Properties of Zr-Substituted (Ba,Sr)TiO3 Thin Films for Integrated Capacitors

1999 ◽  
Vol 603 ◽  
Author(s):  
G. T. Stauf ◽  
P. S. Chen ◽  
W. Paw ◽  
J. F. Roeder ◽  
T. Ayguavives ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Bst Thin Films ◽  
Density Values ◽  
Bst Films ◽  
The Impact

AbstractThere has been significant interest recently in use of BaSrTiO3 (BST) thin films for integrated capacitors; these devices have benefits for high frequency operations, particularly when high levels of charge or energy storage are required. We discuss the electrical properties of BST thin films grown by metalorganic chemical vapor deposition (MOCVD) which make them suitable for these applications, as well as the impact of processing conditions such as growth temperature on specific film properties. We have also examined addition of Zr in amounts ranging up to 20% to the BST films. X-Ray diffraction indicates that the Zr is incorporated into the BST lattice. Voltage withstanding capability, leakage and dielectric constant of the thin films have been measured as functions of deposition temperature and Zr content. Addition of Zr to BST films increases breakdown voltages by as much as a factor of two, to approximately 2 MV/cm, raising their energy storage density values to levels approaching 30 J/cc. Charge storage densities of above 60 fF/µm2were also obtained.

Effects of LSCO Buffer Layer on the Microstructure and Dielectric Properties of Ba0.6Sr0.4TiO3 Films Prepared by Sol-gel Methods

2009 ◽  
Vol 1199 ◽  
Author(s):  
Songwei Han ◽  
Shengwen Yu ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
X Ray ◽  
Bst Thin Films ◽  
Structure And Morphology ◽  
Bst Films

AbstractIn this work, Ba0.6Sr0.4TiO3(BST) thin films were deposited on Ti substrates using conductive La0.5Sr0.5CoO3 (LCSO) as buffer layers. Both BST and LSCO films were prepared by sol-gel methods. The structure and morphology of BST and LSCO films were analyzed by X-ray diffraction (XRD). XRD results show that both BST and LSCO films have perovskite structure with random orientation. The dielectric properties of BST films were dependent on the thickness of LSCO buffer layers. Upon using LSCO buffer layers, the dielectric properties of BST films were significantly improved. The dielectric constant, tunability, and dielectric loss of BST thin films for LSCO of 150 nm achieved about 453, 0.032 and 31.26% respectively.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Preparation of AlN thin films by means of CVD using iodide source under atmospheric pressure

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroki Iwane ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Sapphire Substrate ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Aluminum Iodide

AbstractEpitaxial aluminum nitride (AlN) thin films were successfully prepared on the (0001) sapphire substrate by chemical vapor deposition (CVD) using aluminum iodide (AlI3) and ammonia (NH3) under atmospheric pressure at 750 ºC. The crystallographic relationship between AlN thin films and Al2O3 substrate is in the following; AlN(0001)//Al2O3(0001) and AlN[1010]//Al2O3[1120]. Lattice parameters of AlN thin film measured by X-ray diffraction revealed that c=0.498 and a=0.311 nm, respectively. Residual stress estimated by modified sin2ψ method was 0.38 GPa in compressive stress. Cross-sectional TEM observation revealed that an interlayer lies between the AlN films and the sapphire substrate. It was suggested that relaxation of residual stress caused by the mismatching of lattice parameter and thermal expansion coefficient was brought about by the interlayer.

Lead Titanate Thin Films Prepared by Metallorganic Chemical Vapor Deposion (MOCVD) on Sapphire, Pt, and RuOx Substrates

1993 ◽  
Vol 335 ◽  
Author(s):  
Warren C. Hendricks ◽  
Seshu B. Desu ◽  
Chien H. Peng
Keyword(s):  
Thin Films ◽  
Ruthenium Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Composition Control ◽  
Oxide Substrates ◽  
Temperature Deposition ◽  
Titanium Ethoxide

AbstractTransparent and highly specular PbTiO3 thin films were deposited on sapphire, platinum and ruthenium oxide-coated silicon wafers by hot-wall metallorganic chemical vapor deposition (MOCVD). Lead bis-tetramethylheptadionate and titanium ethoxide were used as chemical precursors. Films were deposited over a range of experimental conditions. X-ray diffraction (XRD) was used to determine the phases present in the films; Scanning Electron Microscopy (SEM) was used to examine the surface morphology and Energy Dispersive Spectroscopy (EDS) was used to determine the composition. Optical spectra were obtained to confirm the highly dense and transparent nature of the films. The chemical stability of the ruthenium oxide substrates in the MOCVD environment as well as the existence of a high-temperature deposition regime for composition control are also discussed.

