Structure and Mechanical Properties of Fe/Zr Multilayers.

1991 ◽  
Vol 239 ◽  
Author(s):  
Joost J. Vlassak ◽  
Takenori Nakayama ◽  
Toyohiko J. Konno ◽  
William D. Nix

ABSTRACTIron zirconium multilayer films have been prepared by sputter deposition and studied using x-ray diffraction, high-resolution transmission electron microscopy and Nanoindenter techniques. The composition-modulation wavelength was varied between 0.8 and 92 nm. For modulation wavelengths greater than 4 nm the multilayers are crystalline with amorphous interfaces; for smaller wavelengths the samples are entirely amorphous. It was not possible to obtain layered structures with wavelengths smaller than 0.8 nm.Both the hardness and the elastic modulus were measured as a function of composition-modulation wavelength by means of continuous indentation testing. The elastic modulus shows some variation with wavelength; the average value being 131 GPa. The hardness increases sharply when the modulation wavelength decreases below 4 nm. We attribute this increase to die crystalline to amorphous transition that occurs in these films at this wavelength.

1993 ◽  
Vol 309 ◽  
Author(s):  
Thomas J. Licata ◽  
Timothy D. Sullivan ◽  
Roy S. Bass ◽  
James G. Ryan ◽  
David B. Knorr

AbstractIncreasing circuit densities produce higher metal wiring aspect ratios, and more difficult feature fill for damascene processing. One method of extending the use of sputter deposition to challenging aspect ratios is to collimate the sputtered flux using a collimator plate, and to avoid randomizing the collimated flux by using low process pressures corresponding to long sputtered atom mean free paths. In this paper, we discuss our fabrication of damascene AI-0.5Cu-2Si and AI-2Mg wiring using both collimated and uncollimated sputtering, and our observations of collimation-induced changes in Al alloy electromigration and microstructure. Our experiments show that collimation has only a small effect on AlCuSi, but a large effect on AIMg. Specifically, the median time to electromigration failure for collimated AIMg was ∼10X the value for uncollimated AlMg and ∼6X the values for collimated and uncollimated AlCuSi. Transmission electron microscope and x-ray diffraction analyses of these films show that the collimation-induced improvement in AIMg t50 is associated with the formation of smaller, lower strain grains which are clustered in very well-oriented (111) domains. We propose that the advantageous AlMg microstructure results from enhanced texture produced by aspects of the collimated deposition active in the absence of incoherent precipitates.


2008 ◽  
Vol 373-374 ◽  
pp. 104-107 ◽  
Author(s):  
J. Gao ◽  
Z.L. Wu ◽  
Z.P. Zhang ◽  
B.S. Cao ◽  
M.K. Lei

Fe/Cu nanometer-scale multilayers with nominal modulation wavelengths ranging from 5 to 40 nm are deposited by direct current magnetron sputtering on Si (100) substrates. Modulation structures of the multilayers are examined by small angle / wide angle x-ray diffraction (SA/WAXRD) and cross-sectional transmission electron microscopy (XTEM). Hardness of the multilayers is measured by using nanoindentation. All the multilayers have Fe (110) and Cu (111) textures. Interface coherency is observed in the multilayers with designed modulation wavelengths of 5 and 10 nm. The hardness increases firstly and then deceases with increasing the modulation wavelength, and reaches peak value of 7.29±0.29 GPa in the multilayers with nominal modulation wavelength of 10 nm. The evolution of the hardness of the mulitlayers is explained by interface width and modulus difference between sublayers.


1995 ◽  
Vol 382 ◽  
Author(s):  
D. G. Stearns ◽  
K. M. Skulina ◽  
M. Wall ◽  
C. S. Alford ◽  
R. M. Bionta ◽  
...  

ABSTRACTMultilayer (ML) structures composed of Mo-Be, Ru-Be and Rh-Be with bilayer periods of - 6 nm have been grown using dc magnetron sputter deposition. The ML microstructure has been characterized using x-ray diffraction and high-resolution transmission electron microscopy, and the normal incidence reflectivity has been measured at soft x-ray wavelengths.


