scholarly journals Microstructure and Mechanical Properties of Nitrided Molybdenum Silicide Coatings

1993 ◽  
Vol 322 ◽  
Author(s):  
J-P. Hirvonen ◽  
I. Suni ◽  
H. Kattelus ◽  
R. Lappalainen ◽  
P. Torri ◽  
...  

AbstractMo-Si-N films with a high nitrogen concentration were produced by sputter-deposition in the presence of nitrogen plasma. The chemical composition was determined with Rutherford backscattering and nuclear reaction analysis. The ratio of Mo to Si was 1:2 in the coatings with a nitrogen concentration of 50 %. The microstructure of the as-deposited coatings on a silicon substrate was amorphous and no crystallization was found after annealing up to 1000 °C, although some relaxation was observed in X-ray diffraction. This was confirmed in highresolution transmission electron microscope examination. The hardness of the Mo-Si-N films was 18.8 GPa as determined with a nanoindenter. This is significantly higher than that of MoSi2 films, 11.2 GPa. The hardness of the Mo-Si-N films increased to 24.4 GPa after annealing at 800 °C, which is approximately the same as the hardness of the high-temperature tetragonal phase of MoSi2, 25.5 GPa. Similarly, the modulus of the as-deposited Mo-Si-N film was higher (257 GPa) than that of the MOSi2 film (222 GPa). However, only a slight increase in the modulus of the Mo-Si-N film was found after annealing at 800 °C, whereas the modulus of the crystallized tetragonal MoSi2 was 382 GPa. No cracking was found in the Mo-Si-N films even after annealing at 1000 °C.

1993 ◽  
Vol 309 ◽  
Author(s):  
Thomas J. Licata ◽  
Timothy D. Sullivan ◽  
Roy S. Bass ◽  
James G. Ryan ◽  
David B. Knorr

AbstractIncreasing circuit densities produce higher metal wiring aspect ratios, and more difficult feature fill for damascene processing. One method of extending the use of sputter deposition to challenging aspect ratios is to collimate the sputtered flux using a collimator plate, and to avoid randomizing the collimated flux by using low process pressures corresponding to long sputtered atom mean free paths. In this paper, we discuss our fabrication of damascene AI-0.5Cu-2Si and AI-2Mg wiring using both collimated and uncollimated sputtering, and our observations of collimation-induced changes in Al alloy electromigration and microstructure. Our experiments show that collimation has only a small effect on AlCuSi, but a large effect on AIMg. Specifically, the median time to electromigration failure for collimated AIMg was ∼10X the value for uncollimated AlMg and ∼6X the values for collimated and uncollimated AlCuSi. Transmission electron microscope and x-ray diffraction analyses of these films show that the collimation-induced improvement in AIMg t50 is associated with the formation of smaller, lower strain grains which are clustered in very well-oriented (111) domains. We propose that the advantageous AlMg microstructure results from enhanced texture produced by aspects of the collimated deposition active in the absence of incoherent precipitates.


1995 ◽  
Vol 382 ◽  
Author(s):  
D. G. Stearns ◽  
K. M. Skulina ◽  
M. Wall ◽  
C. S. Alford ◽  
R. M. Bionta ◽  
...  

ABSTRACTMultilayer (ML) structures composed of Mo-Be, Ru-Be and Rh-Be with bilayer periods of - 6 nm have been grown using dc magnetron sputter deposition. The ML microstructure has been characterized using x-ray diffraction and high-resolution transmission electron microscopy, and the normal incidence reflectivity has been measured at soft x-ray wavelengths.


2001 ◽  
Vol 693 ◽  
Author(s):  
U. D. Lanke ◽  
A. Koo ◽  
B. J. Ruck ◽  
H. K. Lee ◽  
A. Markwitz ◽  
...  

AbstractAmorphous GaN films have been deposited onto various substrates by ion-assisted deposition. The films were deposited at room temperature using nitrogen ion energies in the range 40-900 eV. Rutherford backscattering spectroscopy and nuclear reaction analysis show that the Ga:N atomic ratio is approximately one for films grown with ion energy near 500 eV; these films have the highest transparency. Films grown with ion energies below 300 eV are Ga rich, and show reduced transparency across the visible. Raman spectroscopy, x-ray diffraction, and transmission electron microscopy confirm the amorphous nature of the films. Annealing studies on a-GaN establish that the films begin to crystallise at a temperature of about 700 C. To investigate the local bonding environment of the Ga or N atoms, we have measured the extended x-ray absorption fine structure (EXAFS) of the transparent GaN films. The EXAFS results indicate that the films are dominated by heteropolar tetrahedral bonding, with a low density of homopolar bonds.


