chalcogenide material
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Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3663
Author(s):  
Iosif-Daniel Simandan ◽  
Florinel Sava ◽  
Angel-Theodor Buruiana ◽  
Aurelian-Catalin Galca ◽  
Nicu Becherescu ◽  
...  

Ge2Sb2Te5 (GST-225) is a chalcogenide material with applications in nonvolatile memories. However, chalcogenide material properties are dependent on the deposition technique. GST-225 thin films were prepared using three deposition methods: magnetron sputtering (MS), pulsed laser deposition (PLD) and a deposition technique that combines MS and PLD, namely MSPLD. In the MSPLD technique, the same bulk target is used for sputtering but also for PLD at the same time. The structural and optical properties of the as-deposited and annealed thin films were characterized by Rutherford backscattering spectrometry, X-ray reflectometry, X-ray diffraction, Raman spectroscopy and spectroscopic ellipsometry. MS has the advantage of easily leading to fully amorphous films and to a single crystalline phase after annealing. MS also produces the highest optical contrast between the as-deposited and annealed films. PLD leads to the best stoichiometric transfer, whereas the annealed MSPLD films have the highest mass density. All the as-deposited films obtained with the three methods have a similar optical bandgap of approximately 0.7 eV, which decreases after annealing, mostly in the case of the MS sample. This study reveals that the properties of GST-225 are significantly influenced by the deposition technique, and the proper method should be selected when targeting a specific application. In particular, for electrical and optical phase change memories, MS is the best suited deposition method.


Nanoscale ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 233-241
Author(s):  
Lorenzo Maserati ◽  
Mirko Prato ◽  
Stefano Pecorario ◽  
Bianca Passarella ◽  
Andrea Perinot ◽  
...  

[AgSePh]∞ is a metal–organic chalcogenide material featuring hybrid quantum wells electronic structure. Photo-generated charge carriers can be extracted by metal contacts, enabling efficient UV photo-detection.


2020 ◽  
Vol 596 ◽  
pp. 412412
Author(s):  
H. Abassi ◽  
N. Bouguila ◽  
J. Koaib ◽  
N. Amdouni ◽  
H. Bouchriha

2019 ◽  
Vol 49 (1) ◽  
Author(s):  
Byeong-Seon An

AbstractThe crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.


2019 ◽  
Vol 125 (23) ◽  
pp. 235702
Author(s):  
Marc Ong ◽  
David M. Guzman ◽  
Quinn Campbell ◽  
Ismaila Dabo ◽  
Radi A. Jishi

2018 ◽  
Vol 5 (7) ◽  
pp. 1800068 ◽  
Author(s):  
Hyunjung Kim ◽  
Anand P. Tiwari ◽  
Eunhee Hwang ◽  
Yunhee Cho ◽  
Heemin Hwang ◽  
...  

CrystEngComm ◽  
2018 ◽  
Vol 20 (10) ◽  
pp. 1443-1454 ◽  
Author(s):  
Samrat Sarkar ◽  
Promita Howli ◽  
Uttam Kumar Ghorai ◽  
Biswajit Das ◽  
Madhupriya Samanta ◽  
...  

Asymmetric supercapacitors with superior specific capacitance and energy density are fabricated using Cu2NiSnS4, a novel and environmentally benign chalcogenide material.


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