1994 ◽  
Vol 9 (6) ◽  
pp. 1456-1467 ◽  
Author(s):  
P.B. Mirkarimi ◽  
S.A. Barnett ◽  
K.M. Hubbard ◽  
T.R. Jervis ◽  
L. Hultman

Epitaxial TiN/V0.3Nb0.7N superlattices with a 1.7% lattice mismatch between the layers were grown by reactive magnetron sputtering on MgO(001) substrates. Superlattice structure, crystalline perfection, composition modulation amplitudes, and coherency strains were studied using transmission electron microscopy and x-ray diffraction. Hardness H and elastic modulus were measured by nanoindentation. H increased rapidly with increasing Λ, peaking at H values ≍75% greater than rule-of-mixtures values at Λ ≍ 6 nm, before decreasing slightly with further increases in Λ. A comparison with previously studied lattice-matched TiN/V0.6Nb0.4N superlattices, which had nearly identical composition modulation amplitudes, showed a similar H variation, but a smaller H enhancement of ≍50%. The results suggest that coherency strains, which were larger for the mismatched TiN/V0.3Nb0.7N superlattices, were responsible for the larger hardness enhancement. The results are discussed in terms of coherency strain theories developed for spinodally decomposed materials. Nanoindenter elastic modulus results showed no significant anomalies.


1994 ◽  
Vol 9 (8) ◽  
pp. 1961-1966 ◽  
Author(s):  
Toshifumi Satoh ◽  
Hideaki Adachi ◽  
Yo Ichikawa ◽  
Kentaro Setsune ◽  
Kiyotaka Wasa

Multilayer thin films of SrCuO2/(Sr0.5Ca0.5)CuO2 with an infinite-layer structure have been prepared on (100) SrTiO3 single crystals by multitarget rf magnetron sputtering. The structural analyses of the multilayers were carried out by means of x-ray diffraction (XRD), secondary ion-mass-spectroscopy (SIMS), and transmission electron microscopy (TEM). Heteroepitaxial growth of the SrCuO2 and (Sr0.5Ca0.5)CuO2 layers was confirmed to be with the c-axis perpendicular to the (100) SrTiO3 surface. The XRD and SIMS measurements revealed that the compositional modulations of the multilayer films were successfully constructed as we designed. However, in the TEM images, there existed planar dislocations parallel to the ac- and bc-planes, which went across the boundaries of the SrCuO2 and (Sr0.5Ca0.5)CuO2 layers. The resistivity of the multilayer films showed semiconductor-like behavior with temperature, and there was no relation between electric properties and modulation wavelength.


1993 ◽  
Vol 322 ◽  
Author(s):  
J-P. Hirvonen ◽  
I. Suni ◽  
H. Kattelus ◽  
R. Lappalainen ◽  
P. Torri ◽  
...  

AbstractMo-Si-N films with a high nitrogen concentration were produced by sputter-deposition in the presence of nitrogen plasma. The chemical composition was determined with Rutherford backscattering and nuclear reaction analysis. The ratio of Mo to Si was 1:2 in the coatings with a nitrogen concentration of 50 %. The microstructure of the as-deposited coatings on a silicon substrate was amorphous and no crystallization was found after annealing up to 1000 °C, although some relaxation was observed in X-ray diffraction. This was confirmed in highresolution transmission electron microscope examination. The hardness of the Mo-Si-N films was 18.8 GPa as determined with a nanoindenter. This is significantly higher than that of MoSi2 films, 11.2 GPa. The hardness of the Mo-Si-N films increased to 24.4 GPa after annealing at 800 °C, which is approximately the same as the hardness of the high-temperature tetragonal phase of MoSi2, 25.5 GPa. Similarly, the modulus of the as-deposited Mo-Si-N film was higher (257 GPa) than that of the MOSi2 film (222 GPa). However, only a slight increase in the modulus of the Mo-Si-N film was found after annealing at 800 °C, whereas the modulus of the crystallized tetragonal MoSi2 was 382 GPa. No cracking was found in the Mo-Si-N films even after annealing at 1000 °C.


