On the Mechanism of Ultra Thin Silicon Oxide Film Growth During Thermal Oxidation

1993 ◽  
Vol 318 ◽  
Author(s):  
E.P. Gusev ◽  
H.C. Lu ◽  
T. Gustafsson ◽  
E. Garfunkel
Keyword(s):  
Thermal Oxidation ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxide ◽  
Film Growth ◽  
Oxide Films ◽  
Growth Conditions ◽  
Ion Scattering ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Medium Energy Ion Scattering

ABSTRACTThe growth of ultra-thin oxide films by the thermal oxidation of silicon has been studied by low and medium energy ion scattering spectroscopies (LEIS and MEIS) and X-ray photoelectron spectroscopy (XPS). To help elucidate the diffusional and mechanistic aspects of oxide growth we have used sequential isotope oxidation (18O2 followed by 16O2). LEIS demonstrates that both 18O and 16O atoms are on the silicon surface under our growth conditions. MEIS also distinguishes 18O from 16O and gives a depth distribution for both with high accuracy. Our results show that several key aspects of the Deal-Grove model (oxygen diffusion to the Si-SiO2 interface and oxide formation at the interface) are consistent with our results for 50Å films. For very thin oxide films (15Å or less), we found a mixed isotopic distribution in the film, demonstrating more complex oxidation behavior.

Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering

1995 ◽  
Vol 52 (3) ◽  
pp. 1759-1775 ◽  
Author(s):  
E. P. Gusev ◽  
H. C. Lu ◽  
T. Gustafsson ◽  
E. Garfunkel
Keyword(s):  
Growth Mechanism ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Medium Energy ◽  
Ion Scattering ◽  
Thin Silicon ◽  
Medium Energy Ion Scattering

Characteristics of Ultra violet-Assisted Pulsed Laser Deposited Thin Oxide Films

2000 ◽  
Vol 623 ◽  
Author(s):  
V. Craciun ◽  
R.K. Singh
Keyword(s):  
Oxide Films ◽  
Pulsed Laser ◽  
Ultra Violet ◽  
Growth Conditions ◽  
Gaseous Species ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Uv Photons ◽  
Substrate Temperatures

AbstractThe properties of thin oxide films such as Y2O3, ZnO and Ba0.5Sr0.5TiO3 grown using an in situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique have been studied. With respect to films grown by conventional PLD under similar conditions but without UV illumination, the UVPLD grown films exhibited better structural and optical and electrical properties, especially for lower substrate temperatures. They also exhibited a better stoichiometry and contained less physisorbed oxygen than the conventional PLD grown layers. These improvements can be traced to several factors. Firstly, deep UV photons and ozone ensure a better in situ cleaning of the substrate prior to the deposition. Secondly, the presence of more reactive gaseous species like ozone and atomic oxygen formed by photodissociation of molecular O2 promotes the growth of more oxygenated films. Thirdly, absorption of UV photons by adatoms could result in an increased of their surface mobility. All these factors have a beneficial effect upon crystalline growth, especially for moderate substrate temperatures. For optimised growth conditions, the crystalline quality and properties of ultraviolet-assisted pulsed laser deposited films was similar to that of films grown using conventional PLD at substrate temperatures of at least 200°C higher.

Atomic transport mechanisms in thin oxide films grown on zirconium by thermal oxidation, as-derived from 18O-tracer experiments

2011 ◽  
Vol 59 (20) ◽  
pp. 7498-7507 ◽  
Author(s):  
G. Bakradze ◽  
L.P.H. Jeurgens ◽  
T. Acartürk ◽  
U. Starke ◽  
E.J. Mittemeijer
Keyword(s):  
Thermal Oxidation ◽  
Oxide Films ◽  
Transport Mechanisms ◽  
Atomic Transport ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Tracer Experiments
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