Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering

1995 ◽  
Vol 52 (3) ◽  
pp. 1759-1775 ◽  
Author(s):  
E. P. Gusev ◽  
H. C. Lu ◽  
T. Gustafsson ◽  
E. Garfunkel
Keyword(s):  
Growth Mechanism ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Medium Energy ◽  
Ion Scattering ◽  
Thin Silicon ◽  
Medium Energy Ion Scattering

Analysis of silicon–oxide–silicon nitride stacks by medium-energy ion scattering

2000 ◽  
Vol 18 (5) ◽  
pp. 2503 ◽  
Author(s):  
D. Landheer ◽  
P. Ma ◽  
W. N. Lennard ◽  
I. V. Mitchell ◽  
C. McNorgan
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering

scholarly journals Synthesis and Growth Mechanism of Stable Prenucleated (≈0.8 nm Diameter) PbS Quantum Dots by Medium Energy Ion Scattering Spectroscopy

Materials ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1109
Author(s):  
Young Park ◽  
Seung Park ◽  
Kang-Won Jung ◽  
Yunju Hwang ◽  
Saurav Sorcar ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Growth Mechanism ◽  
Nucleation Theory ◽  
Classical Nucleation Theory ◽  
Medium Energy ◽  
Ion Scattering ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Medium Energy Ion Scattering ◽  
Pbs Quantum Dots

In the current work, stable prenucleated PbS quantum dots (QDs) with a sub-nanometer (0.8 nm) size have been successfully synthesized via a systematically designed experiment. A detailed analysis of critical nucleation, growth, and stability for such ultrasmall prenucleated clusters is done. The experimental strategy is based on controlled concentration, temperature and injection of respective precursors, thus enabling us to control nucleation rate and separation of stable sub-nanometer PbS QDs with size 0.8 nm. Significantly, by providing additional thermal energy to sub-nanometer PbS QDs, we achieved the fully nucleated cubic crystalline structure of PbS with size of around 1.5 nm. The size and composition of the prenucleated QDs are investigated by sophisticated tools like X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS) spectroscopy which confirms the synthesis of PbS with Pb2+ rich surface while the UV-Vis spectroscopy and X-ray diffraction (XRD) data suggests an alternative crystallization path. Non-classical nucleation theory is employed to substantiate the growth mechanism of prenucleated PbS QDs.

On the Mechanism of Ultra Thin Silicon Oxide Film Growth During Thermal Oxidation

1993 ◽  
Vol 318 ◽  
Author(s):  
E.P. Gusev ◽  
H.C. Lu ◽  
T. Gustafsson ◽  
E. Garfunkel
Keyword(s):  
Thermal Oxidation ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxide ◽  
Film Growth ◽  
Oxide Films ◽  
Growth Conditions ◽  
Ion Scattering ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Medium Energy Ion Scattering

ABSTRACTThe growth of ultra-thin oxide films by the thermal oxidation of silicon has been studied by low and medium energy ion scattering spectroscopies (LEIS and MEIS) and X-ray photoelectron spectroscopy (XPS). To help elucidate the diffusional and mechanistic aspects of oxide growth we have used sequential isotope oxidation (18O2 followed by 16O2). LEIS demonstrates that both 18O and 16O atoms are on the silicon surface under our growth conditions. MEIS also distinguishes 18O from 16O and gives a depth distribution for both with high accuracy. Our results show that several key aspects of the Deal-Grove model (oxygen diffusion to the Si-SiO2 interface and oxide formation at the interface) are consistent with our results for 50Å films. For very thin oxide films (15Å or less), we found a mixed isotopic distribution in the film, demonstrating more complex oxidation behavior.

Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering

2011 ◽  
Vol 209 (2) ◽  
pp. 262-265 ◽  
Author(s):  
D. Jalabert ◽  
D. Pelloux-Gervais ◽  
A. Béché ◽  
J. M. Hartmann ◽  
P. Gergaud ◽  
...  
Keyword(s):  
Silicon Film ◽  
Medium Energy ◽  
Ion Scattering ◽  
Strain Profile ◽  
Thin Silicon ◽  
Medium Energy Ion Scattering ◽  
Thin Silicon Film

Structure Determination of the Nisi2(111) Surface Using Medium Energy Ion Scattering with Monolayer Resolution

1990 ◽  
Vol 202 ◽  
Author(s):  
J. Vrijmoeth ◽  
P.M. Zagwijn ◽  
J.W.M. Frenken ◽  
J.F. van der Veen
Keyword(s):  
Surface Structure ◽  
Structure Determination ◽  
New Method ◽  
Medium Energy ◽  
Ion Scattering ◽  
Triple Layer ◽  
Medium Energy Ion Scattering

ABSTRACTThe surface structure of epitaxial NiSi2 films grown on Si (111) has been determined using a new method. The backscattering signals from subsequent Ni layers in the NiSi2 (111) surface are resolved.The topology of the NiSi2 (111) surface is concluded to be bulklike, i.e., it is terminated by a Si – Ni – Si triple layer.

Depth-profiling the composition of bimetallic nanoparticles using medium energy ion scattering

2011 ◽  
Vol 605 (1-2) ◽  
pp. 220-224 ◽  
Author(s):  
Johan Gustafson ◽  
Andrew R. Haire ◽  
Christopher J. Baddeley
Keyword(s):  
Bimetallic Nanoparticles ◽  
Depth Profiling ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering

Surface structure of sphalerite studied by medium energy ion scattering and XPS

2007 ◽  
Vol 601 (2) ◽  
pp. 352-361 ◽  
Author(s):  
S.L. Harmer ◽  
L.V. Goncharova ◽  
R. Kolarova ◽  
W.N. Lennard ◽  
M.A. Muñoz-Márquez ◽  
...  
Keyword(s):  
Surface Structure ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering
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