

2004 ◽  
Vol 03 (04n05) ◽  
pp. 563-569 ◽  
Author(s):  
Q. W. YAO ◽  
X. L. WANG ◽  
A. H. LI ◽  
S. X. DOU ◽  
P. R. MUNROE
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Magnetic Measurements ◽  
Transmission Electron ◽  
Long Time ◽  
Powder Addition ◽  
Short Time ◽  
Mgb2 Superconductors

Polycrystalline MgB 2 samples with 0, 5, 10, and 20 wt% nano- Y - ZrO 2 (YSZ) powder addition were prepared by short time, as little as several minutes, or long time in-situ reaction process. The phases, microstructures and flux pinning behaviors were characterized using X-ray diffractometry (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscope (TEM) and Magnetic Measurements. Results indicated that nano-YSZ particles included in MgB 2 grains. Samples doped with 10wt% YSZ powders showed new record of critical current density Jc as high as 1×106 and 4×106 A/cm 2 in low magnetic fields at 30 and 20K, respectively. However, the Jc drops faster compared to that made by long time sintering samples. It is proposed that the improved Jc in low fields was due to the enhanced density of the sample, which was caused by the YSZ nano-particle inclusion.

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