Effect of N+2 ion bombardment on the compositional change and residual stress of AlN film synthesized by ion beam assisted deposition

1995 ◽  
Vol 13 (6) ◽  
pp. 2814-2818 ◽  
Author(s):  
Ig‐Hyeon Kim ◽  
Seon‐Hyo Kim
Keyword(s):  
Residual Stress ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Compositional Change ◽  
Ion Beam Assisted Deposition ◽  
Aln Film

Mechanical Properties and Residual Stresses in Oxide/Metal Multilayer Films Synthesized by Ion Beam Assisted Deposition

1993 ◽  
Vol 308 ◽  
Author(s):  
C. E. Kalnas ◽  
L. J. Parfitt ◽  
M. G. Goldiner ◽  
G. S. Was ◽  
J. W. Jones
Keyword(s):  
Residual Stress ◽  
Critical Strain ◽  
Ion Beam ◽  
Crack Density ◽  
Multilayer Films ◽  
Compressive Stresses ◽  
Ion Beam Assisted Deposition ◽  
Small Grains ◽  
Ductile Substrates ◽  
Metal Layers

ABSTRACTFilms of Al, Al2O3 and Al/Al2O3 microlaminates were formed by ion beam assisted deposition (IBAD) at R ratios from 0.0025 to 0.5 and film thicknesses between 150 and 2600 nm. Oxide films were amorphous while metal layers were crystalline with small grains and texture for both PVD and IBAD conditions. The average stress in the oxide film is tensile at R=0 and becomes compressive, saturating at approximately 15 eV/atom. The residual stress in the Al films is tensile over all R ratios and the stress in the microlaminate roughly follows a rule of mixtures. Deformation of ductile substrates on which films had been deposited revealed that the critical strain to fracture was strongly dependent on residual stress. Large compressive stresses in monolithic films produced by ion beam assisted deposition delayed the onset of crack initiation while the presence of multiple layers, in general, lowered the crack density at saturation, suggesting a possible ductilizing effect.

Microstructural observation of a composite film of c-BN and h-BN phases

2000 ◽  
Vol 15 (11) ◽  
pp. 2292-2295 ◽  
Author(s):  
Young-Joon Park ◽  
Young-Joon Baik ◽  
Jae Hyoung Choi ◽  
Jeong Yong Lee ◽  
Jun-Hee Hahn
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Composite Film ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Deposition Process ◽  
Microstructural Observation ◽  
Ion Beam Assisted Deposition

BN films consisting of c-BN and h-BN phases were synthesized using an ion-beam-assisted deposition process. In contrast to conventional observations, the c-BN and h-BN phases did not form separate layers, but were distributed in the form of nano-sized grains throughout the film thickness. No distinctly aligned h-BN layer was observed before the c-BN phase. Such a mixed character of the film was attributed to a localized ion bombardment effect instead of the macro-stress. Possibly because of the presence of scattered h-BN phases, the thin film described here possessed a low hardness of about 20 GPa and a low stress of about 5 GPa, compared with other reported c-BN-containing films.

scholarly journals Tribomechanical Properties of a Carbon-Based Nanolayer Prepared by Nitrogen Ion Beam Assisted Deposition for Finger Joint Replacements

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Tomas Horazdovsky ◽  
Radka Vrbova
Keyword(s):  
Ion Beam ◽  
Titanium Substrate ◽  
Surface Hardness ◽  
Ion Bombardment ◽  
Ti6al4v Alloy ◽  
Wear Testing ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion ◽  
Ion Assistance ◽  
Carbon Based

This paper presents the tribomechanical test results of Ti6Al4V alloy modified by carbon-based nanolayers with a thickness of 20 nm and 40 nm, prepared by nitrogen ion beam assisted deposition. The presence of carbon and nitrogen compounds was observed in the modified surface after ion bombardment. Nonstoichiometric TiNx was mainly detected near the interface nanolayer/titanium substrate and in the substrate itself. Ion bombardment led to an improved surface hardness of ~13 GPa in comparison to unmodified Ti6Al4V titanium alloy (~5.5 GPa) and alloy coated by carbon nanolayer without nitrogen ion assistance (~7 GPa). The decreasing of friction coefficient was achieved from 0.5–0.6 for untreated Ti6Al4V alloy to 0.1 for treated Ti6Al4V alloy. Wear testing using a joint wear simulator proved that the modified Ti6Al4V alloy has a higher resistance compared to the unmodified Ti6Al4V alloy. The primary local wear fault of the treated surface was observed after 240,000 cycles in comparison to enormous wear on the untreated surface after just 10,000 cycles. Treating the Ti6Al4V load-bearing components of implants with carbon-based nanolayers assisted by nitrogen ions is very promising in terms of extending the lifetime of implants and thereby reduces patient burden.

