Ion Mixing of Pulsed Laser Deposited Hydroxylapatite (HA)

1994 ◽  
Vol 354 ◽  
Author(s):  
T.L. Alford ◽  
S.W. Russell ◽  
V.B. Pizzicont ◽  
J.W. Mayer ◽  
T.E. Levine ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Quantitative Measure ◽  
Atomic Displacement ◽  
Mixing Rate ◽  
Bioactive Materials ◽  
Before And After ◽  
Modification Technique

AbstractThe use of ion-beam techniques to enhance selected properties of bioactive materials, such as the adhesion of hydroxylapatite (HA) coatings on titanium-based substrates has been investigated. In this study, very thin HA films on titanium substrates were created by pulsed laser deposition techniques. Ion irradiations were carried out using 260-keV argon ions, with fluences of 0.25-50×1015ions/cm2, and at room temperature. Rutherford backscattering spectrometry was used to evaluate sample composition before and after irradiation. The amount of mixing was quantified by the mixing rate (the amount of atomic displacement due to an irradiation fiuence). This pilot data indicates that mixing was evident after sufficient ion irradiation. The ramification of this preliminary study has provided a quantitative measure of ion mixing as a potential prosthetic biomaterial surface modification technique.

Study of Elemental Depth Distribution in the Multilayer Material \(\text{TiO}_2\)/\(\text{SiO}_2\)/Si by Rutherford Backscattering Spectrometry (RBS)

2019 ◽  
Vol 29 (3SI) ◽  
pp. 393
Author(s):  
T. V. Phuc ◽  
M. Kulik ◽  
A. P. Kobzev ◽  
L. H. Khiem
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Multilayer Structures ◽  
Multilayer Material ◽  
Transition Layers ◽  
Before And After ◽  
Elemental Depth ◽  
Irradiation Process

In this study we investigated depth distributions of elements in the multilayer structures of TiO\(_2\)/SiO\(_2\)/Si before and after ion irradiation. The samples were implanted with Ne\(^+\), Ar\(^+\), Kr\(^+\) and Xe\(^+\) ions. For each implantation the multilayer structures were irradiated by the ions with the energy 100, 150, 200 and 250 keV. The elemental concentrations in the samples were analyzed by the Rutherford Backscattering Spectrometry (RBS) method. It was found that the transition layers existed between the TiO\(_2\) and SiO\(_2\) layers. Formation of these layers derived from the ion beam mixing that was occurred at TiO\(_2\)/SiO\(_2\) interface after irradiation process. The depth profiles show that thickness of the transition layers increased with the growing energy and atomic mass of the implanted ions.

The Complementary Nature of Electron Microscopy and ION Channeling for the Assessment of Radiation Damage Evolution in Ceramics

1998 ◽  
Vol 4 (S2) ◽  
pp. 558-559
Author(s):  
K. E. Sickafus
Keyword(s):  
Damage Evolution ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Quantitative Measure ◽  
Heavy Ion ◽  
Damage Parameter ◽  
Irradiation Damage ◽  
Damage Level ◽  
Ion Channeling ◽  
Typical Experiment

In ion irradiation damage studies on ceramics, damage evolution is often assessed using Rutherford backscattering spectroscopy and ion channeling (RBS/C) techniques. In a typical experiment, a single crystal ceramic sample is irradiated with heavy ions and then the crystal is exposed to He ions along a low-index crystallographic orientation. Simultaneously, the backscattered He ion yield is measured as a function of ion energy loss. For He ions scattered from the heavy ion irradiated volume, the He ion yield increases in proportion to the heavy ion dose. The RBS/C yield rises because the He ion beam is dechanneled by, for instance, interstitial point defects and clusters and their associated strain fields. A quantitative measure of dechanneling is denoted by χmin, defined as the ratio of the He ion yield along a low-index crystal orientation, to the yield obtained in a random (non-channeling) orientation. The damage parameter xmin varies from 0 to 1, where 1 represents the maximum damage level that can be measured by RBS/C.

Improved Photoconductivity of ZnO by Ion Beam Bombardment

2005 ◽  
Vol 891 ◽  
Author(s):  
I. P. Wellenius ◽  
Anuj Dhawan ◽  
J. F. Muth ◽  
Noel A. Guardala ◽  
Jack L. Price
Keyword(s):  
Point Defects ◽  
Specific Energy ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Before And After ◽  
P Type ◽  
Film Characteristics ◽  
Defect Luminescence

ABSTRACTIn this study, single crystal ZnO films are grown by pulsed laser deposition and ion beam processing is used alter the resistivity of the films. A 3He ion beam was chosen with a specific energy to transmutate oxygen into nitrogen. Analytical ion beam techniques were used to monitor the transmutation process, and changes in film characteristics were monitored by making resistance, photoconductivity and luminescence measurements before and after ion beam processing. The amount of nitrogen produced by this method was estimated to be ∼ 1014 cm−3, and was too low to be observable as a p-type dopant due to compensation by the naturally n-type material. However, the ion beam processed films improved dramatically in resistivity, defect luminescence was reduced and photoconductivity increases consistent with the improvements with resistivity were observed. These improvements were attributed to ion beam annealing of the crystal resulting in a reduction of point defects. In some films, blistering of the surface occurred and was attributed to the formation of gas bubbles which causes delamination of the film from the substrate.

