Mechanical Properties and Residual Stresses in Oxide/Metal Multilayer Films Synthesized by Ion Beam Assisted Deposition

1993 ◽  
Vol 308 ◽  
Author(s):  
C. E. Kalnas ◽  
L. J. Parfitt ◽  
M. G. Goldiner ◽  
G. S. Was ◽  
J. W. Jones
Keyword(s):  
Residual Stress ◽  
Critical Strain ◽  
Ion Beam ◽  
Crack Density ◽  
Multilayer Films ◽  
Compressive Stresses ◽  
Ion Beam Assisted Deposition ◽  
Small Grains ◽  
Ductile Substrates ◽  
Metal Layers

ABSTRACTFilms of Al, Al2O3 and Al/Al2O3 microlaminates were formed by ion beam assisted deposition (IBAD) at R ratios from 0.0025 to 0.5 and film thicknesses between 150 and 2600 nm. Oxide films were amorphous while metal layers were crystalline with small grains and texture for both PVD and IBAD conditions. The average stress in the oxide film is tensile at R=0 and becomes compressive, saturating at approximately 15 eV/atom. The residual stress in the Al films is tensile over all R ratios and the stress in the microlaminate roughly follows a rule of mixtures. Deformation of ductile substrates on which films had been deposited revealed that the critical strain to fracture was strongly dependent on residual stress. Large compressive stresses in monolithic films produced by ion beam assisted deposition delayed the onset of crack initiation while the presence of multiple layers, in general, lowered the crack density at saturation, suggesting a possible ductilizing effect.

Microstructure and Residual Stresses in Al2O3 Prepared by Ion Beam Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
M. G. Goldiner ◽  
G. S. Was ◽  
L. J. Parfitt ◽  
J. W. Jones
Keyword(s):  
Residual Stress ◽  
Ion Beam ◽  
Arrival Rate ◽  
Film Stress ◽  
Amorphous Phases ◽  
Alumina Films ◽  
Compressive Stresses ◽  
Ion Beam Assisted Deposition ◽  
Rapid Transition ◽  
Film Porosity

ABSTRACTAlumina films synthesized by ion beam assisted deposition (EBAD) were characterized in terms of their microstructure and residual stress. Normalized energy per deposited atom, En, ranged from 0 to 130 eV/atom. The microstructure of PVD films (En=0) is a mixture of crystalline (γ-Al2O3) and amorphous phases and IBAD films are amorphous. Density and stoichiometry vary between 2.6 and 3.1 g/cm3 and 1.3 and 1.6, respectively. Neither are dependent on either ion-to-atom arrival rate ratio, R, or En. The film porosity is in the form of small (4-6 nm) voids of density 1017 - 1018 cm-3. Bombarding gas is incorporated with 80% efficiency to levels of 4-5 at. %. A tensile residual stress of 0.3 GPa exists in PVD films. A rapid transition to high compressive stresses occurs with increased En, with a saturation of -0.4 GPa occurring at high En There is a strong correlation between gas incorporation and residual film stress. However, no existing models are capable of providing a quantitative explanation of the results.

Ion beam assisted deposition of metal layers using a novel one beam system

Vacuum ◽  
2003 ◽  
Vol 70 (2-3) ◽  
pp. 215-220 ◽  
Author(s):  
F.F. Komarov ◽  
A.A. Kamarou ◽  
P. Żukowski ◽  
Cz. Karwat ◽  
J. Sielanko ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Beam System ◽  
Metal Layers

Residual Stress Control by Ion Beam Assisted Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
G. S. Was ◽  
J. W. Jones ◽  
L. Parfitt ◽  
C.E. Kalnas ◽  
M. Goldiner
Keyword(s):  
Residual Stress ◽  
Functional Dependence ◽  
Ion Beam ◽  
Arrival Rate ◽  
Gas Content ◽  
Metallic Films ◽  
Amorphous Films ◽  
Tensile Direction ◽  
Ion Beam Assisted Deposition ◽  
Wide Range

AbstractThe origin of residual stresses were studied in both crystalline metallic films and amorphous oxide films made by ion beam assisted deposition (IBAD). Monolithic films of AI2O3 were deposited during bombardment by Ne, Ar or Kr over a narrow range of energies, E, and a wide range of ion-to-atom arrival rate ratios, R and were characterized in terms of composition, thickness, density, crystallinity, microstructure and residual stress. The stress was a strong function of ion beam parameters and gas content and compares to the behavior of other amorphous compounds such as MoSix and WS12.2 With increasing normalized energy (eV/atom), residual stress in crystalline metallic films (Mo, W) increases in the tensile direction before reversing and becoming compressive at high normalized energy. The origin of the stress is most likely due to densification or interstitial generation. Residual stress in amorphous films (Al2O3, MoSix and WSi2.2) is initially tensile and monotonically decreases into the compressive region with increasing normalized energy. The amorphous films also incorporate substantially more gas than crystalline films and in the case of Al2O3 are characterized by a high density of voids. Stress due to gas pressure in existing voids explains neither the functional dependence on gas content nor the magnitude of the observed stress. A more likely explanation for the behavior of stress is gas incorporation into the matrix, where the amount of incorporated gas is controlled by trapping.

Oxidation behavior of TiN/AlN multilayer films prepared by ion beam-assisted deposition

2001 ◽  
Vol 397 (1-2) ◽  
pp. 203-207 ◽  
Author(s):  
Do-Geun Kim ◽  
Tae-Yeon Seong ◽  
Young-Joon Baik
Keyword(s):  
Oxidation Behavior ◽  
Ion Beam ◽  
Multilayer Films ◽  
Ion Beam Assisted Deposition

Mechanical properties and residual stress in AlN films prepared by ion beam assisted deposition

2000 ◽  
Vol 18 (4) ◽  
pp. 1567-1570 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Nobuaki Kitazawa ◽  
Yoshikazu Nakamura ◽  
Chunliang Li ◽  
Tohru Sekino ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition

Mechanical Properties of AlN Thin Films Prepared by Ion Beam Assisted Deposition

2000 ◽  
Vol 647 ◽  
Author(s):  
Shuichi Miyabe ◽  
Toshiyuki Okawa ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Beam Energy ◽  
Ion Beam ◽  
High Energy ◽  
Columnar Structure ◽  
Ion Beam Assisted Deposition ◽  
Film Hardness ◽  
Nitrogen Ion

AbstractAluminum nitride (AlN) thin films were prepared by ion-beam assisted deposition method, and the influence of the nitrogen ion beam energy on their microstructure and mechanical properties was studied by changing the ion beam energy from 0.1 to 1.5 keV. Films prepared with a low-energy ion beam show a columnar structure, while films prepared with a high-energy ion beam show a granular structure. The film hardness is found to decrease with increasing nitrogen ion beam energy. It is also found that the film hardness does not change drastically after annealing in nitrogen atmosphere at 500 °C, yielding the residual stress relaxation. It is proposed that the film hardness is dependent on the film microstructure, which can be controlled with the nitrogen ion beam energy, rather than the residual stress in the films.

Mechanical properties and residual stress in AlN/Al mixed films prepared by ion-beam-assisted deposition

1999 ◽  
Vol 17 (2) ◽  
pp. 603-607 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Shingo Uchiyama ◽  
Yoshikazu Nakamura ◽  
Chunlang Li ◽  
Tohru Sekino ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Mixed Films
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