Residual Stress Control by Ion Beam Assisted Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
G. S. Was ◽  
J. W. Jones ◽  
L. Parfitt ◽  
C.E. Kalnas ◽  
M. Goldiner
Keyword(s):  
Residual Stress ◽  
Functional Dependence ◽  
Ion Beam ◽  
Arrival Rate ◽  
Gas Content ◽  
Metallic Films ◽  
Amorphous Films ◽  
Tensile Direction ◽  
Ion Beam Assisted Deposition ◽  
Wide Range

AbstractThe origin of residual stresses were studied in both crystalline metallic films and amorphous oxide films made by ion beam assisted deposition (IBAD). Monolithic films of AI2O3 were deposited during bombardment by Ne, Ar or Kr over a narrow range of energies, E, and a wide range of ion-to-atom arrival rate ratios, R and were characterized in terms of composition, thickness, density, crystallinity, microstructure and residual stress. The stress was a strong function of ion beam parameters and gas content and compares to the behavior of other amorphous compounds such as MoSix and WS12.2 With increasing normalized energy (eV/atom), residual stress in crystalline metallic films (Mo, W) increases in the tensile direction before reversing and becoming compressive at high normalized energy. The origin of the stress is most likely due to densification or interstitial generation. Residual stress in amorphous films (Al2O3, MoSix and WSi2.2) is initially tensile and monotonically decreases into the compressive region with increasing normalized energy. The amorphous films also incorporate substantially more gas than crystalline films and in the case of Al2O3 are characterized by a high density of voids. Stress due to gas pressure in existing voids explains neither the functional dependence on gas content nor the magnitude of the observed stress. A more likely explanation for the behavior of stress is gas incorporation into the matrix, where the amount of incorporated gas is controlled by trapping.

Effects of Substrate Materials on Nanoindentation Tests of AlN Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Shuichi Miyabe ◽  
Masami Aono ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Penetration Depth ◽  
Ion Beam ◽  
Fused Silica ◽  
Indentation Hardness ◽  
Ion Beam Assisted Deposition ◽  
Film Hardness ◽  
Aln Film ◽  
Different Thickness

ABSTRACTAluminum nitride (AlN) thin films with different thickness were synthesized by ion-beam assisted deposition on various substrates, Corning 7059 glass, fused silica, Si single crystal, and sapphire, which show the hardness ranging from 7 to 37 GPa. Effects of substrate materials on indentation-hardness of AlN films were studied by using a nanoindentation system equipped with a diamond Berkovich indenter. The maximum force applied to the films was kept at 3 mN. For the films on the Corning 7059 glass substrate, when the normalized penetration depth to the film thickness is 0.98, the film hardness is found to be about 7 GPa, which is close to the hardness of the substrate. While the normalized penetration depth is reduced to 0.11, the film hardness becomes to be about 16 GPa. On the other hand, for the films on the sapphire substrate, when the normalized penetration depth is 0.83, the film hardness is observed to be about 25 GPa, while the normalized penetration depth is reduced to 0.10, the film hardness is found to be about 15 GPa. These results reveal that when the normalized penetration depth to the film thickness is about 0.1, the hardness of the AlN film can be evaluated to be about 15 GPa without being affected by substrate materials.

