Investigation of Damage Induced by Low Energy Focused Ion Beam Irradiation in GaAs

1993 ◽  
Vol 316 ◽  
Author(s):  
Toshihiko Kosugi ◽  
Yoshihiko Yuba ◽  
Kenji Gamo
Keyword(s):  
Focused Ion Beam ◽  
Deep Level ◽  
Ion Beam ◽  
High Energy ◽  
Low Energy ◽  
Defect Migration ◽  
Defect Centers ◽  
Energy Irradiation ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTDefects induced by Ga focused ion beam (FIB) irradiation at an energy between 0.1 and IkeV have been characterized by means of deep level transient spectroscopy (DLTS) and related capacitance measurements. Seven different kinds of defect centers were resolved and two centers at 0.33 and O.56eV below the conduction band were dominant in the 100eV Ga implanted sample at doses up to 1015/cm2. Induced defect centers were observed to distribute over the region far beyond the theoretical ion range, which resulted from defect migration during the irradiation. Low energy irradiation induced defects were readily annealed out during low temperature heat treatment in contrast to those induced by high energy irradiations.

Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique

1989 ◽  
Vol 158 ◽  
Author(s):  
Zheng Xu ◽  
Toshihiko Kosugi ◽  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Low Energy ◽  
Deposition Technique ◽  
Film Properties ◽  
Ion Beam Assisted Deposition ◽  
Current Voltage ◽  
Residual Damage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTW films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring X-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 1O−5 ohm·cm were formed. It was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed.

Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 365-368 ◽  
Author(s):  
Giovanni Alfieri ◽  
Edouard V. Monakhov ◽  
Margareta K. Linnarsson ◽  
Bengt Gunnar Svensson
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
High Energy ◽  
Conduction Band Edge ◽  
Energy Band Gap ◽  
Annealing Step ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Thermal Stability Of

Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (Ec) have been detected.

Radiation-Resistant Properties of Inp-Related Materials

1994 ◽  
Vol 373 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Koshi Ando ◽  
Hidehiko Kamada
Keyword(s):  
Gamma Rays ◽  
Minority Carrier ◽  
Deep Level ◽  
High Energy ◽  
Carrier Injection ◽  
High Energy Electrons ◽  
Radiation Resistant ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

AbstractIrradiation effects of high-energy electrons and protons, and 60Co gamma-rays on InP-related materials have been examined in comparison with those of GaAs and Si. Superior radiation-resistance of InP-related materials and their devices compared to GaAs and Si has been found by using deep-level transient spectroscopy (DLTS), photoluminescence (PL) and properties of devices such as solar cells and lightemitting devices. Moreover, minority-carrier injection enhanced annealing phenomena of radiation-induced defects in InP-related materials have also been observed even at low temperature of around 150K.

Atomic Hydrogen Passivation of High Energy Hydrogen Implants

1991 ◽  
Vol 223 ◽  
Author(s):  
K. Srikanth ◽  
J. Shenal ◽  
S. Ashok
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
High Energy ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Hydrogen Passivation ◽  
Ion Proton ◽  
Proton Implantation ◽  
Defects And Impurities ◽  
Transient Spectroscopy

ABSTRACTHigh-energy hydrogen ion (proton) implantation is used in Si for creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy (<0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence for self-passivation of defects produced by H.

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

2010 ◽  
Vol 645-648 ◽  
pp. 423-426 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Svetlana Beljakowa ◽  
Bernd Zippelius ◽  
Gerhard Pensl ◽  
Katsunori Danno ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Systematic Study ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
High Energy ◽  
Defect Centers ◽  
High Energy Electrons ◽  
Transient Spectroscopy ◽  
P Type ◽  
Thermal Stability Of

This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient spectroscopy (DLTS); the defects are generated by irradiation with high-energy electrons of 170 keV or 1 MeV.