Ferroelectric Thin Films of Bismuth Titanate Prepared by Mocvd

1991 ◽  
Vol 243 ◽  
Author(s):  
H. Wang ◽  
L. W. Fu ◽  
S. X. Shang ◽  
S. Q. Yu ◽  
X. L. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Dispersion Analysis ◽  
Ferroelectric Thin Films ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mocvd Technique

AbstractThe ferroelectric thin films of bismuth titanate (Bi4Ti3O12) have been prepared by metalorganic chemical vapor deposition ( MOCVD) technique at atmosphere. The triphenyl bismuth (Bi(CaH5 ) 3)and tetrabutyl titanate (C16H36O4Ti) were used as precursors. Dense Bi4Ti3 O12 films with smooth shinning surface have been grown on Si( 100) substrates at 550°C whithout postannealing. The as- grown films were characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy dispersion analysis ( EDAX). The films showed well-ordered crystallinity with an (001)preffered orientation. The influence of growth parameters on deposition rate, composition and morphology of as-grown films was also discussed.

DEPOSITION OF TiAlV THIN FILMS BY PULSED LASER AND DC MAGNETRON SPUTTERING: STRUCTURAL, COMPOSITIONAL AND ELECTROCHEMICAL CORROSION STUDY

2019 ◽  
Vol 27 (08) ◽  
pp. 1950188
Author(s):  
A. ALKHAWWAM ◽  
B. ABDALLAH ◽  
A. K. JAZMATI ◽  
M. TOOTANJI ◽  
F. LAHLAH
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Corrosion Test ◽  
Pulsed Laser ◽  
Electrochemical Corrosion ◽  
Target Material ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
X Ray

In this work, TiAlV thin films have been prepared on two different types of substrates: silicon and stainless steel (SS304) by two deposition methods: Pulsed Laser Deposition (PLD) and DC magnetron sputtering. Different techniques have been employed in order to characterize film properties such as: Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-ray (EDX), X-ray diffraction (XRD), microhardness and corrosion test. EDX analysis showed that the deposited films are slightly different from that of the target material Ti6Al4V alloy. The measured microhardness values are about 11.7[Formula: see text]GPa and 4.7[Formula: see text]GPa for films prepared by PLD and DC magnetron sputtering, respectively. Corrosion test indicated that the corrosion resistance of the two TiAlV films deposited on SS304 substrates in (0.9% NaCl) physiological normal saline medium was significantly improved compared with the SS304 substrates. These attractive results could permit applications of our films in the medical implants fabrication.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Low Volume Resistivity Chemical Vapor Deposited Boron Doped Polycrystalline Thin Diamond Film Growth on Sapphire

1996 ◽  
Vol 423 ◽  
Author(s):  
Hassan Golestanian ◽  
S. Mirzakuchaki ◽  
E. J. Charlson ◽  
T. Stacy ◽  
E. M. Charlson
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Volume Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Chemical Vapor Deposited ◽  
Low Volume ◽  
Diamond Thin Films

AbstractHot-filament chemical vapor deposited (HFCVD) boron doped polycrystalline diamond thin films having low volume resistivity were grown on sapphire. The films were characterized using scanning electron microscope (SEM), X-ray diffraction, and current-voltage measurements. SEM micrographs show good crystalline structure with preferred (100) orientation normal to the surface of the film. X-ray diffraction pattern revealed diamond characteristics with the four typical diamond peaks present. Finally, the obtained I-V characteristics indicated that the film's volume resistivity is at least two orders of magnitude lower than those of HFCVD polycrystalline diamond thin films grown on silicon under similar growth conditions.

Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films

2011 ◽  
Vol 287-290 ◽  
pp. 1456-1459 ◽  
Author(s):  
P. C Chang ◽  
C. L Yu ◽  
Y. W Jahn ◽  
S. J Chang ◽  
K. H Lee
Keyword(s):  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Effect Of Temperature ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Different Temperatures ◽  
Peak Emission

InxGa1-xN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures between 740°C to 830°C. The thickness of InGaN film is 50nm for all samples. The incorporation of indium is found to increase with decreasing grown temperature. The optical properties and film quality of the samples have been investigated by photoluminescence (PL) system and X-ray diffraction (XRD). The Full Width at Half Maximum (FWHM) of PL and XRD decreases with increasing the grown temperature. We also found that the peak emission of PL shifts with changing the grown temperature. The effect of temperature on the film properties was determined. This understanding will lead to better quality control of the optoelectronic devices.

Characterization of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films with Composition Near the Morphotropic Phase Boundary

2002 ◽  
Vol 748 ◽  
Author(s):  
Keisuke Saito ◽  
Toshiyuki Kurosawa ◽  
Takao Akai ◽  
Shintaro Yokoyama ◽  
Hitoshi Morioka ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Composition Range ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Pzt Thin Films ◽  
X Ray

ABSTRACT200-nm-thick Pb(Zrx,Ti1-x)O3 (PZT) thin films with zirconium composition in the range from 0% to 65% were epitaxially grown on (001)c SrRuO3 (SRO)//SrTiO3 (STO) single crystal substrates by pulsed metalorganic chemical vapor deposition (pulsed MOCVD). Constituent crystallographic phases were characterized by high-resolution X-ray diffraction reciprocal space mapping. It was found that PZT thin films having zirconium composition from 45% to 60% show mixed tetragonal and pseudocubic phases and their lattice parameters remained constant in this composition range.

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