2001 ◽  
Vol 673 ◽  
Author(s):  
Jon M. Molina-Aldareguia ◽  
Stephen J. Lloyd ◽  
Zoe H. Barber ◽  
William J. Clegg

ABSTRACTThere is evidence indicating that multilayer films can be harder than monolithic ones. To investigate this, TiN/NbN multilayers with bilayer thicknesses ranging from 4 nm to 30 nm have been grown on MgO (001) single crystals using reactive magnetron sputtering. The sharpness of the interface and the composition modulation, which would be expected to strongly influence dislocation motion, have been studied by X-ray diffraction (XRD). These experiments show that the interfaces remain reasonably sharp (interface thickness ∼1 nm) and the composition modulation amplitude is maximum for multilayers with bilayer thicknesses greater than ∼10 nm. With thinner bilayers, the composition modulation decreases but the layered structure remains. Despite this, the nanoindentation hardness of the multilayers is between 20 and 25 GPa, which is similar to that of TiN and NbN alone, and therefore, no hardening due to the layering is observed. The deformation mechanisms observed under the indent in the TEM are consistent with these results.


1997 ◽  
Vol 475 ◽  
Author(s):  
J.D. Jarratt ◽  
T.J. Klemmer ◽  
J.A. Barnard

ABSTRACTThe microstructure of Co90Feio/Ag giant magnetoresistive multilayer films has been investigated using x-ray diffraction (XRD) and cross-sectional transmission electron microscopy. Columnar grains with a (111) fiber growth texture is observed. A comparison is made between the observed layering structure and earlier multilayer schematics based on the literature and magnetic and magnetoresistive measurements as a function of layer thickness. A direct correlation is made between superlattice satellite peak signals from selected area electron diffraction patterns and XRD scans.


1999 ◽  
Vol 14 (3) ◽  
pp. 771-779 ◽  
Author(s):  
K. Lu ◽  
M. L. Sui ◽  
J. H. Perepezko ◽  
B. Lanning

The reaction kinetics in vapor-deposited indium/amorphous-selenium (a-Se) multilayer thin films were studied using differential scanning calorimetry (DSC), x-ray diffraction (XRD), and transmission electron microscopy (TEM). A number of reactions were observed upon heating with characteristic temperatures which were found to be independent of the multilayer modulation wavelength. The initial interface reaction between In and a-Se is the formation of an In2Se phase. Kinetic analyses of the In2Se formation process combined with TEM observations indicated that interface reaction is characterized by the two-dimensional growth of pre-existing In2Se regions formed during deposition to impingement in the plane of the original In/a-Se interface. The change of the density of In2Se grains with temperature was analyzed in terms of the derived kinetic parameters, which is consistent with TEM observations and the heat release measurements.


1993 ◽  
Vol 313 ◽  
Author(s):  
Toyohiko J. Konno ◽  
Takenori Nakayama ◽  
Bruce M. Clemens ◽  
Robert Sinclair

ABSTRACTWe investigated structural and magnetic properties of Fe/Zr Multilayer films using high-resolution transmission electron Microscopy, X-ray diffraction and vibrating sample Magnetometry. For films with wavelength (Λ) ≥ 80Å, the interface region between the Fe and Zr layers exhibits a 15–20Å thick amorphous structure. The Magnetization curves of these films showed a monotonous decrease in the saturation magnetizations with Λ, whose trend is well explained by a simple asymptotic model that assumes the interface amorphous layer to be non-ferromagnetic. Films with Λ≤40Å exhibit a compositionally-Modulated amorphous structure. The latter films are paramagnetic except for the one with Λ=40Å, which showed a superparamagnetic behavior.


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