1998 ◽  
Vol 13 (2) ◽  
pp. 440-445 ◽  
Author(s):  
D. K. Inia ◽  
F. D. Tichelaar ◽  
W. M. Arnoldbik ◽  
A. M. Vredenberg ◽  
D. O. Boerma

Nitrogen was introduced in an iron layer underneath a top layer of nickel. This was done by ion implantation of N into the Ni layer at a temperature of 200 °C. During implantation and subsequent anneals at 250 and 300 °C, N diffuses from the Ni layer into the Fe layer because of a larger affinity of Fe for N than of Ni for N. The concentration depth profiles of N in the Ni/Fe bilayers, as recorded with the nuclear reaction analysis technique, show at the highest implantation dose a peak below the Ni/Fe interface. From structural analysis techniques (x-ray diffraction and cross-sectional transmission electron microscopy) it was observed that this peak is due to the presence of an ε–Fe3−xN layer below the Ni/Fe interface. It is thus shown that ε –nitride can be formed in Fe at such low temperatures in the absence of radiation damage.


1991 ◽  
Vol 239 ◽  
Author(s):  
Joost J. Vlassak ◽  
Takenori Nakayama ◽  
Toyohiko J. Konno ◽  
William D. Nix

ABSTRACTIron zirconium multilayer films have been prepared by sputter deposition and studied using x-ray diffraction, high-resolution transmission electron microscopy and Nanoindenter techniques. The composition-modulation wavelength was varied between 0.8 and 92 nm. For modulation wavelengths greater than 4 nm the multilayers are crystalline with amorphous interfaces; for smaller wavelengths the samples are entirely amorphous. It was not possible to obtain layered structures with wavelengths smaller than 0.8 nm.Both the hardness and the elastic modulus were measured as a function of composition-modulation wavelength by means of continuous indentation testing. The elastic modulus shows some variation with wavelength; the average value being 131 GPa. The hardness increases sharply when the modulation wavelength decreases below 4 nm. We attribute this increase to die crystalline to amorphous transition that occurs in these films at this wavelength.


1994 ◽  
Vol 341 ◽  
Author(s):  
Silvia Schwyn Thöny

AbstractThe physical and optical properties of KNbO3 layers grown on (001) oriented spinel and MgO substrates by planar rf-sputter deposition were studied. Rutherford Backscattering measurements showed that stoichiometric films could be obtained by using K2CO3 enriched targets and 100% argon as a sputtering gas. The x-ray diffraction spectra showed that single crystalline tetragonal films could be obtained at temperatures in the range of 580–610°C. Furthermore, channelling experiments indicated good crystal quality with a χmin of 40%. High resolution Transmission Electron Microscopy of the films revealed epitaxial growth, but also domains with a typical width of 10–20 nm. Moreover, it was possible to excite waveguide modes with losses of only 1.1 dB/cm at λ = 632.8 nm. The nonlinear optical coefficient d31 was determined by the Maker-fringe technique using the 1.06 μm Nd:YAG laser fundamental wavelength. This yielded a d31 value of 5 pm/V. The electro-optic properties was investigated by phase modulation technique in a Michelson interferometer.


2010 ◽  
Vol 638-642 ◽  
pp. 3597-3602 ◽  
Author(s):  
Ludovica Rovatti ◽  
Roberto Montanari ◽  
Nadia Ucciardello ◽  
Alessio Mezzi ◽  
Saulius Kaciulis ◽  
...  

The discontinuous precipitation of a high-nitrogen (0.8 wt%) austenitic steel has been investigated after successive steps of heat treatment at two different temperatures (800 and 850 °C). After each step of heating the material has been examined by X-ray diffraction (XRD), optical microscopy (OM), transmission electron microscopy (TEM), Auger electron spectroscopy (AES) and microhardness tests. The precipitation of Cr2N induces the formation of a secondary austenitic phase, leads to the redistribution of N between transformed and untransformed zones and to local variations of mechanical properties.


2021 ◽  
Vol 6 (1) ◽  
pp. 4
Author(s):  
Rudy Trejo-Tzab ◽  
Alejandro Avila-Ortega ◽  
Patricia Quintana-Owen ◽  
Ricardo Rangel ◽  
Mayra Angélica Álvarez-Lemus

In the present work, N-TiO2−x/Pt was synthesized using a homemade nitrogen plasma (AC) discharge system. The overall procedure use of low-power nitrogen plasma (100 watts) with 1 and 2 h of plasma discharge to successfully impregnate platinum nanoparticles on P25 titanium dioxide. The obtained samples were characterized using X-ray diffraction (XRD), UV–Vis diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy (HRTEM). The results reveal the incorporation of metallic Pt up to 2.9% on the surface of TiO2 by increasing the duration of plasma discharge by up to two hours with a constant power of 100 watts. Likewise, the incorporation of nitrogen atoms into a lattice crystal was also favored, confirming a direct relationship between the amount of Pt and nitrogen atoms introduced in TiO2 as a function of the duration of plasma treatment. By characterizing nanoparticles loaded on a N-TiO2−x/Pt surface, we show that joined platinum nanoparticles have two different patterns, and the boundary between these two regions coalesces. The results demonstrate that the use of nitrogen plasma to impregnate platinum nanoparticles on the surface of TiO2 to obtain N-TiO2−x/Pt allows wide and relevant physics and chemistry applications.


Author(s):  
R. E. Herfert

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.


Author(s):  
R. Gronsky

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.


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