scholarly journals A Comparison of Modifications Induced by Li3+and Ag14+Ion Beam in Spectroscopic Properties of Bismuth Alumino-Borosilicate Glass Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-11 ◽  
Author(s):  
Ravneet Kaur ◽  
Surinder Singh ◽  
Om Prakash Pandey
Keyword(s):  
Thin Films ◽  
Borosilicate Glass ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Glass Network ◽  
Spectroscopic Properties ◽  
Optical Parameters ◽  
Spectroscopic Techniques ◽  
Structural And Optical Properties ◽  
Before And After

Ion irradiation effects on the glass network and structural units have been studied by irradiating borosilicate glass thin film samples with 50 MeV Li3+and 180 MeV Ag14+swift heavy ions (SHI) at different fluence rates ranging from 1012 ions/cm2to 1014 ions/cm2. Glass of the composition (65-x) Bi2O3-10Al2O3-(65-y) B2O3-25SiO2(x= 45, 40;y= 20, 25) has been prepared by melt quench technique. To study the effects of ionizing radiation, the glass thin films have been prepared from these glasses and characterized using XRD, FTIR, and UV-Vis spectroscopic techniques. IR spectra are used to study the structural arrangements in the glass before and after irradiation. The values of optical band gap, Urbach energy, and refractive index have been calculated from the UV-Vis measurements. The variation in optical parameters with increasing Bi2O3content has been analyzed and discussed in terms of changes occurring in the glass network. A comparative study of the influence of Li3+ion beam on structural and optical properties of the either glass system with Ag14+ion is done. The results have been explained in the light of the interaction that SHI undergo on entering the material.

Tribomechanical Properties of Ion-Beam-Densified Sol-Gel Zirconia Thin Films on Cubic Zirconia

1993 ◽  
Vol 308 ◽  
Author(s):  
Timothy E. Levine ◽  
Peter Revesz ◽  
James W. Mayer ◽  
Emmanuel P. Giannelis
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Sol Gel ◽  
Recoil Energy ◽  
Subsequent Decrease ◽  
Friction Measurements ◽  
Sol Gel Films ◽  
Carbon Losses ◽  
Tribomechanical Properties

ABSTRACTWe have investigated the tribomechanical properties of ion-beam-densified sol-gel zirconia overlayers on bulk zirconia. Ion irradiation of the sol-gel films leads to hydrogen, oxygen, and carbon losses as indicated by Rutherford backscattering spectrometry and forward recoil energy spectroscopy. Ellipsometry measurements show that the film thickness decreases with increasing dose. The microhardness exhibits an increase and subsequent decrease with dose. Friction measurements along with profilometry measurements indicate that severe abrasive wear of the film takes place in the first 1000 cycles after which point the substrate is in direct contact with the pin.

Shape deformation of colloidal titania nanoparticles by means of ion irradiation

2008 ◽  
Vol 1087 ◽  
Author(s):  
Juan-Carlos Cheang-Wong ◽  
Ana-Lilia Díaz-Fonseca
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Sol Gel ◽  
Sample Surface ◽  
Electronic Energy ◽  
Titania Nanoparticles ◽  
Direction Parallel ◽  
Titanium Butoxide ◽  
Before And After ◽  
Spherical Silica Particles

AbstractSpherical submicrometer-sized titanium dioxide (TiO2 or titania) particles were prepared by the sol-gel method from hydrolysis and condensation of titanium butoxide Ti(OC4H9)4 using ammonia as a catalyst in ethanol/acetonitrile and annealing in air at 100°C. Subsequently, they were deposited onto silicon substrates, in order to form a monolayer of TiO2 particles. Then these samples were irradiated at room temperature with Si2+ ions at 4, 6 and 8 MeV, with fluences in the 2×1014-2×1015 Si/cm2 range, under an angle of 45° with respect to the sample surface. The titania particles were characterized by scanning electron microscopy to determine their size and shape before and after the ion irradiation. After the Si irradiation the spherical silica particles turned into ellipsoidal particles, as a result of the increase of the particle dimension perpendicular to the ion beam and the decrease in the direction parallel to the ion beam. This deformation effect increases monotonically with the ion fluence, and depends on the electronic energy loss of the impinging ion.

Low Energy Ion Irradiation Effect on Electron Transport in Gaas/Algaas Heterostructures

1994 ◽  
Vol 354 ◽  
Author(s):  
J. Yanagisawa ◽  
A. Nozawa ◽  
Y. Yuba ◽  
S. Takaoka ◽  
K. Murase ◽  
...  
Keyword(s):  
Carrier Density ◽  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Sample Surface ◽  
Low Energy ◽  
Hall Resistance ◽  
Irradiation Effect ◽  
Before And After ◽  
Ar Gas

AbstractEffects of low energy ion beam induced damages on transport properties of a two-dimensional electron gas (2DEG) system in GaAs/AlGaAs heterostructures have been investigated. 1 keV Ar ions were irradiated on the sample surface at several ion doses (1011 - 1013 cm-2). Carrier density and electron mobility of the 2DEG formed at about 90 nm below the GaAs/AlGaAs heterostructure surface were estimated at 1.5 K by Hall resistance and longitudinal resistance measurements before and after annealing at 400°C for 10 min in an Ar gas ambient. The temperature dependence of those values was also measured for as-grown and for 1013 cm-2 ion irradiated and subsequently annealed samples. Typical results show that carrier density and mobility are not degraded severely by Ar ion irradiation at doses of 1013 cm-2 and suggest the possibility to fabricate buried structures in GaAs/AlGaAs heterostructures using low energy Si focused ion beam (FIB) irradiation and subsequent in situ overlayer growth by MBE.