Deep level transient spectroscopy on focused ion beam written in‐plane capacitances

1993 ◽  
Vol 74 (10) ◽  
pp. 6088-6093
Author(s):  
T. Bever ◽  
G. Pfeiffer ◽  
T. Prescha ◽  
D. I. Bohne ◽  
J. Weber ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Focused Ion Beam ◽  
Deep Level ◽  
Ion Beam ◽  
Transient Spectroscopy

Rapid Thermal Process-Induced Defects : Gettering of Internal Contaminants

1989 ◽  
Vol 163 ◽  
Author(s):  
Bouchaib Hartiti ◽  
Wolfgang Eichhammer ◽  
Jean-Claude Muller ◽  
Paul Siffert
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Thermal Process ◽  
Deep Level ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Rapid Thermal Process ◽  
Slow Cooling ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Hydrogen Ion Implantation

AbstractWe show in this study that RTP-induced defects analysed by Deep Level Transient Spectroscopy (DLTS) are related to residual impurities present in as-grown silicon wafers. For one particular material an activation of a specific residual metallic impurity was observed in the temperature range 800 - 1000°C. This impurity can be returned to an electrically inactive precipitated form by classical thermal annealing (CTA) with a slow cooling rate or neutralized by means of low-energy hydrogen ion implantation.

Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers

2010 ◽  
Vol 645-648 ◽  
pp. 427-430 ◽  
Author(s):  
Svetlana Beljakowa ◽  
Sergey A. Reshanov ◽  
Bernd Zippelius ◽  
Michael Krieger ◽  
Gerhard Pensl ◽  
...  
Keyword(s):  
Deep Level ◽  
High Energy ◽  
Annealed Sample ◽  
Double Peak ◽  
Double Peak Structure ◽  
Peak Structure ◽  
Defect Centers ◽  
High Energy Electrons ◽  
Transient Spectroscopy ◽  
Dlts Spectra

Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped He+-profile. Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) were employed to search for defect centers. AS spectra of as-grown as well as of electron-irradiated (170 keV or 1 MeV) 4H-SiC epilayers reveal the Al acceptor (ΔE(Al) = 200 meV) and an unknown defect (ΔE(SB) = 177 meV), while AS spectra of the He+-implanted and annealed sample show in addition to the Al-acceptor two energetically deeper acceptor-like defect centers (ΔE(RE3) = 255 meV and ΔE(KR3) = 375 meV). The KR3-center is not directly formed by the He+-implantation, it requires an annealing process. The DLTS spectra of the He+-implanted and annealed sample resolve a double-peak structure of the KR3-defect (ΔE(KR3A) = 380 meV and ΔE(KR3B) = 410 meV).

Point Defects Migration and Agglomeration in Si at Room Temperature: The Role of Surface and Impurity Content

1997 ◽  
Vol 469 ◽  
Author(s):  
V. Privitera ◽  
S. Coffa ◽  
K. Kyllesbech Larsen ◽  
S. Libertino ◽  
G. Mannino ◽  
...  
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Deep Level ◽  
Ion Beam ◽  
Impurity Content ◽  
Sample Surface ◽  
Defect Migration ◽  
Transient Spectroscopy ◽  
Dopant Atoms

ABSTRACTOur recent work on the room temperature migration and trapping phenomena of self-interstitials and vacancies in crystalline Si is reviewed. Spreading resistance profiling and deep level transient spectroscopy measurements were used to monitor the interaction of ion beam generated defects with dopant atoms, intrinsic impurities (i.e. O and C), pre-existing defect marker layers and sample surface. We have found that both interstitials and vacancies undergo fast long range migration which is interrupted by trapping at impurities and by recombination at defects or at the surface. Effective defect migration lengths as large as 5 μm at room temperature have been observed in highly pure, defect free epitaxial Si samples. A lower limit of 1×10−10 cm2/sec for the room temperature diffusivity of self-interstitials has been determined. Furthermore, by monitoring the migration and interaction processes of point defects injected through a mask, we have established that surface acts as an effective sink for the migrating Si self interstitials.

Sign in / Sign up

Export Citation Format

Share Document