Ion-Beam-Assisted Deposition of Metal Nanocluster thin Films with Nonlinear Optical Properties

1995 ◽  
Vol 396 ◽  
Author(s):  
C. M. Cotell ◽  
C.A. Carosella ◽  
S.R. Flom ◽  
S. Schiestel ◽  
N. Haralampus ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Uv Spectroscopy ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Plan View ◽  
Ion Beam Assisted Deposition ◽  
Metal Nanocluster ◽  
Post Deposition

AbstractMetal nanocluster thin films (∼200 nm thickness) consisting of noble metal (Au) clusters (5-30 nm) in an active metal oxide (Nb2O5) matrix were deposited by evaporation or ion beam assisted deposition (IBAD). In some cases the films were given a post-deposition anneal. The microstructure of the films was examined by plan view and cross sectional transmission electron microscopy (TEM). The size of the metal nanoclusters was found to depend upon the temperature of the post-deposition anneal as well as the conditions of ion bombardment. Ion bombardment was found to stabilize smaller size particles. The linear optical properties of the films, as measured by VIS/UV spectroscopy, show particle size-dependent surface plasmon resonance effects. The nonlinear optical (NLO) properties of the nanoclusters in oxidized niobium were probed experimentally using degenerate four wave mixing (DFWM) and nonlinear transmission (NLT). The DFWM measurements yielded signals that showed strong evidence of saturation and give large values of χ(3)xxxxl. NLT measurements demonstrated that the nonlinear absorption coefficient and, hence, Imχ(3)xxxx was negative. Time resolved DFWM measurements exhibited dynamics that decayed on a several picosecond time scale. The magnitude and the picosecond dynamics of the NLO response were compared to those observed in gold nanoclusters formed by ion implantation in other media. The advantages of the IBAD method for fabricating third order NLO films include the ability to deposit films of arbitrary active region thicknesses and, more importantly, high cluster densities.

Mechanical properties and residual stress in AlN films prepared by ion beam assisted deposition

2000 ◽  
Vol 18 (4) ◽  
pp. 1567-1570 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Nobuaki Kitazawa ◽  
Yoshikazu Nakamura ◽  
Chunliang Li ◽  
Tohru Sekino ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition

Microstructure and Residual Stresses in Al2O3 Prepared by Ion Beam Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
M. G. Goldiner ◽  
G. S. Was ◽  
L. J. Parfitt ◽  
J. W. Jones
Keyword(s):  
Residual Stress ◽  
Ion Beam ◽  
Arrival Rate ◽  
Film Stress ◽  
Amorphous Phases ◽  
Alumina Films ◽  
Compressive Stresses ◽  
Ion Beam Assisted Deposition ◽  
Rapid Transition ◽  
Film Porosity

ABSTRACTAlumina films synthesized by ion beam assisted deposition (EBAD) were characterized in terms of their microstructure and residual stress. Normalized energy per deposited atom, En, ranged from 0 to 130 eV/atom. The microstructure of PVD films (En=0) is a mixture of crystalline (γ-Al2O3) and amorphous phases and IBAD films are amorphous. Density and stoichiometry vary between 2.6 and 3.1 g/cm3 and 1.3 and 1.6, respectively. Neither are dependent on either ion-to-atom arrival rate ratio, R, or En. The film porosity is in the form of small (4-6 nm) voids of density 1017 - 1018 cm-3. Bombarding gas is incorporated with 80% efficiency to levels of 4-5 at. %. A tensile residual stress of 0.3 GPa exists in PVD films. A rapid transition to high compressive stresses occurs with increased En, with a saturation of -0.4 GPa occurring at high En There is a strong correlation between gas incorporation and residual film stress. However, no existing models are capable of providing a quantitative explanation of the results.

Mechanical Properties of AlN Thin Films Prepared by Ion Beam Assisted Deposition

2000 ◽  
Vol 647 ◽  
Author(s):  
Shuichi Miyabe ◽  
Toshiyuki Okawa ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Beam Energy ◽  
Ion Beam ◽  
High Energy ◽  
Columnar Structure ◽  
Ion Beam Assisted Deposition ◽  
Film Hardness ◽  
Nitrogen Ion

AbstractAluminum nitride (AlN) thin films were prepared by ion-beam assisted deposition method, and the influence of the nitrogen ion beam energy on their microstructure and mechanical properties was studied by changing the ion beam energy from 0.1 to 1.5 keV. Films prepared with a low-energy ion beam show a columnar structure, while films prepared with a high-energy ion beam show a granular structure. The film hardness is found to decrease with increasing nitrogen ion beam energy. It is also found that the film hardness does not change drastically after annealing in nitrogen atmosphere at 500 °C, yielding the residual stress relaxation. It is proposed that the film hardness is dependent on the film microstructure, which can be controlled with the nitrogen ion beam energy, rather than the residual stress in the films.

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