The development of biaxial alignment in yttria-stabilized zirconia films fabricated by ion beam assisted deposition

1996 ◽  
Vol 25 (1) ◽  
pp. 35-42 ◽  
Author(s):  
Kevin G. Ressler ◽  
Neville Sonnenberg ◽  
Michael J. Cima
1997 ◽  
Vol 12 (11) ◽  
pp. 2913-2923 ◽  
Author(s):  
Y. Iijima ◽  
M. Hosaka ◽  
N. Tanabe ◽  
N. Sadakata ◽  
T. Saitoh ◽  
...  

Biaxially aligned YBa2Cu3O7−x (YBCO) films were fabricated on random Ni-based alloy tapes with yttrium stabilized-zirconia (YSZ) buffer layers deposited by ion-beam-assisted deposition (IBAD). Ar+ ion bombardment was found to have two significant effects on the crystalline structure of the YSZ buffer layers: to align a [100] axis with the substrate normal and a [111] axis with the bombarding beam axis. The resulting YSZ films were biaxially aligned on the random polycrystalline tapes, and the azimuthal distribution of the a- and b-axes of YBCO films on the top of the YSZ films was restricted to 10° FWHM. A critical current density (Jc) of 1.13 × 106 A/cm2 (77 K, 0 T) was obtained, and 1.1 × 105 A/cm2 was maintained at 5 T (77 K, B⊥c). The existence of both intrinsic and extrinsic pinning properties was clearly observed in the angular dependence of Jc with B⊥I. The longitudinal field effect on Jc was clearly observed, which indicated straight transport currents. This is evidence for strongly coupled current paths that demonstrate the bulk pinning properties of YBCO.


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