Oblique Ion Etching for Copper at Elevated Temperature

2010 ◽  
Vol 670 ◽  
pp. 131-134 ◽  
Author(s):  
Tomoaki Hino ◽  
T. Kobayashi ◽  
Y. Yamauchi ◽  
Y. Nobuta ◽  
M. Nishikawa
Keyword(s):  
Elevated Temperature ◽  
Smooth Surface ◽  
Ion Irradiation ◽  
Incident Angle ◽  
Ion Beam ◽  
Polycrystalline Copper ◽  
Ion Etching ◽  
Atomic Force ◽  
Before And After ◽  
Argon Ion

In order to smooth the uneven surface of polycrystalline copper, argon ion etching at the elevated temperature was conducted. The polycrystalline copper was obliquely irradiated by argon ion beam with ion energy of 1 keV and an incident angle of 70°. The substrate temperatures during argon ion irradiation were room temperature (RT), 473 K and 573 K. Before and after the irradiation, the surface morphology was observed using an atomic force microscope (AFM). After the irradiation at 473 K and 573 K, the surface was significantly smoothed compared with that at RT. In addition, the fluence required to obtain the smooth surface can be very low, compared with the case at RT. The present study shows that the oblique ion etching at elevated temperature is quite useful to obtain the smooth surface.

MeV Ion Beam Bombardments Effects on the Thermoelectric Properties of Zn4Sb3 / CeFe(4-x)CoxSb12 Nano-Layered Superlattices

2006 ◽  
Vol 974 ◽  
Author(s):  
S. Budak ◽  
C. C. Smith ◽  
B. Zheng ◽  
C. I. Muntele ◽  
R. L. Zimmerman ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Energy Conversion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Electrical Energy ◽  
3Ω Method ◽  
Ion Beam Assisted Deposition ◽  
Before And After ◽  
Conductivity Of Thin Films

ABSTRACTWe prepared multilayers of semiconducting half-heusler β-Zn4Sb3 and skutterudites CeFe(4-x)CoxSb12 compound thin films by ion beam assisted deposition (IBAD) system for the application of thermoelectric (TE) materials. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of thin films. The thin films were then bombarded by 5 MeV Si ions for generation of nanodots in the films. We measured the cross-plane thermal conductivity by a house developed 3ω-method system, cross-plane Seebeck coefficient by a (MMR) Seebeck system, and cross plane electrical conductivity of these nanolayered systems by a (MMR) Hall system before and after bombardment. Both β-Zn4Sb3 and CeFe(4-x)CoxSb12 systems have been identified as promising thermoelectric materials for the application of thermal-to-electrical energy conversion. The nanodots produced by MeV ion beam can cause significant change in both electrical and thermal conductivity of thin films, thus improving the efficiency. The MeV ion-beam bombardment resulted in decrease in the thermal conductivity of thin films and increase in the efficiency of thermal-to-electrical energy conversion.

scholarly journals Interdiffusion and Grain-Boundary Migration in Au/Cu Bilayers During Ion-Irradiation

1991 ◽  
Vol 235 ◽  
Author(s):  
Dale E. Alexander ◽  
L. E. Rehn ◽  
Peter M. Baldo
Keyword(s):  
Grain Boundary ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Boundary Migration ◽  
Ion Beam ◽  
Film Surface ◽  
Grain Boundary Migration ◽  
Bilayer Films ◽  
Small Probe ◽  
Annealing Experiments

ABSTRACTIon irradiation and annealing experiments have been conducted on Au/Cu bilayer films to evaluate the effect of irradiation on diffusion-induced grain boundary migration (DIGM). The Au films were prepared with a large-grained microstructure with grain boundaries perpendicular to the film surface and extending through the film thickness. Irradiations were conducted with 1.5 MeV Kr at 228°C. Rutherford backscattering spectrometry of the samples revealed that interdiffusion was substantially enhanced in the irradiated area relative to the unirradiated area. Both irradiated and annealed-only areas were characterized by a nearly uniform composition of 14 at.% and 7 at.% Cu respectively through the entire thickness of the underlying Au film. Small probe X-ray energy dispersive spectroscopy showed significant lateral compositional homogeneities in both irradiated and annealed areas. These two results are consistent with previous observations of DIGM in the Au/Cu system, suggesting that this previously unexamined interdiffusion mechanism contributes to ion beam mixing.

Sign in / Sign up

Export Citation Format

Share Document